Ternary all-polymer solar cell

A solar cell and polymer technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of the research lag of non-fullerene electron acceptor materials, and achieve the improvement of photoelectric conversion performance, increase short-circuit current density, and inhibit dual The effect of molecular charge recombination

Active Publication Date: 2018-11-06
NANJING UNIV OF POSTS & TELECOMM
View PDF8 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, research on non-fullerene electron acceptor materials for ternary systems still lags behind

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ternary all-polymer solar cell
  • Ternary all-polymer solar cell
  • Ternary all-polymer solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Embodiment 1 (control group)

[0032]Clean the substrate composed of transparent substrate layer and transparent conductive cathode ITO with surface roughness less than 1nm, and blow dry with nitrogen after cleaning; spin-coat ZnO (4500rpm, 40s, 25nm) on the surface of transparent conductive cathode ITO to prepare cathode buffer layer, and the formed film was thermally annealed (200°C, 60min); the PTB7-Th:N2200 photoactive layer (2000rpm, 60s, 95nm) was prepared by spin coating on the cathode buffer layer, and the mass ratio was 1:1; Evaporation of MoO on the surface of the photoactive layer 3 (8nm); metal anode Ag (80nm) was vapor-deposited on the anode buffer layer. Under standard test conditions (AM1.5, 100mW / cm 2 ), the measured open circuit voltage of the device (V OC )=0.80V, short-circuit current (J SC )=11.1mA / cm 2 , fill factor (FF) = 0.45, photoelectric conversion efficiency (PCE) = 3.96%.

Embodiment 2

[0034] Clean the substrate composed of transparent substrate layer and transparent conductive cathode ITO with surface roughness less than 1nm, and blow dry with nitrogen after cleaning; spin-coat ZnO (4500rpm, 40s, 25nm) on the surface of transparent conductive cathode ITO to prepare cathode buffer layer, and the formed film was thermally annealed (200°C, 60min); the PTB7-Th:N2200:RTCN photoactive layer (2000rpm, 60s, 95nm) was prepared by spin coating on the cathode buffer layer, with a mass ratio of 1:1 :0.1; evaporate MoO on the surface of the photoactive layer 3 (8nm); metal anode Ag (80nm) was vapor-deposited on the anode buffer layer. Under standard test conditions (AM 1.5, 100mW / cm 2 ), the measured open circuit voltage of the device (V OC )=0.81V, short-circuit current (J SC )=13.1mA / cm 2 , fill factor (FF) = 0.47, photoelectric conversion efficiency (PCE) = 5.02%.

Embodiment 3

[0036] Clean the substrate composed of transparent substrate layer and transparent conductive cathode ITO with surface roughness less than 1nm, and blow dry with nitrogen after cleaning; spin-coat ZnO (4500rpm, 40s, 25nm) on the surface of transparent conductive cathode ITO to prepare cathode buffer layer, and the formed film was thermally annealed (200°C, 60min); the PTB7-Th:N2200:RTCN photoactive layer (2000rpm, 60s, 95nm) was prepared by spin coating on the cathode buffer layer, with a mass ratio of 1:1 :0.2; evaporate MoO on the surface of the photoactive layer 3 (8nm); metal anode Ag (80nm) was vapor-deposited on the anode buffer layer. Under standard test conditions (AM 1.5, 100mW / cm 2 ), the measured open circuit voltage of the device (V OC )=0.82V, short-circuit current (J SC )=13.6mA / cm 2 , fill factor (FF) = 0.48, photoelectric conversion efficiency (PCE) = 5.60%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a ternary all-polymer solar cell and belongs to the technical field of photovoltaics. A non-fullerene small molecule receptor with strong crystallinity is added to an optical active layer of a binary all-polymer solar cell as a third component. An inversion structure is adopted by the cell; and the optical active layer is prepared from the following components in percentages by weight: 41.6-50% of an electron donor, 41.6-50% of an electron receptor and 0-16.6% of the non-fullerene small molecule receptor with the strong crystallinity. A non-fullerene small molecule receptor material with strong crystallinity is added to the optical active layer, so that spectral absorption is widened, phase separation is improved and bimolecular charge recombination can be inhibited, thereby causing more effective charge generation and transportation, improving the short-circuit current density of a device and finally improving the photoelectric conversion property of the device. The ternary all-polymer solar cell disclosed by the invention has the advantages of being high in photoelectric conversion property, simple in preparation process, short in process and low in cost.

Description

technical field [0001] The invention belongs to the field of photovoltaic technology, and in particular relates to an organic polymer photovoltaic device, in particular to a ternary all-polymer solar cell. Background technique [0002] Bulk heterojunction (BHJ) polymer solar cells (PSCs), as a promising green renewable energy technology, has gradually become an A hotspot of research. Currently, the highest photoelectric power conversion efficiency (PCE) of single-junction cells has exceeded 13%. Among them, the all-polymer solar cells composed of p-type conjugated polymers as donors and n-type conjugated polymers as acceptors, compared with conventional polymer:fullerene-based polymer solar cells, have Many potential advantages have attracted widespread attention. For example, the easily tunable absorption and molecular energy levels, and better morphological stability compared with fullerene derivatives, etc. So far, the highest efficiency of all-polymer solar cells has...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46
CPCH10K85/00H10K85/211H10K30/00Y02E10/549H10K85/151H10K30/30H10K85/6572H10K85/113H10K30/82
Inventor 赖文勇张建东汪洋杜斌黄维
Owner NANJING UNIV OF POSTS & TELECOMM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap