Ultra violet ray photo detector based on gallium nitride semiconductor

A photodetector and ultraviolet technology, which is applied in semiconductor devices, photometry, and electrical solid state devices, can solve problems such as excessive differences in lattice constants, affecting performance, and poor epitaxy structures.

Active Publication Date: 2006-03-29
FORMOSA EPITAXY INCORPORATION +1
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Problems solved by technology

[0005] One of the common problems of conventional GaN semiconductor devices is the large difference in lattice constant between adjacent semiconductor layers
The excessive stress caused by the difference in the lattice structure often makes the epitaxial structure of the semiconductor device poor, thereby affecting its performance

Method used

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  • Ultra violet ray photo detector based on gallium nitride semiconductor
  • Ultra violet ray photo detector based on gallium nitride semiconductor
  • Ultra violet ray photo detector based on gallium nitride semiconductor

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Embodiment Construction

[0028] figure 2 is a schematic diagram of the first embodiment of the ultraviolet photodetector structure of the present invention. Such as figure 2 As shown, this embodiment uses C-Plane, R-Plane or A-Plane alumina single crystal (Sapphire) or silicon carbide (6H-SiC or 4H-SiC) as the substrate 10, and other materials that can be used for the substrate 10 Also includes Si, ZnO, GaAs or spinel (MgAl 2 o 4 ), or a single crystal oxide whose lattice constant is close to that of a nitride semiconductor, and then an n-type contact layer 20 is formed on one side of the substrate 10. The n-type contact layer 20 is made of n-type doped and has a specific composition Al a Ga b In 1-a-b N (0≤a, b≤1, a+b≤1), the thickness is between 3000 Å and 40000 Å, and the growth temperature is between 700°C and 1200°C. Then, a light absorbing layer 32 is formed on the n-type contact layer 20, and the light absorbing layer 32 is made of undoped Al with a specific composition. c Ga d In 1...

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Abstract

The invention provides a GaN semiconductor-based ultraviolet (UV) detector structure, from the substrate up, in sequence comprising n-type contact layer, light absorbing layer, light transmitting layer and p-type contact layer, all made of AlGaInN tetra-compound semiconductor material. By changing Al, Ga and In compositions of the semiconductor material, on one hand, these semiconductor layers can possess the needed energy gap, thus able to be specially sensitive to the optical reaction with respect to specific-wavelength UV; on the other hand, these semiconductor layers can possess matching crystal lattice constants, thus able to avoid the related problem of overlarge stress and simultaneously obtaining a UV detector with higher-quality crystal lattice structure. And the structure further comprises anode on the p-type contact layer, light transmitting Ohm contact layer and anti-reflecting layer as well as cathode on the n-type contact layer.

Description

technical field [0001] The invention relates to an ultraviolet photodetector, in particular to an ultraviolet photodetector structure using gallium nitride compound semiconductor. Background technique [0002] At present, there are three conventional methods for photodetectors (Photo Detectors) that can convert light signals into electrical signals, namely photomultiplier tubes (Photo Multiplier, PMT) using vacuum tubes, photodetectors using silicon materials, and photodetectors using nitride Photodetectors of gallium compound semiconductors. [0003] Of the three approaches, photomultiplier tubes are expensive, require high operating voltages, and are prone to breakage of vacuum tubes. The silicon photodetector has the characteristics of easy fabrication, low cost, and low operating voltage. Although silicon photodetectors have excellent performance in detecting longer wavelengths of visible light and infrared light, they are less sensitive to shorter wavelengths of ultra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/09H01L27/14G01J1/02
Inventor 武良文涂如钦游正璋温子稷简奉任
Owner FORMOSA EPITAXY INCORPORATION
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