Method for processing surface of attachment-resisting plate

Abstract

The invention discloses a method for processing the surface of an attachment-resisting plate. The method comprises the following steps: providing an attachment-resisting plate with a smooth surface; patterning the attachment-resisting surface of the attachment-resisting plate with a smooth surface to form an uneven attachment-resisting surface; blasting the attachment-resisting surface; and meltallizing the attachment-resisting surface after blasting. The smooth surface of the attachment-resisting plate is subject to the patterning, the blasting and the meltallizing so that the surface of theattachment-resisting plate has corrosion resistance, rust prevention, abrasion resistance, lubrication, roughness, adsorption, insulation, heat insulation and other properties; the attachment-resisting surface of the attachment-resisting plate achieves even roughness; and the attachment-resisting plate can easily absorb target atoms or large-sized particles so that the target atoms or large-sizedparticles do not fall on a substrate, thereby increasing the sediment capability of the attachment-resisting plate, improving the cleanness of the inner wall of a sputtering machine, improving the filming rate of sputtering and prolonging the service life of the attachment-resisting plate.

Description

technical field [0001] The invention relates to a vacuum sputtering technology, in particular to a method for treating the surface of a vacuum sputtering anti-sticking plate. Background technique [0002] Vacuum sputtering is a process in which electrons are accelerated to the substrate under the action of an electric field and collide with argon atoms, ionizing a large number of argon ions and electrons, and the electrons fly to the substrate. Under the action of the electric field, the argon ions accelerate the bombardment of the target, sputtering out a large number of target atoms, and the neutral target atoms (or molecules) are deposited on the substrate to form a film, and finally achieve the purpose of coating the substrate surface. The secondary electrons are affected by the Loren magnetic force of the magnetic field during the process of accelerating to the substrate, and are bound in the plasma region close to the target surface. The plasma density in this region i...

AI Technical Summary

Problems solved by technology

[0006] During the sputtering process using the above-mentioned sputtering machine, since the anti-impact surface 11 of the anti-impact plate 16 is smooth, its precipitation ability is not strong. On the one hand, the sputtered target atoms or large-sized particles will still fly to the sputtering machine. The surface of the inner wall affects its cleaning; on the other hand, due to the large-size particles flying to the substrate 15, it will cause the defect of low film formation rate

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