A kind of preparation method of flexible epitaxial ferroelectric thin film

Abstract

The invention discloses a method for preparing a flexible epitaxial ferroelectric thin film, which is characterized in that it comprises the following steps: 1) preparing a perovskite structure oxide strontium ruthenate bottom electrode by a laser pulse deposition method; 2) using a sol-gel method Preparing a precursor solution for a ferroelectric thin film, wherein the concentration of the precursor solution is 0.1 to 0.5 mol / L, and the ferroelectric thin film material is selected from any one of lead zirconate titanate, barium titanate or bismuth ferrite; 3) The preparation of the flexible epitaxial ferroelectric thin film is to spin-coat the precursor solution on the above-mentioned strontium ruthenate bottom electrode by spin-coating method to obtain a uniform wet film; 4) dry, pyrolyze and anneal the uniform wet film prepared above; 5) Repeat steps 3)-4) 3 to 8 times to obtain the target flexible epitaxial ferroelectric film, and the thickness of the film is 100 nm to 300 nm. The invention provides a method for preparing a flexible epitaxial thin film with simple process and excellent ferroelectric performance.

Description

technical field [0001] The invention relates to the technical field of ferroelectric thin film and device preparation, in particular to a method for preparing a flexible epitaxial ferroelectric thin film. Background technique [0002] With the rapid progress and development of society, people's demand for electronic products is getting higher and higher, and flexible devices have a wide range of applications in information, medical, energy and national defense due to their unique bending characteristics and easy portability. Application prospect. In recent years, flexible electronic devices have represented a direction of the development of a new generation of semiconductors, and have attracted extensive attention from scholars at home and abroad. Many electronics manufacturers such as Samsung, Sony, Hewlett-Packard and Nokia have shown increasing interest, and have successively developed a series of e-readers, mobile phones, TVs and other consumer electronics products with...

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Problems solved by technology

The commonly used flexible ferroelectric thin film substrates are: 1 polyethylene terephthalate (PET), which is widely used because of its light transmission, flexibility and low price, but because it does not have high temperature resistance Disadvantages, so it is not suitable for growing traditional ferroelectric materials that require high temperature preparation. Therefore, this kind of substrate is limited to growing organic ferroelectric materials

2 Ultra-thin flexible glass, because of its advantages such as super light transmission, smooth surface, bendability and high temperature resistance (650°C), has been selected as a common substrate for preparing high-temperature ferroelectric materials, but ultra-thin glass has low Tensile strength (33MPa) and expensive price hinder its wide application

The commonly used preparation method of PZT is the sol-gel method, but the PZT film prepared by sol-gel generally requires a crystallization temperature above 600 ° C. Due to the high growth temperature of ferroelectric materials, the currently commonly used flexible semi-crystalline thermoplastic polymer ( hereinafter referred to as PET) and other substrates can not withstand, can not grow epitaxial flexible ferroelectric thin film and other problems are hindering the development of flexible ferroelectric memory

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