MIS capacitor lower piezoresistance structure adopting substrate grid and making method
A manufacturing method and substrate gate technology, applied in the field of sensors, can solve problems such as increasing the difficulty of the process, achieve the effects of simplifying the structure and process, realizing self-alignment, and avoiding protection
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[0028] The piezoresistive structure under the MIS capacitance of the substrate gate is used to detect the displacement of the nano-beam. The structure includes a nano-beam 1 made of the top silicon of the SOI silicon wafer; the nano-beam is provided with a doped region, including lightly doped The impurity region 5 and the heavily doped region 6 located at both ends of the lightly doped region; the bottom of the two ends of the nanobeam is fixed on the silicon substrate 4 through the oxide layer 3, and freely vibrates in the z direction; the lightly doped region and A gap 7 is provided between the silicon substrates; a pressure welding block 8 is provided on the heavily doped regions at both ends of the nano-beam.
[0029] The nanobeam mentioned in the present invention refers to a beam structure with a thickness less than 100 nanometers. Figure 1a -1c shows the cross-sectional view of the substrate electrode and the double-terminal fixed-supported nanobeam structure. The na...
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