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Composite passivated anti-reflection film used for crystalline silicon solar battery and preparation method thereof

A solar cell, crystalline silicon technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of weakening passivation effect, reduced minority carrier life, reduced battery efficiency, etc., and achieves excellent passivation effect, good thermal stability, Good effect of anti-UV performance

Inactive Publication Date: 2011-08-17
上海太阳能电池研究与发展中心
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above preparation method determines that the passivation and anti-reflection effects of the a-SiNx:H film cannot be achieved at the same time.
In particular, the emitter on the light-facing side of the n-type battery is very p+ layer, using a-SiN x If :H is used as a passivation anti-reflection layer, the positive charge on the surface of silicon nitride will increase the leakage current and weaken the passivation effect
[0003] There are also crystalline silicon solar cells using a-SiN x / SiO 2 and a-SiN x :H / a-Si:H is used as a double composite layer surface passivation and anti-reflection film. Since the amorphous silicon passivation film is not compatible with the subsequent high-temperature process, such as the alloying temperature of the screen printing electrode at about 800 ° C, the non-crystalline Crystallization of crystalline silicon to prepare SiO 2 Thermal oxidation requires a high temperature of 900°C to 1050°C. This high temperature will deteriorate the quality of the solar-grade silicon material with a purity of 6N, increase the recombination in the body, reduce the minority carrier lifetime, and reduce the efficiency of the battery.

Method used

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  • Composite passivated anti-reflection film used for crystalline silicon solar battery and preparation method thereof
  • Composite passivated anti-reflection film used for crystalline silicon solar battery and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] For crystalline silicon solar cells, p-type silicon is the base material, and n+ is the emitter on the light-facing side.

[0025] 1. Quickly soak the surface of the n+ emitter in dilute hydrofluoric acid solution, and then grow a layer of a-Al with a thickness of 5nm by ALD method 2 o 3 Floor;

[0026] 2. Then put the sample in the annealing furnace and anneal in the mixed gas environment of nitrogen and water vapor ratio of 15:1. The annealing temperature is controlled at 500°C, and the annealing time is 30 minutes. 2 o 3 A layer of SiO with a thickness of 1.5nm is automatically generated between the layer and the surface of the n+ emitter 2 Floor;

[0027] 3. Using PECVD method in a-Al 2 o 3 A layer of a-Si with a thickness of 70nm is grown on the 1-X N X film. Among them, the component X=0.57, and the tested refractive index is 2.33.

Embodiment 2

[0029] For crystalline silicon solar cells, p-type silicon is the base material, and n+ is the emitter on the light-facing side.

[0030] 1. Quickly soak the surface of the n+ emitter in dilute hydrofluoric acid solution, and then grow a layer of a-Al with a thickness of 20nm by PECVD method 2 o 3 Floor;

[0031] 2. Then put the sample in the annealing furnace, and anneal in the mixed gas environment of nitrogen and water vapor ratio of 15:1, the annealing temperature is controlled at 600°C, the annealing time: 60 minutes, in 2 o 3 A layer of SiO with a thickness of 2nm is automatically generated between the layer and the surface of the n+ emitter 2 Floor;

[0032] 3. Using PECVD method in a-Al 2 o 3 A layer of a-Si with a thickness of 70nm is grown on the 1-X N X film. Among them, the component X=0.57, and the tested refractive index is 2.33.

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Abstract

The invention discloses a composite passivated anti-reflection film used for a crystalline silicon solar battery and a preparation method thereof. The composite passivated anti-reflection film consists of a silicon oxide (SiO2) layer, an amorphous alumina (a-Al2O3) layer and an amorphous silicon nitride (a-Si1-xNx) layer which are arranged on the emitter on a light receiving surface of the crystalline silicon solar battery in turn. The preparation method comprises the following steps of: preparing an a-Al2O3 layer on the emitter on the light receiving surface of the crystalline silicon solar battery by a plasma enhanced chemical vapor deposition (PECVD) process or an atomic layer deposition (ALD) process; forming the SiO2 layer between the emitter layer and the a-Al2O3 layer by an annealing process; and preparing the a-Si1-xNx layer on the a-Al2O3 layer by the PECVD process. The composite passivated anti-reflection film has the advantages that: the a-Si1-xNx anti-reflection film has a good anti-reflection effect; the a-Al2O3 / SiO2 composite passivated film has double effects of chemical passivation and field passivation and has a good passivation effect; the a-Si1-xNx / a-Al2O3 / Si2O composite passivated anti-reflection film has high thermal stability and is compatible with a subsequent battery preparation process; and the anti-ultraviolet (UV) performance is high.

Description

technical field [0001] The invention relates to a crystalline silicon solar cell, in particular to a composite passivation antireflection film for a crystalline silicon solar cell and a preparation method thereof. Background technique [0002] The passivation and anti-reflection of the emitter surface on the light-facing side of the crystalline silicon solar cell are to reduce photon loss and carrier recombination. At present, commercial crystalline silicon solar cells generally use plasma-enhanced chemical vapor deposition (PECVD) to prepare a-SiN x :H is used as a passivation and anti-reflection film on the light-facing surface, which is made of SiH 4 and NH 4 The reaction is generated. Among them, a-SiN x The film plays the role of anti-reflection, and the refractive index is between 1.8 and 2.4. Compared with the optimal refractive index of silicon cells, which is 2.33, the refractive index decreases with the increase of N content, and the anti-reflection effect decr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18C23C16/40
CPCY02P70/50
Inventor 褚君浩窦亚楠张传军李钊明
Owner 上海太阳能电池研究与发展中心
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