Preparation method of flexible BNT (Bi(4-x)NdxTi3O12) ferroelectric-thin-film

A ferroelectric thin film, flexible technology, applied in the field of preparation of flexible BNT ferroelectric thin film, can solve the problems of poor fatigue performance of perovskite structure ferroelectric materials, poor thermal stability of the substrate, etc., to achieve solution concentration optimization and excellent ferroelectric performance Effect

Active Publication Date: 2018-04-13
XIANGTAN UNIV
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Problems solved by technology

[0005] The purpose of the present invention is to overcome the disadvantages of poor thermal stability of the substrate and poor fatigue performance of perovskite structure ferroelectric

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  • Preparation method of flexible BNT (Bi(4-x)NdxTi3O12) ferroelectric-thin-film
  • Preparation method of flexible BNT (Bi(4-x)NdxTi3O12) ferroelectric-thin-film
  • Preparation method of flexible BNT (Bi(4-x)NdxTi3O12) ferroelectric-thin-film

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Embodiment Construction

[0034] The technical solution of the present invention will be described in further detail below in conjunction with specific embodiments of the accompanying drawings.

[0035] A kind of method for preparing flexible BNT ferroelectric film by sol-gel method, is characterized in that, comprises the following steps:

[0036] 1.1 Preparation of single crystal muscovite sheet and preparation of bottom electrode: Select a smooth, crack-free, and impurity-free muscovite sheet, then paste the mica sheet on the operating table, and tear it off layer by layer with pointed tweezers until the single crystal flexible mica sheet The thickness is less than 50 μm; then a layer of cobalt ferrite CoFe is prepared on the upper single crystal flexible mica sheet by laser pulse deposition method 2 o 4 (hereinafter referred to as CFO) as a seed layer, and then a layer of SRO consistent with the ferroelectric material structure is grown on CFO, wherein the thickness of CFO is 10nm, and the thickne...

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Abstract

The invention discloses a preparation method of a flexible BNT (Bi(4-x)NdxTi3O12) ferroelectric-thin-film. The method includes the following steps: 1) using a laser pulse deposition method to preparea strontium ruthenate bottom electrode on a muscovite-mica substrate; 2) adopting a sol-gel method to prepare a precursor solution of the BNT ferroelectric-thin-film, wherein concentration of the precursor solution is 0.05-0.1mol/L; 3) adopting a spin coating method to carry out spin coating of the BNT precursor solution on the above-mentioned strontium ruthenate bottom electrode to obtain a uniform wet film; 4) drying, pyrolyzing and annealing the above-mentioned uniform wet film obtained by preparation; and (5) repeating the step 3)-the step 4) for 4-6 times to obtain the flexible BNT ferroelectric-thin-film, wherein thickness of the thin film is in a range of 200nm-300nm.The method provides a flexible BNT ferroelectric-thin-film material of simple technology and excellent ferroelectricperformance.

Description

technical field [0001] The invention belongs to the technical field of ferroelectric thin film and device preparation, and in particular relates to a method for preparing a flexible BNT ferroelectric thin film. Background technique [0002] Ferroelectric thin film materials are two-dimensional materials that have spontaneous polarization at a certain temperature, and the direction of spontaneous polarization can be reversed due to the reversal of the direction of the external electric field. Ferroelectric thin films have important properties such as ferroelectricity, dielectricity, and piezoelectricity, and can be used to make important new components such as ferroelectric memories, dielectric phase shifters, and voltage-controlled filters. Because of its small size, low working voltage, and easy development of small devices, it has broad application prospects in high-tech fields such as microelectronics, micromechanics, and microelectromechanics. The ferroelectric memory p...

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Application Information

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IPC IPC(8): G11C11/14G11C11/22H01L43/08
CPCG11C11/14G11C11/22H10N50/10
Inventor 蒋丽梅涂楠英姜杰周益春
Owner XIANGTAN UNIV
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