Czochralski crystal growing furnace and measurement control method for longitudinal temperature gradient of Czochralski crystal growing furnace

Abstract

The invention discloses a Czochralski crystal growing furnace and a measurement control method for the longitudinal temperature gradient of the Czochralski crystal growing furnace, and belongs to the field of monocrystalline silicon production. The Czochralski crystal growing furnace comprises a crucible and a heater; a thermal insulation layer is arranged on the periphery of the heater; the crucible comprises a quartz crucible body and a periphery supporting crucible body, wherein the quartz crucible body is used for containing a melt, and the periphery supporting crucible body sleeves the outer side of the quartz crucible body; the heater comprises a main heater body and an auxiliary heater body, wherein the main heater body surrounds the periphery of the crucible, and the auxiliary heater body is arranged at the bottom of the crucible; and a plurality of thermocouple temperature measurement probes are arranged in the vertical direction outside the thermal insulation layer at intervals, or the thermal insulation layer is provided with a first window for allowing an infrared thermometer to measure the temperature. According to the Czochralski crystal growing furnace and the measurement control method for the longitudinal temperature gradient of the Czochralski crystal growing furnace, the temperature distribution of the melt in the quartz crucible body is detected and controlled so as to realize scientific and accurate control over the crystal pulling process, the temperature of the melt at the bottom of the crucible is controlled to be as low as possible in the crystal pulling process so as to obtain monocrystal with lower oxygen content, the highest temperature of the melt in the crucible is controlled to be as low as possible so as to obtain the monocrystal with lower defect density, and therefore the pulling speed is higher, the crystal pulling cost is lower, and in addition, the monocrystal quality is greatly improved.

Description

technical field [0001] The invention relates to the field of single crystal silicon production, in particular to a Czochralski single crystal furnace and a method for measuring and controlling its longitudinal temperature gradient. Background technique [0002] As extremely large-scale integrated circuits enter nanometer dimensions, the requirements for large-diameter and high-quality silicon single crystals with low oxygen content and ultra-low density defects are getting higher and higher, and the breakthrough and innovation of crystal pulling technology is particularly important. [0003] For a long time, crystal pulling technology has faced two major challenges. One is low-cost and high-quality single crystal growth technology, and the other is to control the crystal pulling process to obtain the stability and consistency of single crystal quality. There are many control factors in the crystal pulling process. Automatic control of diameter, automatic control of temperatu...

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Problems solved by technology

[0009] Conventional Czochralski single crystal uses a heater. During the crystal pulling process, the melt is in the heating area of ​​the heater. Adjust...

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