165results about How to "High film forming rate" patented technology

Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device which are able to form a conductive film, which is dense, includes a low concentration of source-derived impurities and has low resistivity, at a higher film-forming rate. The substrate processing apparatus includes a processing chamber configured to stack and accommodate a plurality of substrates; a first processing gas supply system configured to supply a first processing gas into the processing chamber; a second processing gas supply system configured to supply a second processing gas into the processing chamber; and a control unit configured to control the first processing gas supply system and the second processing gas supply system. Here, at least one of the first processing gas supply system and the second processing gas supply system includes two nozzles which are vertically arranged in a stacking direction of the substrates and have different shapes, and the control unit is configured to supply at least one of the first processing gas and the second processing gas into the processing chamber through the two nozzles having different shapes when films are formed on the substrates by supplying the first processing gas and the second processing gas into the processing chamber at pulses having different film-forming rates.

The invention discloses a method for processing the surface of an attachment-resisting plate. The method comprises the following steps: providing an attachment-resisting plate with a smooth surface; patterning the attachment-resisting surface of the attachment-resisting plate with a smooth surface to form an uneven attachment-resisting surface; blasting the attachment-resisting surface; and meltallizing the attachment-resisting surface after blasting. The smooth surface of the attachment-resisting plate is subject to the patterning, the blasting and the meltallizing so that the surface of theattachment-resisting plate has corrosion resistance, rust prevention, abrasion resistance, lubrication, roughness, adsorption, insulation, heat insulation and other properties; the attachment-resisting surface of the attachment-resisting plate achieves even roughness; and the attachment-resisting plate can easily absorb target atoms or large-sized particles so that the target atoms or large-sizedparticles do not fall on a substrate, thereby increasing the sediment capability of the attachment-resisting plate, improving the cleanness of the inner wall of a sputtering machine, improving the filming rate of sputtering and prolonging the service life of the attachment-resisting plate.

Disclosed is a polyimide film prepared from an aromatic tetracarboxylic acid component consisting essentially of 3,3′,4,4′-biphenyltetracarboxylic dianhydride and an aromatic diamine component consisting essentially of not less than 65 mol phenylenediamine % but less than 97 mol % of p-phenylenediamine and not less than 3 mol % but less than 35 mol % of 2,4-toluenediamine.

A process for depositing a film at a high rate and with superior step coverage properties, which comprises installing a pair of electrodes crossing with another pair of electrodes making a right angle with respect to the another pair, and applying a high frequency power differing in phase to the electrodes in order to apply a high frequency power having a Lissajous' waveform in the reaction space during the deposition of a film on a substrate.

The present invention herein provide a thin film-manufacturing device and a thin film-manufacturing method which are excellent in the mass-production ability and productivity, which permit the stable and continuous production of films over a long period of time while reproducing a good film thickness distribution, a good compositional distribution and a high film-forming rate and controlling the number of particles generated during the film-formation to a lower level. The device is one serving as a CVD device in which a film-forming gas is introduced into a reaction chamber from the upper portion of the chamber serving as a reaction space, through a shower head and a film is formed on a heated substrate, wherein the device is so designed that the upper reaction space is constructed by the substrate-supporting stage which is free of any rotational motion or free of any elevating motion, the shower head and a deposition-inhibitory plate, that the substrate-supporting stage and the deposition-inhibitory plate are so arranged as to form, between them, a concentric gap or interstice serving as a gas-exhaust path through which an inert gas can flow from the upper portion of the gas-exhaust path along the deposition-inhibitory plate and that a lower space is formed on the secondary side of the gas-exhaust path.

The invention provides a method for synthesizing a NaA zeolite membrane with high membrane forming efficiency. The method is characterized by comprising the following steps: coating nano NaA molecular sieve crystal seeds by a thermal impregnation method, wiping the crystal seed layer of the surface of a carrier under an evacuated condition to ensure that the thickness of the crystal seed layer is uniform and the crystal seeds are coated evenly and continuously, and synthesizing for 2-6h at 80-100 DEG C by hydrothermal crystallization, so as to prepare the NaA zeolite membrane with high pass and preferable separation effect; due to the adoption of the method, the problems that the crystals are coated for several times, repeated hydrothermal synthesizes are required and the membrane forming efficiency is low when preparing the NaA membrane in the prior art are solved mainly.

The invention discloses a chromizing-free anodic oxidation treatment method of the surfaces of an aviation 2 series and 7 series aluminium alloys, which is an improvement of a surface anodic oxidation treatment method of a sample in a standard aluminium and an aluminium alloy sulfuric acid anodic oxidation technology (HB/Z 233-93) of the PRC aviation industry, a processing solution contains no chromium in an anodic oxidation step, and an anodic oxidation solution comprises sulfuric acid and a modifier. The film weight of a prepared anodic oxidation film is within a range from 10 mg/dm <2> to 75 mg/dm <2> through the matching of anodic oxidation technology conditions, and in addition, the invention meets the corrosion resistance of a film layer and the combination property of the anodic oxidation film and an organic coating and also prolongs the fatigue life of workpieces manufactured by the aviation 2 series and 7 series aluminium alloys.

A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the laminate films are formed, and forming the laminate films on the surface on which the laminate films are formed.

The present invention discloses a Tio2 film adulterated with rare earth, wherein the molecule percentage content of titanium and rare earth are as follows: titanium 85%-99%, rare earth 1%-15%. The preparation of the film adopts normal pressure thermal decomposition chemical vapor deposition method, wherein a propodosoma combination is deposited onto a glass substrate. The Tio2 film adulterated with rare earth of the present invention has excellent photocatalysis activity, hydrophilicity and optical property, and can be widely used for glass external wall, indoor decorating, etc,. The present invention greatly enlarges the application area of Tio2 film, and is hopeful for generating great economy, environment and social benefits.

A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film that is higher in quality than a TiN film formed by a conventional CVD method at a higher film-forming rate, that is, with a higher productivity than a TiN film formed by an ALD method. The method includes steps of: (a) loading a substrate into a processing chamber; (b) forming a predetermined film on the substrate by simultaneously supplying the first processing gas and the second processing gas into the processing chamber; (c) stopping the supply of the first processing gas and the second processing gas and removing the first processing gas and the second processing gas remaining in the processing chamber; (d) modifying the film formed on the substrate by supplying the second processing gas into the processing chamber after the step (c); and (e) unloading the substrate from the processing chamber, wherein, in the step (b), a time period for supplying the second processing gas into the processing chamber is longer than a time period for supplying the first processing gas into the processing chamber.

A film forming unit includes a source vessel for receiving a raw material from which source gas is produced, a processing vessel for applying a film forming process on a semiconductor substrate, a source supply line for supplying the source gas from the source vessel to the processing vessel, a gas exhaust line for exhausting gas from the processing vessel, having a vacuum pump system structured by a turbo molecular pump and a dry pump, and a pre-flow line branching off from the source supply line while bypassing the processing vessel and the turbo molecular pump, and joining to the gas exhaust line. Moreover, the source supply line includes piping having an inner diameter greater than 6.4 mm, and a turbo molecular pump is provided in the pre-flow line.

In a rotary magnet sputtering apparatus, a target consumption displacement quantity is measured, and corresponding to the measurement results, a distance between a rotating magnet group and a target is adjusted, and uniform film forming rate is achieved over a long period of time so as to reduce the change of a target surface due to consumption of the target and to reduce the change of the film forming rate with time. An ultrasonic sensor or a laser transmitting/receiving device may be used as a means for measuring the consumption displacement quantity of the target.

It is an object of the invention to provide a method for production of various oxide and/or hydroxide coatings with various functions and constructions on metal materials from aqueous solutions, and metal materials having such coatings. There are provided specifically a method for production of a metal oxide and/or metal hydroxide coated metal material characterized by immersing a metal material or electrolyzing a conductive material in an aqueous treatment solution at pH 2-7 containing metal ion and fluorine ion in a 4-fold molar ratio with respect to the metal ion, and/or containing a complex ion comprising at least a metal and fluorine in a 4-fold molar ratio with respect to the metal, to form on the surface of the metal material a metal oxide and/or metal hydroxide coating containing the metal ion, as well as a metal oxide and/or metal hydroxide coated metal material characterized by having a metal oxide and/or metal hydroxide coating produced by the method.

A film forming method includes a step of arranging a wafer, on which an insulating film is formed, in a processing chamber of a film forming apparatus and a surface modification step of supplying a compound gas containing silicon atoms and an OH group-donating gas into the processing chamber so that Si—OH groups are formed on the surface of the insulating film. The film forming method further includes a film forming step of supplying a film forming gas containing a manganese-containing material into the processing chamber so that a manganese-containing film is formed on the surface of the insulating film on which the Si—OH groups have been formed through a CVD method.

The invention relates to a vapor deposition mask, and mainly solves the technical problem that organic particles can not reach a substrate during vapor deposition due to the shielding of a mask opening wall, in a conventional OLED manufacturing technology. The problem is relatively well solved by adopting a technical solution that the vapor deposition mask is a quadrilateral metal plate and comprises an ITO surface contacting with an indium tin oxide (ITO) substrate and a vapor deposition surface; the mask is provided with a through hole penetrating through the ITO surface and the vapor deposition surface; and the opening size of the through hole on the ITO surface is less than the opening size on the vapor deposition surface. The vapor deposition mask can be applied in industrial production of organic light emitting diodes.

A hafnium-containing material is presented for forming a film having excellent vaporization stability and higher film formation rate. Also a method for producing the film is presented. The hafnium-containing material for film formation has a bond of a hafnium atom with a nitrogen atom, or a bond of a hafnium atom and an oxygen atoms. Zr content contained in the material is equal to or less than 650 ppm.

The invention relates to a mask plate and a processing method thereof. The mask plate comprises an indium tin oxide (ITO) contact surface and an evaporation surface, wherein a plurality of evaporation holes are formed on the evaporation surface; the evaporation holes penetrate through the ITO contact surface from the evaporation surface, and the section of the evaporation holes is in a step shape; the evaporation holes comprise first sections and second sections which are coaxially arranged; the sizes of the evaporation holes are gradually shrunk from the first sections to the second sections. The processing of the evaporation holes is finished through a laser process only, the required secondary detachment and clamping process are saved in the process of processing the evaporation holes through multiple processes, and the mounting error brought by the operation of processing the evaporation holes through multiple processes is avoided, so that the processing precision and processing efficiency of the evaporation holes can be effectively improved, and the production cost of the mask plate is reduced; and the manufacturing cost of an organic light emitting diode (OLED) display screen is reduced, and the mask plate has wide market prospect.

There is provided a substrate treatment method performed on a substrate before forming a Cu film on a surface of a base material of the substrate. In the substrate treatment method, a substrate on which a Cu film is to be formed is prepared; and a specific treatment is performed on the substrate so that a crystalline orientation of the surface of the base material of the substrate has a small lattice mismatch with the Cu film.