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Preparation method of polycrystalline silicon ingot

A technology of polysilicon and ingot casting, which is applied in the field of preparation of polysilicon ingots, can solve the problems of unstable production process and non-existence, and achieve the effects of high photoelectric conversion efficiency of cells, simple operation, and uniform distribution of crystal grains

Inactive Publication Date: 2015-06-17
HUNAN RED SUN PHOTOELECTRICITY SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The production process of this method is unstable, and it is a kind of full-melt high-efficiency polysilicon ingot casting technology, which does not have the advantage of growing polysilicon ingots with silicon materials as nucleation points

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A method for preparing a polysilicon ingot provided by the present invention, the specific steps are as follows, use a G5 type ingot furnace to cast an ingot, select a G5 quartz crucible, and perform conventional silicon nitride coating on the crucible. Select silicon granules with a purity of more than 99.999%, with a particle size of 200-400 μm and a weight of 1 kg; add silica sol, polyvinyl alcohol and alcohol to deionized water, and mix well to obtain a solution with a mass of 0.2 kg; Mix with the solution evenly to obtain a slurry. Cover the silicon nitride coating by brushing the slurry to form a slurry layer of about 1 mm, and dry it for use. Put the silicon raw material and electroactive dopant into the silicon-coated crucible, with a total weight of 500kg, and set the target resistivity to 1.8Ω·cm, then send the silicon-coated crucible into the ingot furnace, and run the casting Ingot process, complete the ingot casting process.

[0021] The obtained silicon ...

Embodiment 2

[0023] A method for preparing a polysilicon ingot provided by the present invention, the specific steps are as follows, use a G5 type ingot furnace to cast an ingot, select a G5 quartz crucible, perform a conventional silicon nitride coating on the crucible, and select a crystal with a purity of more than 99.99%. The ground silicon granules have a particle size of 1-100 μm and a weight of 5 kg. The silicon granules are washed with hydrogen peroxide, and then dried at 80° C. Add silica sol and methyl cellulose into the deionized water, mix uniformly to obtain a solution, the mass of the solution is 0.5 kg; mix the silicon granules and the solution uniformly to obtain a slurry. Cover the slurry on the silicon nitride coating by spraying to form a slurry layer of about 5 mm, and dry it for use. When charging, lay 20kg of silicon granules on the bottom of the crucible, then put the remaining silicon raw materials and electroactive dopants into the silicon-coated crucible, send the...

Embodiment 3

[0026] A method for preparing a polysilicon ingot provided by the present invention, the specific steps are as follows, use a G6 type ingot furnace to cast an ingot, select a G6 quartz crucible, and perform conventional silicon nitride coating on the crucible. Select silicon granules with a purity of more than 99.9%, with a particle size of 100-5000 μm, and a weight of 1 kg; select silicon nitride powder with a purity of more than 99.99%, with a particle size of 0.1-1 μm, and a weight of 0.1 kg; After the silicon powder is mixed, it is soaked and cleaned with alcohol, and then dried at 80°C. Add silica sol and methyl cellulose to deionized water, mix uniformly to obtain a solution, the mass of the solution is 0.2 kg; mix the mixture of silicon particles and silicon nitride powder with the solution uniformly to obtain slurry. Cover the slurry on the silicon nitride coating by roller coating to form a slurry layer of about 4 mm, and dry it for use. When charging, lay 5kg of gra...

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Abstract

The invention relates to a preparation method of a polycrystalline silicon ingot. The method comprises the following steps: (1) a binding agent, a dispersing agent, and silicon particles of which the purity is above 99.9 percent and the diameter is between 1 [mu]m and 5,000 [mu]m, are added into deionized water, a pulp is obtained after uniform mixing, and the mass percentage of the silicon particles in the pulp is not less than 50 percent; (2) in a quartz crucible with a silicon nitride coating on the inner surface, the pulp is applied on the surface of the silicon nitride coating through spray coating, roller coating or brush coating, so as to form a pulp layer with a thickness between 1 mm and 10 mm; the crucible with a silicon coating is obtained after drying; (3) the crucible with the silicon coating is sent into a polycrystalline silicon ingot furnace after being loaded with silicon materials, the silicon materials are heated after vacuum pumping, a silicon material melt is cooled for polycrystalline silicon growth after the silicon materials are completely molten, and the polycrystalline silicon ingot is obtained through annealing cooling after the polycrystalline silicon growth is completed. The polycrystalline silicon ingot obtained through the method can be used for the manufacturing of a solar battery, so that the average battery efficiency of a silicon wafer exceeds 18 percent.

Description

technical field [0001] The invention relates to a preparation method of polycrystalline silicon ingot. Background technique [0002] In the solar photovoltaic field, crystalline silicon accounts for more than 90% of the entire solar photovoltaic field due to its raw material source and preparation cost advantages. In the preparation process of crystalline silicon, polysilicon ingot technology plays a dominant role. At present, the existing polysilicon casting technologies mainly include full-melt high-efficiency polysilicon ingot casting technology and seeded crystal ingot casting technology (including quasi-single crystal ingot casting and the currently more popular semi-melt high-efficiency polycrystalline ingot casting technology). [0003] The main difference between these crystalline silicon ingot casting technologies is that quasi-single crystal ingot casting and semi-melting high-efficiency polycrystalline ingot casting must have seed crystals laid on the bottom of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
Inventor 明亮段金刚黄美玲谭晓松瞿海斌陈国红蔡先武
Owner HUNAN RED SUN PHOTOELECTRICITY SCI & TECH
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