The invention discloses a Czochralski
crystal growing furnace and a measurement control method for the longitudinal
temperature gradient of the Czochralski
crystal growing furnace, and belongs to the field of
monocrystalline silicon production. The Czochralski
crystal growing furnace comprises a
crucible and a heater; a
thermal insulation layer is arranged on the periphery of the heater; the
crucible comprises a
quartz crucible body and a periphery supporting crucible body, wherein the
quartz crucible body is used for containing a melt, and the periphery supporting crucible body sleeves the outer side of the
quartz crucible body; the heater comprises a main heater body and an auxiliary heater body, wherein the main heater body surrounds the periphery of the crucible, and the auxiliary heater body is arranged at the bottom of the crucible; and a plurality of
thermocouple temperature measurement probes are arranged in the vertical direction outside the
thermal insulation layer at intervals, or the
thermal insulation layer is provided with a first window for allowing an
infrared thermometer to measure the temperature. According to the Czochralski crystal growing furnace and the measurement control method for the longitudinal
temperature gradient of the Czochralski crystal growing furnace, the temperature distribution of the melt in the
quartz crucible body is detected and controlled so as to realize scientific and accurate control over the crystal pulling process, the temperature of the melt at the bottom of the crucible is controlled to be as low as possible in the crystal pulling process so as to obtain monocrystal with lower
oxygen content, the highest temperature of the melt in the crucible is controlled to be as low as possible so as to obtain the monocrystal with lower defect density, and therefore the pulling speed is higher, the crystal pulling cost is lower, and in addition, the monocrystal quality is greatly improved.