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Preparation method of zinc-oxide nanorod array film

A technology of zinc oxide nanorods and nanorod arrays, which is applied in the field of preparation of zinc oxide nanorod array thin films, and can solve the problems of not being able to meet the performance requirements of ZnO nanorod array thin film devices, failing to obtain high crystallization quality, and poor crystallization quality , to achieve the effect of improving photoluminescence performance, excellent photoelectric performance, and improving crystal quality

Inactive Publication Date: 2013-11-20
UNIV OF JINAN
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In the applicant's previous patent (a method for controlling the orientation and morphology of zinc oxide nanorods and nanotube arrays, CN200810016893.3), a A method for preparing ZnO nanorods / nanotubes in a liquid phase method, but the hydrothermal reaction temperature is lower than 100 °C, and the growth is 2-12 hours to obtain a vertically grown ZnO nanorod array film, and the length of the ZnO nanorods does not exceed 10 μm, and the crystal quality is poor, so that its photoluminescence performance has an obvious defect emission peak in the range of 500-700nm, and the intrinsic emission peak is relatively weak, which cannot meet the performance requirements of ZnO nanorod array thin film devices

Method used

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  • Preparation method of zinc-oxide nanorod array film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] (1) Preparation of seed layer precursor solution: Dissolve equimolar amounts of zinc acetate and ethanolamine 0.3 M in sequence in ethanol, stir well, seal and homogenize for more than 4 h;

[0059] (2) Cleaning of the deposited substrate: The ITO conductive glass was ultrasonically cleaned with a 1:1:1 solution of ethanol:isopropanol:acetone for 30 min, then ultrasonically cleaned with deionized water for 10 min and dried.

[0060] (3) Spin coating ZnO precursor solution: transfer the deposition substrate to a homogenizer, add the precursor solution prepared in step (1) dropwise, and spin at 6000 rpm for 30 s after uniform dispersion.

[0061] (4) Evaporation of solvent: Transfer the spin-coated substrate to a hot plate, and evaporate the solvent or pyrolyze it at 180-300°C for more than 5 min.

[0062] (5) Crystallization of the ZnO seed layer thin film: Transfer to a rapid annealing furnace, 300-800 ℃ rapid heat treatment for 30-60min, to obtain a solid ZnO seed laye...

Embodiment 2

[0069] The preparation method and test are the same as in Example 1, but the programmed heating process is changed, as Figure 7 Schematic diagram of step heating. Figure 8 is in equimolar amount of Zn(NO 3 ) 2 ·6H 2 O and hexamethylenetetramine at a concentration of 0.15 mol L -1 , add 60 mmol·L -1 Polyethylenimine growth solution, using Figure 7 According to the step heating process, the FESEM image of the cross-section of the obtained ZnO nanorod array film was grown under the condition of 80-150 ℃ step heating for 16 h. The ZnO nanorods prepared by this method have a diameter of 50-150 nm and a length of about 50 μm. It shows that the length of ZnO nanorods will decrease if the temperature rises too fast.

[0070] The photoluminescent performance of the ZnO nanorods obtained by this method is the same as that of the ZnO nanorods array thin film obtained by step heating in Example 1, which has good high intrinsic emission.

Embodiment 3

[0072] Preparation method and test are identical with embodiment 1, but the concentration of growth solution is 3 times of embodiment 1, the Zn(NO 3 ) 2 ·6H 2 O and hexamethylenetetramine at a concentration of 0.15 mol L -1 , add 60 mmol·L -1 Polyethyleneimine as epitaxial growth regulator of ZnO nanorods. Figure 9 The FESEM diagram of the cross-section of the ZnO array film prepared by this method shows that the diameter of the ZnO nanorods is 100-250 nm and the length is about 150 μm, indicating that increasing the concentration is beneficial to the increase of the length of the ZnO nanorods, but the diameter of the ZnO nanorods also increases .

[0073] The photoluminescent performance of the ZnO nanorods obtained by this method is the same as that of the ZnO nanorods array thin film obtained by step heating in Example 1, which has good high intrinsic emission.

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Abstract

The invention belongs to the technical field of semiconductor film preparation, and particularly relates to a preparation method of a zinc-oxide nanorod array film. The technical scheme adopted by the invention is as follows: the preparation method comprises the following steps of: (1) on the basis of adopting height (001)-oriented ZnO as a seed layer, putting the ZnO seed layer into an aqueous solution of zinc nitrate (Zn(NO3)2), polyethyleneimine (PEI) and hexamethylenetetramine (HMT) for epitaxial growth to obtain a (001) preferred-orientation ultralong ZnO nanorod array film; (2) carrying out fast annealing treatment on the film, and improving the photoluminescence performance of the ZnO array film. The technology has the advantages that the continuous growth of the ZnO nanorod at the temperature higher than 100 DEG C can be realized; due to the high-temperature growth condition, the crystallization quality of the nanorod is improved, the internal defects are obviously reduced; the zinc-oxide nanorod array film has excellent photoelectric performance, and is more conductive to being applied in photoelectric devices such as dye-sensitized solar batteries, ultraviolet detectors, field-effect transistors, light-emitting diodes and nanogenerators.

Description

technical field [0001] The invention belongs to the technical field of semiconductor film preparation, and in particular relates to a preparation method of a zinc oxide nanorod array film. Background technique [0002] ZnO is a semiconductor material with a wide bandgap (3.37 eV) and has good photoelectric, piezoelectric, and catalytic properties. In recent years, with the development of nanotechnology, scientists have discovered that the one-dimensional ZnO array structure has good development prospects in the fields of sensors, light-emitting diodes, solar cells, and nanogenerators. Zinc oxide is one of the research hotspots at home and abroad. [0003] As a wide bandgap transparent semiconductor material, ZnO has an exciton binding energy as high as 60 meV and has excellent exciton recombination luminescence performance, which is suitable for the development of ultraviolet lasers. [0004] In the applicant's previous patent (a method for controlling the orientation and ...

Claims

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Application Information

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IPC IPC(8): C30B29/16C30B19/00C30B29/62C30B33/02
Inventor 武卫兵刘宽菲张楠楠陈晓东陈宝龙
Owner UNIV OF JINAN
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