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Ir-doped SrRuO3 doped material, preparation method and application

A doping material, strontium ruthenate technology, applied in the field of magnetic storage, can solve the problems of small storage capacity and easy data loss

Inactive Publication Date: 2019-06-21
NANJING UNIV OF POSTS & TELECOMM +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problems existing in the prior art, the present invention discloses an iridium-doped strontium ruthenate doped material and its application, which can replace the ferromagnetic layer and the antiferromagnetic layer in the traditional spin valve structure with two or more different types. The material composition solves the problems of small storage capacity and easy data loss in traditional storage technology. At the same time, it can be used as a material for the preparation of smart switches to solve the situation that the switch cannot be touched under certain special circumstances.

Method used

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  • Ir-doped SrRuO3 doped material, preparation method and application
  • Ir-doped SrRuO3 doped material, preparation method and application
  • Ir-doped SrRuO3 doped material, preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] SrCO 3 , RuO 2 and Ir powder prepared by 1g SrRu 0.7 Ir 0.3 o 3 Ratio of sample 0.56g : 0.22g : 0.345g weighed, then mixed in an agate mortar and ground for 1 hour until evenly mixed, because Ru is volatile under high temperature conditions, the excess is 5% based on the original ratio.

[0037] Step 2: Sinter the uniformly mixed sample in a low-temperature furnace. The temperature is controlled as follows: increase to 1000°C at a rate of 5°C / min and keep for 24 hours, then cool down to 400°C at a rate of 6°C / min, then cool down naturally to room temperature.

[0038] Step 3: Take out the sample treated in step 2, put it into an agate mortar and grind it again for 60 minutes.

[0039] Step 4: Put the reground sample into a high-temperature furnace for sintering. The temperature is controlled as follows: the temperature is raised to 1200°C at a rate of 5°C / min and then kept for 24 hours, and then cooled to 400°C at a rate of 6°C / min. Cool to room temperature.

[...

Embodiment 2

[0042] SrCO 3 , RuO 2 and Ir powder prepared by 1g SrRu 0.7 Ir 0.3 o 3 Ratio of sample 0.56g : 0.22g : 0.35g weighed, then placed in an agate mortar and mixed and ground for 1 hour to mix evenly, because Ru is volatile under high temperature conditions, an excess of 5% based on the original ratio.

[0043] Step 2: Sinter the uniformly mixed sample in a low-temperature furnace. The temperature is controlled as follows: increase to 1000°C at a rate of 5°C / min and keep for 24 hours, then cool down to 400°C at a rate of 6°C / min, then cool down naturally to room temperature.

[0044] Step 3: Take out the sample treated in step 2, put it into an agate mortar and grind it again for 60 minutes.

[0045] Step 4: Put the reground sample into a high-temperature furnace for sintering. The temperature is controlled as follows: the temperature is raised to 1200°C at a rate of 5°C / min and then kept for 24 hours, and then cooled to 400°C at a rate of 6°C / min. Cool to room temperature. ...

Embodiment 3

[0048] SrCO 3 , RuO 2 and Ir powder prepared by 1g SrRu 0.7 Ir 0.3 o 3 Ratio of sample 0.56g : 0.22g : 0.355g Weigh, then put in an agate mortar and mix and grind for 1h until the mix is ​​uniform, because Ru is volatile under high temperature conditions, the excess is 5% based on the original ratio.

[0049] Step 2: Sinter the uniformly mixed sample in a low-temperature furnace. The temperature is controlled as follows: increase to 1000°C at a rate of 5°C / min and keep for 24 hours, then cool down to 400°C at a rate of 6°C / min, then cool down naturally to room temperature.

[0050] Step 3: Take out the sample treated in step 2, put it into an agate mortar and grind it again for 60 minutes.

[0051] Step 4: Put the reground sample into a high-temperature furnace for sintering. The temperature is controlled as follows: the temperature is raised to 1200°C at a rate of 5°C / min and then kept for 24 hours, and then cooled to 400°C at a rate of 6°C / min. Cool to room temperatur...

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Abstract

The invention discloses an Ir-doped SrRuO3 doped material, a preparation method and an application. The Ir-doped SrRuO3 doped material is an oxide containing metallic elements Sr, Ru and Ir, the chemical formula is SrRu0.7Ir0.3O3, the material has an antiferromagnetic area and a ferromagnetic area, Sr and Ru are main elements, Ir is a doping element and partially replaces the position of Ru for doping, Ir doping content is 30%, and the material has an exchange bias effect when the temperature is 10 K. According to the Ir-doped SrRuO3 doped material, the preparation method and the application,the Ir-doped SrRuO3 doped material can replace an existing spin valve with a multilayered structure to be applied to the field of magnetic storage, and the Ir-doped SrRuO3 doped material can realize metal-insulation phase change by controlling temperature change and is applied to the field of preparation of a circuit switch.

Description

technical field [0001] The invention belongs to the field of magnetic storage, and in particular relates to an iridium-doped strontium ruthenate doped material, a preparation method and an application. Background technique [0002] Strontium ruthenate (SrRuO 3 , abbreviated as SRO) is a transition metal oxide with a three-dimensional, orthogonally distorted perovskite structure, and it is also the only oxide with magnetic order among 4d elements. Due to its good chemical stability and structural matching with other perovskite materials, SRO is widely used as an electrode material for oxide heterojunctions. As a magnetic oxide, SRO's magnetic properties change significantly with temperature, showing paramagnetism at room temperature and ferromagnetism when the temperature is lower than 160K. SRO belongs to the strongly correlated electronic system, and there is an interconnection of charge, spin, orbit, and lattice. This system has complex ground states and rich physical pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G55/00H01L43/08H01L43/10H10N50/10
Inventor 解其云卢浩勇祁超吴敏刘云
Owner NANJING UNIV OF POSTS & TELECOMM
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