Preparation method of flexible epitaxial ferroelectric film
A ferroelectric thin film and flexible technology, applied in the field of the preparation of flexible epitaxial ferroelectric thin films, can solve the problems of low tensile strength, unsuitability, hindering wide application, etc., and achieve excellent ferroelectric properties and the effect of optimizing the preparation technology
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Embodiment 1
[0045] A method for preparing flexible epitaxial PZT ferroelectric thin films by sol-gel method, is characterized in that, comprises the following steps:
[0046] 1.1 Preparation of single crystal mica sheet and preparation of bottom electrode: choose a smooth and crack-free natural mica sheet, then stick the natural mica sheet on the operating table, and tear it off layer by layer with pointed tweezers until the single crystal flexible mica sheet The thickness is less than 50 μm (radius of curvature ≤ 2.5mm); then a layer of cobalt ferrite CoFe is prepared on the upper single crystal flexible mica sheet by laser pulse deposition method 2 o 4 (hereinafter referred to as CFO) as a buffer layer and a seed layer, and then a layer of SRO consistent with the structure of the ferroelectric material is grown on the CFO, wherein the thickness of the CFO is 5nm, and the thickness of the SRO is 30nm;
[0047] 1.2 Sol-gel method to prepare the precursor solution of PZT (ratio of substan...
Embodiment 2
[0053] A method for preparing flexible epitaxial BTO ferroelectric thin films by sol-gel method, is characterized in that, comprises the following steps:
[0054] 1.1 Preparation of single crystal mica sheet and preparation of bottom electrode: choose a smooth and crack-free natural mica sheet, then stick the natural mica sheet on the operating table, and tear it off layer by layer with pointed tweezers until the single crystal flexible mica sheet The thickness is less than 50 μm (radius of curvature ≤ 2.5mm); then a layer of cobalt ferrite CoFe is prepared on the upper single crystal flexible mica sheet by laser pulse deposition method 2 o 4 (hereinafter referred to as CFO) as a buffer layer and a seed layer, and then a layer of SRO consistent with the structure of the ferroelectric material is grown on the CFO, wherein the thickness of the CFO is 5nm, and the thickness of the SRO is 30nm;
[0055] 1.2 Sol-gel method to prepare BTO (mass ratio: Ba:Ti=1:1) precursor solution ...
Embodiment 3
[0061] Preparation of flexible epitaxial bismuth ferrite BiFeO by a sol-gel method 3 (hereinafter abbreviated as BFO) the method for ferroelectric thin film, it is characterized in that, comprises the following steps:
[0062] 1.1 Preparation of single crystal mica sheet and preparation of bottom electrode: choose a smooth and crack-free natural mica sheet, then stick the natural mica sheet on the operating table, and tear it off layer by layer with pointed tweezers until the single crystal flexible mica sheet The thickness is less than 50 μm (radius of curvature ≤ 2.5mm); then a layer of cobalt ferrite CoFe is prepared on the upper single crystal flexible mica sheet by laser pulse deposition method 2 o 4 (hereinafter referred to as CFO) as a buffer layer and a seed layer, and then a layer of SRO consistent with the structure of the ferroelectric material is grown on the CFO, wherein the thickness of the CFO is 5nm, and the thickness of the SRO is 30nm;
[0063] 1.2 Sol-gel ...
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