Titanium dioxide film adulterated with rare soil and the preparing method

Abstract

The present invention discloses a Tio2 film adulterated with rare earth, wherein the molecule percentage content of titanium and rare earth are as follows: titanium 85%-99%, rare earth 1%-15%. The preparation of the film adopts normal pressure thermal decomposition chemical vapor deposition method, wherein a propodosoma combination is deposited onto a glass substrate. The Tio2 film adulterated with rare earth of the present invention has excellent photocatalysis activity, hydrophilicity and optical property, and can be widely used for glass external wall, indoor decorating, etc,. The present invention greatly enlarges the application area of Tio2 film, and is hopeful for generating great economy, environment and social benefits.

Description

technical field

[0001] The invention relates to a rare earth-doped titanium dioxide thin film and a preparation method thereof. Background technique

[0002] In recent years, semiconductor photocatalysis has become a research hotspot in the fields of photochemistry and environmental protection. Titanium dioxide semiconductor photocatalytic oxidation technology, as a new type of modern technology, can widely utilize natural resources-solar energy, and has the advantages of low energy consumption, mild reaction conditions, and easy operation, so it has been paid more and more attention. In addition, with the development of the times, people began to realize the importance of the environment and resources. Environmentally friendly green catalyst titanium dioxide, as a semiconductor metal oxide, its thin film has photocatalytic activity and hydrophilicity. "Photocatalytic" refers to a film that has self-cleaning properties, ie, when a titanium dioxide film is exposed to certai...

Examples

Embodiment 1

[0018] 1) Clean the glass substrate with 10% hydrofluoric acid;

[0019] 2) Put the cleaned glass substrate into the reaction chamber of the chemical vapor deposition device, and pass N 2 Clean the reaction chamber; heat TTIP to 100°C, Eu(TMHD) 3 heated to 150°C with N 2 Combining TTIP and Eu(TMHD) 3 Into the reaction chamber, where the flow rate of TTIP is 6.08slm, Eu(TMHD) 3 The flow rate is 1.02slm, N 2 The flow rate is 19.24slm. Under the temperature condition of 600°C, the substrate is moved at a speed of 1.0m / min for deposition. After the deposition is completed, stop feeding the gas, take out the glass substrate, and cool it down;

[0020] The prepared rare earth europium (Eu) doped titanium dioxide film (Eu:Ti=1.0:99.0) with a thickness of about 300nm has a photocatalytic performance nearly 10% higher than that of ordinary titanium dioxide film. After being excited by ultraviolet light, the naked eye can observe obvious The red light, detected by the instrument, h...

Embodiment 2

[0022] 1) Clean the glass substrate with 10% hydrofluoric acid;

[0023] 2) Put the cleaned glass substrate into the chemical vapor deposition device reaction chamber, and pass helium gas to clean the reaction chamber; heat ethyl titanate to 150°C, Tb(acac) 3 .Phen is heated to 100°C, and ethyl titanate and Tb(acac) are mixed with helium 3 .Phen passes into the reaction chamber, wherein the flow rate of ethyl titanate is 7.42slm, Tb(acac) 3 .Phen has a flow rate of 7.29slm, N 2 The flow rate is 18.20slm, and at a temperature of 570°C, move the substrate at a speed of 3.0m / min for deposition. After the deposition is completed, stop feeding the gas, take out the glass substrate, and cool it down;

[0024] The prepared rare earth samarium (Tb)-doped titanium dioxide film (Tb:Ti=15:85) with a thickness of about 120nm has a photocatalytic performance that is nearly 40% higher than that of ordinary titanium dioxide films. After being excited by ultraviolet light, green light can b...

Embodiment 3

[0026] 1) Clean the glass substrate with 10% hydrofluoric acid;

[0027] 2) Put the cleaned glass substrate into the chemical vapor deposition device reaction chamber, and pass in argon to clean the reaction chamber; heat the TTIP to 130°C, LaCl 3 Heated to 180 °C, TTIP and LaCl with argon 3 into the reaction chamber, and at the same time into O 2 , where the flow rate of TTIP is 12.16slm, LaCl 3 The flow rate is 3.39slm, O 2 The flow is 11.53slm, N 2 The flow rate is 12.76slm, and at a temperature of 580°C, move the substrate at a speed of 1.5m / min for deposition. After the deposition is completed, stop feeding the gas, take out the glass substrate, and cool it down;

[0028] The prepared rare earth lanthanum (La)-doped titanium dioxide film (La:Ti=1.9:98.1) with a thickness of about 500nm has a photocatalytic performance nearly 25% higher than that of ordinary titanium dioxide film. After being excited by ultraviolet light, green light can be observed , the luminescent ...

technical field

[0001] The invention relates to a rare earth-doped titanium dioxide thin film and a preparation method thereof. Background technique

[0002] In recent years, semiconductor photocatalysis has become a research hotspot in the fields of photochemistry and environmental protection. Titanium dioxide semiconductor photocatalytic oxidation technology, as a new type of modern technology, can widely utilize natural resources-solar energy, and has the advantages of low energy consumption, mild reaction conditions, and easy operation, so it has been paid more and more attention. In addition, with the development of the times, people began to realize the importance of the environment and resources. Environmentally friendly green catalyst titanium dioxide, as a semiconductor metal oxide, its thin film has photocatalytic activity and hydrophilicity. "Photocatalytic" refers to a film that has self-cleaning properties, ie, when a titanium dioxide film is exposed to certai...

Examples

Embodiment 1

[0018] 1) Clean the glass substrate with 10% hydrofluoric acid;

[0019] 2) Put the cleaned glass substrate into the reaction chamber of the chemical vapor deposition device, and pass N 2 Clean the reaction chamber; heat TTIP to 100°C, Eu(TMHD) 3 heated to 150°C with N 2 Combining TTIP and Eu(TMHD) 3 Into the reaction chamber, where the flow rate of TTIP is 6.08slm, Eu(TMHD) 3 The flow rate is 1.02slm, N 2 The flow rate is 19.24slm. Under the temperature condition of 600°C, the substrate is moved at a speed of 1.0m / min for deposition. After the deposition is completed, stop feeding the gas, take out the glass substrate, and cool it down;

[0020] The prepared rare earth europium (Eu) doped titanium dioxide film (Eu:Ti=1.0:99.0) with a thickness of about 300nm has a photocatalytic performance nearly 10% higher than that of ordinary titanium dioxide film. After being excited by ultraviolet light, the naked eye can observe obvious The red light, detected by the instrument, h...

Embodiment 2

[0022] 1) Clean the glass substrate with 10% hydrofluoric acid;

[0023] 2) Put the cleaned glass substrate into the chemical vapor deposition device reaction chamber, and pass helium gas to clean the reaction chamber; heat ethyl titanate to 150°C, Tb(acac) 3 .Phen is heated to 100°C, and ethyl titanate and Tb(acac) are mixed with helium 3 .Phen passes into the reaction chamber, wherein the flow rate of ethyl titanate is 7.42slm, Tb(acac) 3 .Phen has a flow rate of 7.29slm, N 2 The flow rate is 18.20slm, and at a temperature of 570°C, move the substrate at a speed of 3.0m / min for deposition. After the deposition is completed, stop feeding the gas, take out the glass substrate, and cool it down;

[0024] The prepared rare earth samarium (Tb)-doped titanium dioxide film (Tb:Ti=15:85) with a thickness of about 120nm has a photocatalytic performance that is nearly 40% higher than that of ordinary titanium dioxide films. After being excited by ultraviolet light, green light can b...

Embodiment 3

[0026] 1) Clean the glass substrate with 10% hydrofluoric acid;

[0027] 2) Put the cleaned glass substrate into the chemical vapor deposition device reaction chamber, and pass in argon to clean the reaction chamber; heat the TTIP to 130°C, LaCl 3 Heated to 180 °C, TTIP and LaCl with argon 3 into the reaction chamber, and at the same time into O 2 , where the flow rate of TTIP is 12.16slm, LaCl 3 The flow rate is 3.39slm, O 2 The flow is 11.53slm, N 2 The flow rate is 12.76slm, and at a temperature of 580°C, move the substrate at a speed of 1.5m / min for deposition. After the deposition is completed, stop feeding the gas, take out the glass substrate, and cool it down;

[0028] The prepared rare earth lanthanum (La)-doped titanium dioxide film (La:Ti=1.9:98.1) with a thickness of about 500nm has a photocatalytic performance nearly 25% higher than that of ordinary titanium dioxide film. After being excited by ultraviolet light, green light can be observed , the luminescent ...