Ultra violet ray photo detector based on gallium nitride semiconductor

A photodetector and ultraviolet technology, which is applied in semiconductor devices, photometry, and electrical solid state devices, can solve problems such as excessive differences in lattice constants, affecting performance, and poor epitaxy structures.
CN1753191AActive Publication Date: 2006-03-29FORMOSA EPITAXY INCORPORATION +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
FORMOSA EPITAXY INCORPORATION
Publication Date
2006-03-29

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Abstract

The invention provides a GaN semiconductor-based ultraviolet (UV) detector structure, from the substrate up, in sequence comprising n-type contact layer, light absorbing layer, light transmitting layer and p-type contact layer, all made of AlGaInN tetra-compound semiconductor material. By changing Al, Ga and In compositions of the semiconductor material, on one hand, these semiconductor layers can possess the needed energy gap, thus able to be specially sensitive to the optical reaction with respect to specific-wavelength UV; on the other hand, these semiconductor layers can possess matching crystal lattice constants, thus able to avoid the related problem of overlarge stress and simultaneously obtaining a UV detector with higher-quality crystal lattice structure. And the structure further comprises anode on the p-type contact layer, light transmitting Ohm contact layer and anti-reflecting layer as well as cathode on the n-type contact layer.
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Description

technical field

[0001] The invention relates to an ultraviolet photodetector, in particular to an ultraviolet photodetector structure using gallium nitride compound semiconductor. Background technique

[0002] At present, there are three conventional methods for photodetectors (Photo Detectors) that can convert light signals into electrical signals, namely photomultiplier tubes (Photo Multiplier, PMT) using vacuum tubes, photodetectors using silicon materials, and photodetectors using nitride Photodetectors of gallium compound semiconductors.

[0003] Of the three approaches, photomultiplier tubes are expensive, require high operating voltages, and are prone to breakage of vacuum tubes. The silicon photodetector has the characteristics of easy fabrication, low cost, and low operating voltage. Although silicon photodetectors have excellent performance in detecting longer wavelengths of visible light and infrared light, they are less sensitive to shorter wavelengths of ultra...

Claims

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