One mode of the present invention provides an
etching method that, even when an
etching liquid is re-used, can suppress rate variability between the
etching rate when the etching liquid is used for the first time and the
etching rate when the etching liquid is re-used. In one mode, the present disclosure pertains to an etching method comprising a step for etching an etching target layer containing a group-6 element
metal, by using an etching liquid containing
phosphoric acid,
nitric acid, and the following component A. If the etching liquid contains a group-6 element
metal, the etching method comprises a step for adding the following component A to the etching liquid before performing the etching. Component A: At least one compound selected from compounds having a repeating unit derived from
ethyleneimine, compounds having a repeating unit derived from
allylamine, and compounds having a repeating unit derived from diallylamine.