Method for manufacturing silicon carbide semiconductor device
A semiconductor and silicon carbide technology, which can be used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as poor characteristics of silicon oxide films.
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[0029] figure 1 to 6 are cross-sectional views showing steps of manufacturing a MOSFET representing a silicon carbide semiconductor device in the embodiment. although figure 1 to 6 only show two transistor cells representing a part of the vertical MOSFET, but a large number of transistor cells are integrated to constitute one vertical MOSFET.
[0030] exist figure 1 In the steps shown, an n-type 4H (hexagonal)-SiC (4 indicates the number of layers stacked in one cycle) substrate 10 is prepared, which has, for example, a resistivity of 0.02 Ωcm and a thickness of 400 μm, and has a thickness in [ The (0001) plane with an inclination angle of about 8° in the 11-20] direction was used as the main surface. Then, using CVD epitaxial growth including in-situ doping, grow on the 4H-SiC substrate 10, for example, containing about 5×10 15 cm -3 concentration of n-type dopant and has an epitaxial growth layer 11 with a thickness of about 10 μm. The outermost surface of the epitaxia...
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