The invention relates to an IGBT device and a manufacturing method thereof. The manufacturing method of the IGBT device comprises the following steps that a substrate is formed, the substrate comprises a top surface, a bottom surface and a plurality of
trench gate structures, the top surface and the bottom surface are oppositely distributed, each
trench gate structure comprises a gate trench, a
gate dielectric layer covering the inner wall of the gate trench and a gate conductive layer filled in the gate trench, and the gate conductive layer protrudes out of the top surface of the substrate; forming isolation side walls covering the side walls of the gate conductive layer and sacrificial
layers located between the adjacent isolation side walls on the top surface of the substrate;
etching back the gate conductive layer, and forming a groove above the remaining gate conductive layer; forming a filling
dielectric layer filled in the groove; removing the sacrificial layer to form an opening exposing the substrate; and
etching the substrate downwards along the opening to form a
contact hole. According to the invention, the requirement on the alignment precision of the
contact hole mask plate and the gate trench
mask plate is reduced, and the consistency of
saturation voltage drop in the IGBT wafers and between the IGBT wafers is improved.