Laser-inducing preparation of size-controllable high-density nano silicon quanta array of points

Abstract

The method for preparing size-controllable high-density nano silicon quantum point array by laser induction includes: firstly, preparing multilayer modulated structure; using plasma reinforced chemical vapor-phase sedimentation techinque to prepare amorphous silicon orgermaium / amorphous silicon nitride or silicon dioxide single-layer or multilayer modulated structure, in which a-Si:H sublayer thickness is basically in accord with laser crystallized desired quantum point size; then using laser to induce crystallization; the substrate temp. is 150-250 deg.C.

Description

1. Technical field: [0001] The present invention proposes a new method for preparing a size-controllable high-density nano-silicon quantum dot array from two aspects of technical principle and implementation process, especially the preparation of a size-controllable high-density nano-silicon quantum dot array based on the principle of laser-induced restricted crystallization The array method, that is, the single-layer or multi-layer modulation structure of amorphous silicon or germanium / amorphous silicon nitride or silicon dioxide is prepared by plasma-enhanced chemical vapor deposition technology, which is a new generation of nano-electronics and nano-optoelectronics Key technologies in high-tech fields such as devices. 2. Background technology: [0002] Semiconductor monocrystalline silicon material is the backbone material of the current microelectronics industry, and has an irreplaceable position for other materials. However, can silicon materials continue to play an im...

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Problems solved by technology

[0004] The purpose of the present invention is exactly to the requirement of above three respects, proposes the new technology principle of preparation size controllable nano-silicon quantum dot, designs and provides a kind of new technical method in experiment simultaneously, utilizes this method not only with current microelectronic technology Compatible with the technology and avoiding the use of expensive ultra-fine processing technology, while obtaining high-density nano-silicon quantum dots with controllable size, it can also effectively passivate the surface of the nano-crystal grains to reduce the density of defect states, so it can show Quantum effects due to size changes

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