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A strontium ruthenate/lanthanum strontium manganese oxide transition metal oxide heterojunction and preparation method thereof

A technology of lanthanum strontium manganese oxide and transition metal, which is applied in the data storage field of functional oxide thin film materials, can solve the problems of uncontrollable size and direction of exchange bias, achieve precise controllable size and direction of exchange bias, and has application prospects Broad, ductile effect

Active Publication Date: 2020-12-29
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] One of the purposes of the present invention is to provide a strontium ruthenate / lanthanum strontium manganese oxygen transition metal oxide heterojunction to solve the uncontrollable problems of the size and direction of the exchange bias in existing materials

Method used

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  • A strontium ruthenate/lanthanum strontium manganese oxide transition metal oxide heterojunction and preparation method thereof
  • A strontium ruthenate/lanthanum strontium manganese oxide transition metal oxide heterojunction and preparation method thereof
  • A strontium ruthenate/lanthanum strontium manganese oxide transition metal oxide heterojunction and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0046]The preparation steps of any SRO / LSMO-0 (SRO / LMO) transition metal oxide heterojunction thin film material are:

[0047](1) Prepare pure-phase SRO and LSMO-0 targets (that is, LMO targets) using the aforementioned solid-state sintering method, and place each target in the deposition chamber of the pulsed laser deposition equipment for standby;

[0048](2) SrTiO3(001) The single crystal substrate was ultrasonically cleaned in acetone and alcohol solution for 20 min each, and the SrTiO3(001) The single crystal substrate is heated to 750°C under vacuum and kept for 30 min;

[0049](3) Using pulsed laser deposition method under the conditions of substrate temperature and oxygen pressure of 750℃ and 40 Pa, respectively, adjust the distance between target and substrate to 4.5 cm, and use energy density to 1.5J / cm2The pulsed laser first bombards the SRO target, and the SrTiO3(001) A single-layer SRO film with a thickness of 15 nm is prepared on a single crystal substrate, and under the same c...

Embodiment 2

[0053]The preparation steps of any SRO / LSMO-0.1 transition metal oxide heterojunction thin film material according to the operating method of Example 1 are:

[0054](1) Prepare SRO and LSMO-0.1 targets by the aforementioned solid-state sintering method, and place each target in the deposition chamber of the pulsed laser deposition equipment for use;

[0055](2) SrTiO3(001) Single crystal substrates were ultrasonically cleaned in acetone and alcohol solution for 20 min each, SrTiO before deposition3(001) The single crystal substrate is heated to 750°C under vacuum and kept for 30 min;

[0056](3) Using pulsed laser deposition method under the conditions of substrate temperature and oxygen pressure of 750℃ and 40 Pa, respectively, adjust the distance between target and substrate to 4.5 cm, and use energy density to 1.5J / cm2The pulsed laser first bombards the SRO target, and the SrTiO3(001) A single-layer SRO film with a thickness of 15 nm is prepared on a single crystal substrate, and under th...

Embodiment 3

[0060]The preparation steps of any SRO / LSMO-0.2 transition metal oxide heterojunction thin film material according to the operating method of Example 1 are:

[0061](1) Prepare SRO and LSMO-0.2 targets using the aforementioned solid-state sintering method, and place each target in the deposition chamber of the pulsed laser deposition equipment for use;

[0062](2) SrTiO3(001) Single crystal substrates were ultrasonically cleaned in acetone and alcohol solution for 20 min each, SrTiO before deposition3(001) The single crystal substrate is heated to 750°C under vacuum and kept for 30 min;

[0063](3) Using pulsed laser deposition method under the conditions of substrate temperature and oxygen pressure of 750℃ and 40 Pa, respectively, adjust the distance between target and substrate to 4.5 cm, and use energy density to 1.5J / cm2The pulsed laser first bombards the SRO target, and the SrTiO3(001) A single-layer SRO film with a thickness of 15 nm is prepared on a single crystal substrate, and under...

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Abstract

The invention provides a strontium ruthenate / lanthanum strontium manganese transition metal oxide heterojunction and a preparation method thereof, wherein the thickness of the strontium ruthenate / lanthanum strontium manganese transition metal oxide heterojunction is 30-60 nm , which includes a strontium ruthenate film and a lanthanum strontium manganese oxide film, the molar ratio of each component in the lanthanum strontium manganese oxide film La:Sr:Mn:O=1-x:x:1:3, 0≤x≤1 ; The strontium ruthenate / lanthanum strontium manganese oxide transition metal oxide heterojunction is prepared by pulsed laser deposition. The preparation process of the strontium ruthenate / lanthanum strontium manganese oxide transition metal oxide heterojunction is simple and the production cost is low, and the strontium ruthenate / lanthanum strontium oxide can be accurately and effectively regulated by changing the doping content of Sr element in the lanthanum strontium manganese oxide thin film The lateral and vertical exchange bias directions and values ​​of manganese-oxygen transition metal oxide heterojunctions have broad application prospects.

Description

Technical field[0001]The invention relates to the technical field of data storage of functional oxide film materials, in particular to a strontium ruthenate / lanthanum strontium manganese oxide transition metal oxide heterojunction and a preparation method thereof.Background technique[0002]The exchange bias effect is a common phenomenon in ferromagnetic / antiferromagnetic heterojunctions where the ferromagnetic Curie temperature is greater than the antiferromagnetic Neel temperature, which was first discovered by Meiklefohn and Bean in 1956. This is due to the interface iron The asymmetric shift of the hysteresis loop caused by magnetic or antiferromagnetic pinning along the field cooling direction (or the reverse direction). Electron spinology devices mainly rely on the exchange bias effect of the ferromagnetic / antiferromagnetic layer in the heterojunction system. The exchange bias effect of transition metal oxides has broad application prospects in the fields of spin valve read head...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/28C23C14/08C23C14/58H01L43/08
CPCC23C14/08C23C14/28C23C14/5806H10N50/10
Inventor 陈明敬宁兴坤方立德孟庆刚王江龙王淑芳李小亭
Owner HEBEI UNIVERSITY
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