Semiconductor device and method for manufacturing the same

Inactive Publication Date: 2011-12-15
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0039]According to an embodiment of the present invention, oxygen-excess silicon oxide (SiOX (X>2)) is used for a base insulating layer of a top-gate structure or for a protective insulating layer of a botto

Problems solved by technology

Change in the threshold voltage of a transistor including an oxide semiconductor due to light irradiation or a BT test considerably decreases the reliability of the transistor including an oxide semiconductor.
Note that in a conventional transistor including an oxide semic

Method used

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  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same

Examples

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embodiment 1

[0059]In this embodiment, modes of a semiconductor device and a method for manufacturing the semiconductor device will be described with reference to FIGS. 1A to 1C, FIGS. 2A to 2D, FIGS. 3A to 3E, FIGS. 4A to 4E, FIGS. 5A to 5E, FIGS. 6A to 6E, and FIGS. 7A to 7E.

[0060]FIGS. 1A to 1C are a plan view and cross-sectional views, illustrating a transistor 151 which is a top-gate top-contact type transistor as an example of a semiconductor device of an embodiment of the present invention. Here, FIG. 1A is a plan view, FIG. 1B is a cross-sectional view along A-B of FIG. 1A, and FIG. 1C is a cross-sectional view along C-D of FIG. 1A. Note that some components of the transistor 151 (e.g., a gate insulating layer 112) are omitted in FIG. 1A for brevity.

[0061]The transistor 151 illustrated in FIGS. 1A to 1C includes, over a substrate 100, a base insulating layer 102, an oxide semiconductor layer 106, a source electrode 108a, a drain electrode 108b, the gate insulating layer 112, and a gate e...

embodiment 2

[0156]A semiconductor device (also referred to as a display device) with a display function can be manufactured using the transistor an example of which is described in Embodiment 1. Moreover, part or the whole of circuitry which includes the transistor can be formed over a substrate where a pixel portion is formed, whereby a system-on-panel can be obtained.

[0157]In FIG. 8A, a sealant 205 is provided so as to surround a pixel portion 202 provided over a first substrate 201, and the pixel portion 202 is sealed between the first substrate 201 and a second substrate 206. In FIG. 8A, a scan line driver circuit 204 and a signal line driver circuit 203 which are formed using a single crystal semiconductor layer or a polycrystalline semiconductor layer over a substrate separately prepared are mounted in a region that is different from the region surrounded by the sealant 205 over the first substrate 201. Further, various signals and potentials are supplied to the signal line driver circuit...

embodiment 3

[0213]A semiconductor device which is an embodiment of the present invention can be applied to a variety of electronic appliances (including game machines). Examples of electronic appliances include a television set (also referred to as a television or a television receiver), a monitor of a computer or the like, a camera such as a digital camera or a digital video camera, a digital photo frame, a mobile phone set (also referred to as a mobile phone or a mobile phone device), a portable game console, a portable information terminal, an audio reproducing device, a large-sized game machine such as a pachinko machine, and the like. Examples of electronic appliances each including the semiconductor device described in the above embodiment will be described.

[0214]FIG. 12A illustrates a notebook personal computer including a main body 301, a housing 302, a display portion 303, a keyboard 304, and the like. By applying the semiconductor device described in Embodiment 1 or 2, the notebook pe...

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Abstract

An object of an embodiment of the present invention is to manufacture a highly-reliable semiconductor device comprising a transistor including an oxide semiconductor, in which change of electrical characteristics is small. In the transistor including an oxide semiconductor, oxygen-excess silicon oxide (SiOX (X>2)) is used for a base insulating layer of a top-gate structure or for a protective insulating layer of a bottom-gate structure. By using the oxygen-excess silicon oxide, oxygen is discharged from the insulating layer, and oxygen deficiency of an oxide semiconductor layer and the interface state density between the oxide semiconductor layer and the base insulating layer or the protective insulating layer can be reduced, so that the highly-reliable semiconductor device in which change of electrical characteristics is small can be manufactured.

Description

TECHNICAL FIELD[0001]The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device.[0002]Note that a semiconductor device in this specification refers to all electronic devices which can function by utilizing semiconductor characteristics, and electro-optical devices, semiconductor circuits, and electronic devices are all semiconductor devices.BACKGROUND ART[0003]A technique by which transistors are formed using semiconductor thin films formed over a substrate having an insulating surface has been attracting attention. The transistor is applied to a wide range of electronic devices such as an integrated circuit (IC) or an image display device (display device). A silicon-based semiconductor material is widely known as a material for a semiconductor thin film applicable to the transistor; in addition, an oxide semiconductor has been attracting attention as another material.[0004]For example, a transistor whose active layer uses an amor...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L21/336
CPCH01L29/66742H01L29/66969H01L29/7869H01L29/78606H01L2924/0002H01L2924/00H01L29/78603H01L22/10H01L23/564
Inventor YAMAZAKI, SHUNPEIENDO, YUTA
Owner SEMICON ENERGY LAB CO LTD
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