Preparation method of flexible epitaxial ferroelectric film

A ferroelectric thin film and flexible technology, applied in the field of the preparation of flexible epitaxial ferroelectric thin films, can solve the problems of low tensile strength, unsuitability, hindering wide application, etc., and achieve excellent ferroelectric properties and the effect of optimizing the preparation technology

Active Publication Date: 2017-10-17
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The commonly used flexible ferroelectric thin film substrates are: 1 polyethylene terephthalate (PET), which is widely used because of its light transmission, flexibility and low price, but because it does not have high temperature resistance Disadvantages, so it is not suitable for growing traditional ferroelectric materials that require high temperature preparation. Therefore, this kind of substrate is limited to growing organic ferroelectric materials
2 Ultra-thin flexible glass, because of its advantages such as super light transmission, smooth surface, bendability and high temperature resistance (650°C), has been selected as a common substrate for prepar

Method used

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  • Preparation method of flexible epitaxial ferroelectric film
  • Preparation method of flexible epitaxial ferroelectric film
  • Preparation method of flexible epitaxial ferroelectric film

Examples

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Effect test

Embodiment 1

[0045] A method for preparing flexible epitaxial PZT ferroelectric thin films by sol-gel method, is characterized in that, comprises the following steps:

[0046] 1.1 Preparation of single crystal mica sheet and preparation of bottom electrode: choose a smooth and crack-free natural mica sheet, then stick the natural mica sheet on the operating table, and tear it off layer by layer with pointed tweezers until the single crystal flexible mica sheet The thickness is less than 50 μm (radius of curvature ≤ 2.5mm); then a layer of cobalt ferrite CoFe is prepared on the upper single crystal flexible mica sheet by laser pulse deposition method 2 o 4 (hereinafter referred to as CFO) as a buffer layer and a seed layer, and then a layer of SRO consistent with the structure of the ferroelectric material is grown on the CFO, wherein the thickness of the CFO is 5nm, and the thickness of the SRO is 30nm;

[0047] 1.2 Sol-gel method to prepare the precursor solution of PZT (ratio of substan...

Embodiment 2

[0053] A method for preparing flexible epitaxial BTO ferroelectric thin films by sol-gel method, is characterized in that, comprises the following steps:

[0054] 1.1 Preparation of single crystal mica sheet and preparation of bottom electrode: choose a smooth and crack-free natural mica sheet, then stick the natural mica sheet on the operating table, and tear it off layer by layer with pointed tweezers until the single crystal flexible mica sheet The thickness is less than 50 μm (radius of curvature ≤ 2.5mm); then a layer of cobalt ferrite CoFe is prepared on the upper single crystal flexible mica sheet by laser pulse deposition method 2 o 4 (hereinafter referred to as CFO) as a buffer layer and a seed layer, and then a layer of SRO consistent with the structure of the ferroelectric material is grown on the CFO, wherein the thickness of the CFO is 5nm, and the thickness of the SRO is 30nm;

[0055] 1.2 Sol-gel method to prepare BTO (mass ratio: Ba:Ti=1:1) precursor solution ...

Embodiment 3

[0061] Preparation of flexible epitaxial bismuth ferrite BiFeO by a sol-gel method 3 (hereinafter abbreviated as BFO) the method for ferroelectric thin film, it is characterized in that, comprises the following steps:

[0062] 1.1 Preparation of single crystal mica sheet and preparation of bottom electrode: choose a smooth and crack-free natural mica sheet, then stick the natural mica sheet on the operating table, and tear it off layer by layer with pointed tweezers until the single crystal flexible mica sheet The thickness is less than 50 μm (radius of curvature ≤ 2.5mm); then a layer of cobalt ferrite CoFe is prepared on the upper single crystal flexible mica sheet by laser pulse deposition method 2 o 4 (hereinafter referred to as CFO) as a buffer layer and a seed layer, and then a layer of SRO consistent with the structure of the ferroelectric material is grown on the CFO, wherein the thickness of the CFO is 5nm, and the thickness of the SRO is 30nm;

[0063] 1.2 Sol-gel ...

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Abstract

The invention discloses a preparation method of a flexible epitaxial ferroelectric film. The preparation method is characterized by 1) preparing a perovskite structure oxide strontium ruthenate bottom electrode by a laser pulse deposition method; 2) preparing a precursor solution of the ferroelectric film by means of a sol-gel method, wherein the concentration of the precursor solution is 0.1-0.5mol/L, the ferroelectric film material is selected from any one of lead zirconate titanate, barium titanate or bismuth ferrite; 3) preparing the flexible epitaxial ferroelectric film, spin-coating the above-mentioned strontium ruthenate bottom electrode with the precursor solution by means of a spin coating method to obtain a uniform wet film; 4) drying, pyrolyzing and annealing the obtained uniform wet film; and (5) repeating steps 3) and 4) for 3-8 times to obtain the target flexible epitaxial ferroelectric film, and the thickness of the film is in the range of 100nm-300nm. The flexible epitaxial ferroelectric film is simple in technology and excellent in ferroelectric performance.

Description

technical field [0001] The invention relates to the technical field of ferroelectric thin film and device preparation, in particular to a method for preparing a flexible epitaxial ferroelectric thin film. Background technique [0002] With the rapid progress and development of society, people's demand for electronic products is getting higher and higher, and flexible devices have a wide range of applications in information, medical, energy and national defense due to their unique bending characteristics and easy portability. Application prospects. In recent years, flexible electronic devices have represented a direction of the development of a new generation of semiconductors, and have attracted extensive attention from scholars at home and abroad. Many electronics manufacturers such as Samsung, Sony, Hewlett-Packard and Nokia have shown increasing interest, and have successively developed a series of e-readers, mobile phones, TVs and other consumer electronics products wit...

Claims

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Application Information

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IPC IPC(8): H01L27/11502C23C28/04C23C14/28C23C14/08C23C18/12
CPCC23C14/08C23C14/28C23C18/1216C23C18/1254C23C28/04H10B53/00
Inventor 姜杰周益春彭强祥蒋丽梅涂楠英
Owner XIANGTAN UNIV
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