Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing strontium ruthenate target

A technology of strontium ruthenate and preparation steps, which is applied in the field of strontium ruthenate target preparation, can solve the problems of SRO target not being densely formed, easily warped, deformed, cracked, etc., and achieves weak crystallinity, high activity, and small crystal grains Effect

Active Publication Date: 2014-04-02
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reported method will also lead to the formation of SRO target is not dense, but also because of the absence of pressure, the SRO target is easy to be warped, deformed, or even broken.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] SrCO 3 , RuO 2 Prepare SrRuO at a molar ratio of 1:1 3 Proportional mixing, grinding and mixing evenly and tableting. After tableting, the raw materials were pre-calcined at 750°C for 8 hours, and after the reaction was completed, they were taken out and ground to powder. 3 Add the binder PVA at a mass ratio of 4% and grind again until uniformly mixed. Press the mixed powder into a pre-set disc with a diameter of 75 mm and a thickness of 6 mm. Put the pre-pressed sheet into a hot pressing die set with a diameter of 100 mm, and fill it with zircon sand. Transfer the hot pressing mold cover to a hot pressing furnace, raise the temperature to 500°C and keep it warm for 3 hours; then raise the temperature to 950°C and keep it warm for 5 hours; after the heat preservation is over, the temperature rises to 1350°C, and at the same time during the heating process, press the sheet every 40 minutes The material is gradually pressurized to 12MPa and finally increased to 120MP...

Embodiment 2

[0015] SrCO 3 , RuO 2 Prepare SrRuO with a molar ratio of 1.02:1 3 Proportional mixing, grinding and mixing evenly and tableting. The chip was pre-fired at 850°C for 6 hours, and after the reaction was completed, it was taken out and ground to a powder, and pressed by SrRuO 3 Add the binder MC at a ratio of 3% by mass and grind again until uniformly mixed. Press the mixed powder into a preset disc with a diameter of 25 mm and a thickness of 4 mm. Put the pre-pressed sheet into a hot pressing die set with a diameter of 50 mm, and fill it with alumina powder. Transfer the hot-pressing mold cover to the hot-pressing furnace, raise the temperature to 550°C and keep it warm for 3 hours; then raise the temperature to 900°C and keep it warm for 10 hours; The material is gradually pressurized to 20MPa and finally increased to 200MPa, and then kept under pressure for 20h. After the completion, take out the SRO sheet and remove the alumina powder on the surface to obtain the SRO c...

Embodiment 3

[0017] SrCO 3 , Ru, and SrRuO in a molar ratio of 1:1 3 Proportional mixing, grinding and mixing evenly and tableting. The chip was pre-fired at 850°C for 10 hours, and after the reaction was completed, it was taken out and ground to a powder, and pressed by SrRuO 3 Add the binder HPMC at a ratio of 4% by mass and grind again until uniformly mixed. Press the mixed powder into a preset square tablet with a side length of 100 mm and a thickness of 15 mm. Put the pressed pre-set sheet into a hot-pressing mold sleeve with a side length of 150 mm, and fill it with zircon sand. Transfer the hot pressing mold sleeve to the hot pressing furnace, raise the temperature to 550°C and keep it warm for 5 hours; then raise the temperature to 1000°C and keep it warm for 12 hours; The material is gradually pressurized to 10MPa and finally increased to 100MPa, and then kept under pressure for 24h. After the completion, the SRO sheet is taken out, and the zircon sand on the surface is remov...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing a strontium ruthenate target. A high-density SRO (SrRuO3) ceramic target is prepared by a low-temperature presintering and high-temperature pressure sintering two-step method, and has the density which is 86 to 88 percent of theoretical density. The SRO ceramic target prepared by the method can be applied to processes such as sputtering, molecular beam epitaxy, pulsed laser deposition and the like to form an SRO film, and has the characteristics that: 1) a low temperature and short time are adopted in the process of pressing and presintering a raw material, so that the prepared precursor has low crystallinity, high activity and a small particle size; and 2) a preset sheet is directly heated and pressurized at the same position to be subjected to high-temperature hot pressed sintering after glue is discharged and stress is released, so that a dense and well formed target is obtained.

Description

technical field [0001] The invention relates to a strontium ruthenate target (SrRuO 3 , abbreviated as SRO), more precisely, the present invention relates to a method for preparing a high-density SRO ceramic target using a two-step method of low-temperature pre-firing-high-temperature pressure sintering. Background technique [0002] SrO 3 (SRO) is a transition metal oxide with a three-dimensional, orthogonally distorted perovskite structure, and the only oxide with magnetic order among 4d elements; it has metallic conductivity and a room temperature resistivity of about 280 μΩ cm. Often referred to as "bad metal". [0003] SRO with high chemical stability and thermal stability has high electrical conductivity, has a similar crystal structure and good lattice matching with ferroelectric materials widely studied at present, such as PZT, so SRO has a wide range of application values. For example, it is used as the buffer layer of high-temperature superconducting thin films,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01G55/00C04B35/01C04B35/645C23C14/08C23C14/34
Inventor 黄富强刘战强
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products