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Lead zirconate titanate/ruthenium acid strontium ferroelectric superlattice material and preparation method thereof

A technology of lead zirconate titanate and superlattice, which is applied in the direction of piezoelectric/electrostrictive/magnetostrictive devices, circuits, electrical components, etc., can solve the problems of restricting the selection of other functional properties of superlattice materials, and achieve excellent Dielectric and ferroelectric properties, broad application prospects, simple preparation process

Active Publication Date: 2016-10-26
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this can reduce the leakage current of superlattice materials, it also limits people's choice of parent materials for superlattice materials and the development of other functional properties of superlattice materials

Method used

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  • Lead zirconate titanate/ruthenium acid strontium ferroelectric superlattice material and preparation method thereof
  • Lead zirconate titanate/ruthenium acid strontium ferroelectric superlattice material and preparation method thereof
  • Lead zirconate titanate/ruthenium acid strontium ferroelectric superlattice material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0037] (PZT-12 / SRO-2) / SRO / STO Ferroelectric Superlattice Materials

[0038] (1) SrTiO 3 (001) The substrate was cleaned by microwave ultrasonic in acetone and alcohol for 20 minutes, then the substrate was heated to 750° C. in vacuum, and annealed for 60 minutes;

[0039] (2) Using the pulsed laser deposition method under the conditions of a deposition temperature of 750 ° C and an oxygen pressure of 5 Pa, on SrTiO 3 (001) deposition thickness on the substrate is a strontium ruthenate layer of 14nm;

[0040] (3) Under the condition that the deposition temperature is lowered to 650°C and the oxygen pressure is maintained at 5Pa, the lead zirconate titanate target is bombarded with a laser, and a lead zirconate titanate layer with a thickness of 12 units is deposited on the strontium ruthenate layer. Then, the target is converted to strontium ruthenate, and the strontium ruthenate target is bombarded with laser light to deposit a strontium ruthenate layer with a thickness of 2...

Embodiment 2

[0045] (PZT-12 / SRO-1) / SRO / STO Ferroelectric Superlattice Materials

[0046] 1) SrTiO 3 (001) The substrate was cleaned by microwave ultrasonic in acetone and alcohol for 20 minutes, then the substrate was heated to 750° C. in vacuum, and annealed for 60 minutes;

[0047] (2) Using the pulsed laser deposition method under the conditions of a deposition temperature of 750 ° C and an oxygen pressure of 5 Pa, on SrTiO 3 (001) deposition thickness on the substrate is a strontium ruthenate layer of 20nm;

[0048] (3) Under the condition that the deposition temperature is lowered to 650°C and the oxygen pressure is maintained at 5Pa, the lead zirconate titanate target is bombarded with a laser, and a lead zirconate titanate layer with a thickness of 12 units is deposited on the strontium ruthenate layer. Then, the target is converted to strontium ruthenate, and the strontium ruthenate target is bombarded with a laser to deposit a strontium ruthenate layer with a thickness of 1 unit...

Embodiment 3

[0053] (PZT-12 / SRO-3) / SRO / STO Ferroelectric Superlattice Materials

[0054] (1) SrTiO 3 (001) The substrate was cleaned by microwave ultrasonic in acetone and alcohol for 20 minutes, then the substrate was heated to 750° C. in vacuum, and annealed for 60 minutes;

[0055] (2) Using the pulsed laser deposition method under the conditions of a deposition temperature of 750 ° C and an oxygen pressure of 5 Pa, on SrTiO 3 (001) deposition thickness on the substrate is a strontium ruthenate layer of 14nm;

[0056] (3) Under the condition that the deposition temperature is lowered to 650°C and the oxygen pressure is maintained at 5Pa, the lead zirconate titanate target is bombarded with laser light, and a lead zirconate titanate layer with a thickness of 12 units is deposited on the strontium ruthenate layer. Then, the target is converted to strontium ruthenate, and the strontium ruthenate target is bombarded with a laser to deposit a strontium ruthenate layer with a thickness of 3...

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Abstract

The objective of the invention is to provide lead zirconate titanate / ruthenium acid strontium ferroelectric superlattice material and a preparation method thereof. The material is formed by periodically grown ferroelectric material lead zirconate titanate and metallically conductive oxide material ruthenium acid strontium. The advantages of the lead zirconate titanate / ruthenium acid strontium ferroelectric superlattice material are that the dielectric constant is increased for 2-10 times than that of a pure PZT film; and the material has great ferroelectric polarization performance, and its saturated polarization value is higher than that of the pure PZT film and can be 80muC / cm2. The preparation method of the material is that ruthenium acid strontium and lead zirconate titanate are alternately grown on a monocrystal substrate by using a pulse laser deposition method, and the periodic thickness of the superlattice is accurately regulated and controlled by controlling bombardment time of laser for different target material. The ferroelectric superlattice material has wide application prospect in sensors, storage devices and other integrated ferroelectric devices.

Description

technical field [0001] The invention belongs to the fields of data storage materials, functional materials and intelligent materials, and in particular relates to a lead zirconate titanate / strontium ruthenate ferroelectric superlattice material and a preparation method thereof. Background technique [0002] Ferroelectric thin films have excellent properties such as ferroelectricity, piezoelectricity, photoelectricity and dielectricity, and have broad application prospects in the field of ferroelectric integrated microelectronics such as memory devices, crystal field effect transistors, and surface acoustic wave devices. However, as the thickness of the ferroelectric film decreases, the electrical properties of the film will gradually weaken, which limits the application of the ferroelectric film in microelectronic devices. [0003] It has been found that ferroelectric materials can be grown alternately with other oxide materials to prepare ferroelectric superlattice material...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/187H10N30/853
CPCH10N30/853H10N30/8554
Inventor 王占杰何斌
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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