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Preparation method and application of transparent conductive oxide film

An oxide thin film, transparent and conductive technology, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of limited carrier mobility improvement ability, high preparation cost, and increased process complexity, so as to improve the carrier Mobility, carrier mobility improvement, and the effect of increasing short-circuit current density

Inactive Publication Date: 2020-04-28
SHENZHEN INST OF WIDE BANDGAP SEMICON
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  • Abstract
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  • Claims
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Problems solved by technology

However, it is difficult for these doped metal oxides to obtain high-μ transparent conductive films after deposition, and it is often necessary to use methods such as post-annealing to achieve higher-μ oxide materials.
This not only increases the complexity of the process, but also limits its application in closed process spaces or optoelectronic devices with temperature limitations, such as silicon heterojunction solar cells, whose process temperature should not exceed 200 °C
On the other hand, the post-annealing step is not a perfect solution. The above-mentioned transparent conductive oxides often have the defect of poor stability. The post-annealing step may be accompanied by the re-oxidation of metal elements, and then accompanied by the deterioration of the electrical properties of the material.
[0004] In addition, the atomic radius of these metal elements is often quite different from that of In, and it is difficult to achieve a perfect continuation of the lattice structure after doping, which affects the scattering mechanism of carriers inside the material, thereby affecting the improvement potential of μ
At the same time, these doped metal elements are all transition metals, often have multiple oxidation states, it is difficult to realize the regulation of the optical properties of the transparent conductive layer in a wide band, and increase the cost of material manufacturing
The main technical problems at present are: (1) It is difficult to realize the low-temperature one-step preparation of transparent conductive oxide films with high carrier mobility; (2) The ability to increase the carrier mobility is limited and the material stability is not good; (3) ) is doped with transition metal elements, and the optical properties are difficult to control; (4) consumes transition metals, and the preparation cost is high

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  • Preparation method and application of transparent conductive oxide film
  • Preparation method and application of transparent conductive oxide film
  • Preparation method and application of transparent conductive oxide film

Examples

Experimental program
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Effect test

Embodiment 1

[0048] Example 1: Add argon into the chamber, use RF magnetron sputtering deposition, use fluorine-doped indium oxide as the target, the fluorine / indium atomic ratio in the target is 17%, the argon flow rate is 50sccm, and the deposition temperature is 100℃ , Deposition pressure 1.0×10 -4 Pa, deposition power density 1.8W / cm 2 . A film of 75nm thickness is deposited on the surface of Corning glass. For comparison, take In 2 O 3 :SnO 2 = 9:1 target, for sputtering deposition of conventional ITO film, ITO film thickness is 75nm.

[0049] Perform EDAX energy spectrum analysis on the prepared fluorine-doped indium oxide film to analyze the proportion of doping elements; perform Hall test and UV-Vis-IR test on the fluorine-doped indium oxide film and ITO respectively to evaluate the electrical and optical properties of the comparative film performance. The test results show that in the prepared fluorine-doped indium oxide, the fluorine / indium atomic ratio is -17%, and the carrier mo...

Embodiment 2

[0050] Example 2: Add argon and hydrogen into the chamber, use RF magnetron sputtering deposition, use fluorine-doped indium oxide as the target, the fluorine / indium atomic ratio in the target is 10%, the argon flow rate is 100 sccm, and the hydrogen gas is 2 sccm , Deposition temperature 120℃, deposition pressure 5.0×10 -4 Pa, deposition power density 0.5W / cm 2 . A 100nm thick film was deposited on the surface of Corning Glass for elemental analysis and electrical performance testing.

[0051] The results show that the fluorine / indium atomic ratio is ~10%, and its carrier mobility is 86cm 2 V -1 s -1 , The resistivity is 5.8×10 -4 Ωcm.

Embodiment 3

[0052] Example 3: Add argon and water vapor into the chamber, and deposit by DC magnetron sputtering, using fluorine-doped indium oxide as the target, the fluorine / indium atomic ratio in the target is 25%, and the argon flow rate is 100sccm. Temperature 25℃, deposition pressure 1.0×10 -2 , Water vapor partial pressure 5.0×10 -4 Pa, deposition power density 3W / cm 2 . A film with a thickness of 100nm was deposited on the surface of Corning glass, and then annealed at 450°C for 10 minutes in a nitrogen atmosphere for elemental analysis and electrical performance testing.

[0053] The results show that the fluorine / indium atomic ratio is ~25%, and the carrier mobility is 131cm 2 V -1 s -1 , The resistivity is 2.6×10 -4 Ωcm.

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Abstract

The invention provides a preparation method and application of a transparent conductive oxide film. According to the preparation method and application of the transparent conductive oxide film, magnetron sputtering technology is adopted; through process regulation and control, the high-efficiency deposition of a high-quality thin film can be realized; the preparation of a transparent conductive oxide film with carrier mobility higher than 60cm<2>V<-1 >s<-1> can be realized under a low-temperature condition; the electrical property of the oxide film is equivalent to that of ITO; and the opticalabsorptivity of the oxide film in a UV-Vis-IR full-wave band range is obviously reduced compared with that of the ITO. The fluorine-doped indium oxide transparent conductive oxide film prepared by the invention has good thermal stability; heat treatment at 250 DEG C or below basically does not cause the deterioration of material properties; the performance of the fluorine-doped indium oxide filmsubjected to proper post-treatment can be further improved; in addition, transition metal elements are not used, and therefore, the performance of the oxide film is stable, and meanwhile, the opticalproperties of the oxide film can be effectively regulated and controlled; and since the transition metal elements are not used, preparation cost is low.

Description

Technical field [0001] The invention belongs to the technical field of optoelectronic devices, and particularly relates to a preparation method and application of a transparent conductive oxide film. Background technique [0002] In optoelectronic devices such as light-emitting diodes and high-efficiency solar cells, transparent electrodes are required for high current density (~40mA / cm 2 Or higher) The collection and conduction of electricity requires the transparent electrode material to have both high electrical conductivity and high transmittance characteristics, and to be able to achieve good contact with the metal electrode. Among them, indium oxide-based transparent conductive oxides represented by ITO (Indium Tin Oxide) have been extensively researched, developed and applied. In terms of material properties, the material conductivity σ=Nqμ (where N is the carrier concentration and μ is the carrier mobility). According to this formula, increasing N or μ can achieve the pu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0224
CPCH01L31/022466H01L31/1884Y02P70/50
Inventor 韩灿M·泽曼O·伊莎贝拉
Owner SHENZHEN INST OF WIDE BANDGAP SEMICON
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