This invention discloses a method for improving the
interfacial bonding strength of an ultra-smooth
semiconductor shielding layer. The method involves
grafting and modifying the surface of conductive
carbon black with an acid ester, then dividing it into two portions. The two portions of modified conductive
carbon black are separately mixed with EVA resin and
polyimide, and then separately vulcanized in a flat vulcanizing
machine. The vulcanized materials are then added to a Banbury mixer along with vinylpyrrolidone, NN'-
ethylene bis-stearamide, polyethyleneimine, and
sodium polyacrylate for compounding. The compounded material is immediately impregnated with
peroxide and then rapidly fed into an extruder. After
extrusion, it is vulcanized again to obtain an ultra-smooth
semiconductor shielding layer with improved
interfacial bonding strength. This invention modifies the surface of conductive
carbon black, strengthening the interaction between the macromolecular chains and the carbon black. Batch mixing with different esters enhances its internal
anisotropy, forming attractive clusters, reducing the dispersion of conductive carbon black within the shielding layer, decreasing the number of branches, reducing repulsion, and ultimately strengthening the
interfacial bonding strength, resulting in a better overall shielding layer.