A gallium nitride mis-hemt passivation design and preparation method thereof

Abstract

The invention belongs to the technical field of semiconductor devices, and discloses a gallium nitride MIS-HEMT passivation design and a preparation method thereof, wherein the passivation structure includes twice stacked silicon-doped hafnium oxide HfSiO material and P-type CuO. Preferably, the MIS-HEMT device adopts a grooved gate structure; the gate dielectric adopts a high dielectric constant silicon-doped hafnium oxide material; the source and drain electrodes are prepared using a low-temperature gold-free contact process. The present invention improves the key composition and specific structure of the passivation structure, cooperates with the gate dielectric material of the GaN MIS-HEMT device, and utilizes two layers of high dielectric constant material (HfSiO) and low dielectric constant P-type oxide Comparing with the prior art, the present invention can realize better electrical performance by constructing the passivation structure by using CuO.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and more specifically, relates to a gallium nitride MIS-HEMT (ie, a high electron mobility transistor HEMT including a metal-insulator-semiconductor structure MIS; wherein, MIS means metal-insulator-semiconductor, HEMT stands for High Electron Mobility Transistor) passivation design and its preparation method, which can obtain gallium nitride MIS-HEMT devices with superior electrical properties. Background technique [0002] Since the advent of metal-oxide-semiconductor field-effect transistors, silicon materials have dominated the semiconductor industry. This is mainly due to the low cost of silicon semiconductors and the high-quality natural oxide layer on their surfaces. However, the narrow bandgap of silicon limits its development in the direction of power electronics, and it is inevitable to find semiconductor materials with better performance. Gallium nitride is a third-gener...

AI Technical Summary

Problems solved by technology

[0004] 1. Conventional gallium nitride electronic devices are depletion-type, and the device will be turned on under zero bias, resulting in potential safety hazards in power electronics applications

[0005] 2. The ohmic contact of gallium nitride devices introduces gold, and the annealing temperature is very high, which is incompatible with the existing CMOS process

[0006] 3. When the GaN device is switched from the off state to the on state, the saturation current decreases and the on-resistance increases, that is, the current collapse phenomenon, which greatly affects the reliability of the GaN device application.

[0007] 4. At present, GaN devices have achieved gratifying results compared with silicon devices in terms of withstand voltage, but there is still a lot of room for improvement from its own theoretical value.

Images