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Method for preparing strontium ruthenate film with highly (001) preferred orientation at low temperature

A technology of preferred orientation and thin film, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the difficult problems of semiconductor integration process compatibility, etc., and achieve the effect of low resistivity and low crystallization temperature

Active Publication Date: 2015-03-18
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, no matter what kind of substrate is used, the deposition temperature of SRO film is higher than 650°C, which is difficult to be compatible with traditional semiconductor integration process

Method used

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  • Method for preparing strontium ruthenate film with highly (001) preferred orientation at low temperature
  • Method for preparing strontium ruthenate film with highly (001) preferred orientation at low temperature
  • Method for preparing strontium ruthenate film with highly (001) preferred orientation at low temperature

Examples

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preparation example Construction

[0022] B. LaNiO 3 Preparation of (LNO) target: LaNiO 3 (LNO) targets can be prepared by referring to existing methods in the prior art, for example: using La 2 o 3 and Ni 2 o 3 The powder is mixed according to the atomic ratio of La and Ni of 0.45:0.55, synthesized at a high temperature of 1000-1150°C, ground and pressed into a block, and then sintered at a high temperature of 1100-1300°C for 2 to 4 hours to make an LNO target.

[0023] C. LaNiO 3 (LNO) buffer layer preparation.

[0024] Firstly, the silicon substrate cleaned by the conventional method is put into the sputtering apparatus, and the vacuum is evacuated to 10 -4 Below Pa; then heat the silicon substrate to keep it at 300-450°C; then feed oxygen and argon as the sputtering gas, the partial pressure of oxygen is 15-25%, and the total pressure of the sputtering gas Keep it at 2.5~3.5Pa, using LaNiO 3 The target material was deposited LNO thin film by DC sputtering, the sputtering power was 80W, and the sputt...

Embodiment 1

[0034] 1) SrRuO 3 (SRO) target preparation: SrCO with a purity of 99.0% 3 and Ru content greater than 75% RuO x The powder is mixed and ground at an atomic ratio of Sr and Ru of 1:1, pressed into a block, and then sintered at a high temperature of 1500°C for 12 hours to make an SRO target;

[0035] 2) LaNiO 3 (LNO) target preparation: using La 2 o 3 and Ni 2 o 3 The powder is mixed according to the atomic ratio of La and Ni of 0.45:0.55, synthesized at 1100°C, ground and pressed into a block, and then sintered at 1200°C for 2 hours to make a LNO target; 3) LaNiO 3 Preparation of (LNO) buffer layer

[0036] The silicon substrate was cleaned in sequence by absolute ethanol and distilled water, then placed in the sputtering apparatus, and vacuumed to 10 -4 Pa; then heat the silicon substrate to keep it at 350°C; then pass in oxygen and argon, the oxygen partial pressure is 20%, and the pressure is kept at 3.0Pa, using LaNiO 3 (LNO) target is deposited LNO film by DC sput...

Embodiment 2

[0040] The procedure of Example 1 was repeated, but in step 4), the temperature of the substrate was raised to 400°C. see figure 2 , the SRO thin film has a high (001) preferred orientation, and its surface resistivity is 718μΩ·cm.

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Abstract

The invention relates to a method for preparing a strontium ruthenate film with highly (001) preferred orientation at a low temperature. A silicon chip is used as a substrate; and after a LaNiO3 buffer layer is introduced, a SrRuO3 target is sputtered at 400-600 DEG C to obtain the SrRuO3 with highly (001) preferred orientation.

Description

technical field [0001] The invention relates to the preparation of a conductive oxide strontium ruthenate thin film, in particular to a method for preparing the strontium ruthenate thin film with a height (001) preferred orientation for ferroelectric memory electrodes at low temperature. Background technique [0002] Ferroelectric thin films have been extensively studied due to a series of important functional properties, and the selection of electrode materials plays a very important role in their function. Due to the structural mismatch between the metal electrode and the ferroelectric film, it is difficult to grow an epitaxial ferroelectric film on the electrode, and the metal electrode has the disadvantages of easy oxidation, poor adhesion, and serious interdiffusion with the film, so people pay attention Transfer to conductive oxide materials that have a similar structure to ferroelectric thin films and have good chemical and thermal stability. As a conductive oxide, S...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35
CPCC23C14/088C23C14/35
Inventor 董显林李涛王根水陈莹
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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