Preparation method of branched zinc oxide nanowire array film

A technology of zinc oxide nanowires and array films, which is applied in the field of nanomaterials, can solve the problems of low photoelectric conversion efficiency and small specific surface area, and achieve the effects of improving photoelectric conversion efficiency, increasing specific surface area, and simple preparation methods

Inactive Publication Date: 2012-06-20
NANJING UNIV
View PDF3 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] It has been found that one-dimensional nanostructure array films such as nanowires (rods) arranged in an orderly manner have regular and ordered electrical channels, which c...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of branched zinc oxide nanowire array film
  • Preparation method of branched zinc oxide nanowire array film
  • Preparation method of branched zinc oxide nanowire array film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] Embodiment 1: stainless steel wire mesh is cleaned with acetone, ethanol, deionized water, puts in autoclave, and reaction solution consists of: water (40ml); Zinc nitrate (0.05mol / L); Polyethyleneimine (0.003mol / L), hexamethylenetetramine (0.05mol / L), ammonia water (0.40mol / L). Heated to 90°C, reacted for 6 hours, cooled naturally to room temperature, took out the conductive substrate, and placed it in another autoclave for vulcanization treatment. The composition of the reaction solution was: water (20ml); thiourea (0.05mol / L). Heating to 120°C, reacting for 1 hour, naturally cooling to room temperature, taking out the conductive substrate, and heating and calcining the vulcanized conductive substrate at 200°C for 5 hours; after calcining, put it into the autoclave again, and the reaction solution consists of water (40ml); Zinc acetate (0.025mol / L); polyethyleneimine (0.008mol / L), hexamethylenetetramine (0.025mol / L), ammonia water (0.4mol / L). Heating to 90° C., reac...

Embodiment 2

[0014] Embodiment 2: plated indium tin oxide transparent conductive film glass with acetone, ethanol, deionized water cleans, puts in the autoclave, and reaction solution consists of: water (80ml); Zinc chloride (0.1mol / L); Ethyleneimine (0.005mol / L), hexamethylenetetramine (0.1mol / L), ammonia water (1.0mol / L). Heated to 120°C, reacted for 3 hours, cooled naturally to room temperature, took out the conductive substrate, and put it into another autoclave. The reaction solution consisted of: water (40ml); Na 2 S (0.05mol / L). Heating to 90°C, reacting for 3 hours, naturally cooling to room temperature, taking out the conductive substrate, and heating and calcining the vulcanized conductive substrate at 400°C for 4 hours; after calcining, put it into the autoclave again, and the composition of the reaction solution is: water (40ml); Zinc nitrate (0.025mol / L); polyethyleneimine (0.01mol / L), hexamethylenetetramine (0.025mol / L), ammonia water (0.40mol / L). Heating to 88° C., reactin...

Embodiment 3

[0015] Embodiment 3: Plating indium tin oxide transparent conductive film glass is cleaned with acetone, ethanol, deionized water, puts in the autoclave, and reaction solution consists of: water (1000ml); Zinc nitrate (0.02mol / L); Polyethylene Imine (0.003mol / L), hexamethylenetetramine (0.1mol / L), ammonia water (4.0mol / L). Heated to 100°C, reacted for 12 hours, cooled naturally to room temperature, took out the conductive substrate, and placed it in another autoclave. The composition of the reaction solution was: water (20ml); thioacetamide (0.02mol / L). Heating to 120°C, reacting for 2 hours, naturally cooling to room temperature, taking out the conductive substrate, heating and calcining the vulcanized conductive substrate at 500°C for 2 hours; after calcining, put it into the autoclave again, and the composition of the reaction solution is: water (100ml); Zinc sulfate (0.025mol / L); polyethyleneimine (0.005mol / L), hexamethylenetetramine (0.025mol / L), ammonia water (0.20mol / L)...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method of a branched zinc oxide nanowire array film. The preparation method comprises the following steps of: cleaning a conductive substrate with acetone, ethanol and deionized water for later use, and preparing a zinc oxide nanowire array on the surface of the cleaned conductive substrate through a hydro-thermal reaction: cleaning the conductive substrate, and putting into a reaction solution in a reaction kettle; dissolving the reaction solution which consists of a zinc salt, polyethyleneimine, hexamethylene tetramine and ammonia water into a certain amount of water, putting into a high-pressure kettle, heating to 50-200 DEG C, reacting for 1-24 hours, and naturally cooling to the room temperature; and vulcanizing and calcining a growing zinc oxide nanowire (rod) array, and performing secondary hydro-thermal treatment to obtain a branched zinc oxide nanowire (rod) array film. Due to the generation of a branched structure, the specific surface area of a zinc oxide nanowire (rod) can be increased effectively. The zinc oxide nanowire array film prepared with the method can be applied in various fields of dye-sensitized solar cells, photoluminescence, electron field emission and the like. The preparation method is simple and convenient and has a high performance price ratio.

Description

technical field [0001] The invention relates to the fields of nanometer material, new energy and photoelectric technology. Background technique [0002] The study of large-area, high-density arrays of 1D semiconductor nanostructures has attracted widespread interest due to their potential applications in future optoelectronic devices. Among many semiconductor materials, zinc oxide (ZnO), as an n-type semiconductor (3.2eV), has a large exciton binding energy (60meV), high mechanical and thermal stability, and is attractive for applications in high-efficiency short-wave optoelectronic devices. received widespread attention. On the other hand, ZnO nanowire (rod) arrays also have important applications in piezoelectric generators, dye-sensitized solar cells, photonic crystals, and superhydrophobic interfaces. [0003] It has been found that one-dimensional nanostructure array films such as nanowires (rods) arranged in an orderly manner have regular and ordered electrical chann...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C03C17/34C01G9/02B81C1/00
Inventor 周勇代辉邹志刚
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap