127results about How to "Reduce the refractive index difference" patented technology

The invention provides a large-mode-area active optical fiber, which comprises a fiber core, a first cladding, a second cladding and a third cladding, wherein the first cladding, the second cladding and the third cladding sequentially encircle the periphery of the fiber core; the effective refractive index of the second cladding is lower than the effective refractive indexes of the first claddingand the fiber core; a pump core area encircles the outer side of the third cladding; an external cladding encircles the outer side of the pump core area and comprises a layer of air vent holes or capillary bars doped with quartz glass; and the effective refractive index of the external cladding is lower than that of the pump core area. On the premise of ensuring a large mode area of the active optical fiber, the optical fiber suppresses amplified spontaneous radiation, improves the stability of the optical fiber, and ensures the quality of light beam. The invention also provides a preparationmethod of the active optical fiber. By adopting a liquid phase multi-point doping mode of gas-phase aluminum doping and rare-earth ions, continuous doping for many times can be flexibly controlled and realized, the size of a rare-earth doped core bar is greatly increased, and uniform doping of the rare-earth ions and aluminum is simultaneously realized.

The invention relates to the field of organic polymer chemistry and discloses a T-chain unit phenyl-containing MTQ silicon resin and a preparation method thereof. The T-chain unit phenyl-containing MTQ silicon resin solves the problem that a MTQ silicon resin as a silicon rubber reinforcement filler leads to a large difference between refractive indexes of a packaging material and a LED chip because of a small refractive index of the MTQ silicon resin and thus optical efficiency of a semiconductor lighting device is reduced. The preparation method comprises that tetraethoxysilane as a Q chain unit source, phenyltrimethoxysilane as a T chain unit source, hexamethyldisiloxane as an M chain unit source and 1,3-divinyltetramethyldisiloxane as an M chain unit source undergo a co-hydrolytic condensation reaction in the presence of hydrochloric acid as a catalyst to produce the T-chain unit phenyl-containing MTQ silicon resin. The T-chain unit phenyl-containing MTQ silicon resin can improve luminous efficacy of a semiconductor lighting device and improve mechanical properties of a packaging material. The preparation method allows mild reaction conditions, has simple processes and is suitable for large-scale industrial production.

The present invention is proton exchange method and equipment for producing lithium niobate light waveguide. The production process includes cleaning substrate, preparing mask, photoetching to form waveguide pattern, proton exchnage, annealing, end polishing, regulating waveguide and inspection. The present invention uses lithium benzoate doluted benzoic acid solution as proteon source, and has high lithium ion density and low hydrogen ion density and thus low reeaction speed, low lithium ion exchanging amount, and refraction index difference between the waveguide and the substrate. The annealing results in refraction index distribution ever suitable for coupling with fiber, less corrosion of benzoic acid, less faults in waveguide and low waveguide loss.

An LED device includes a base, a base plate, a support, an LED chip, a first mixed colloid and a second mixed colloid, wherein the first mixed colloid and the second mixed colloid include colloid materials and insulating and heat-conducting materials; the heat-conducting materials include diamond powder, diamond-like powder or ceramic powder; the base plate and the support are arranged on the base; the first mixed colloid is applied between the base plate and the LED chip, so as to adhere and fix the LED chip and enhance the heat dissipation effect; and the second mixed colloid is poured into the base so as to coat the base plate and the LED chip, reduce the difference in the refractive index and further increase the total reflection angle and the light extraction efficiency.

The invention provides a silicon-based WDM optical transceiver module comprising a silicon photonic chip including a modulator array and a detector array; and a wavelength division multiplexer and a demultiplexer achieved based on a planar lightwave circuit (PLC). The wavelength division multiplexer and the modulator array are connected through packaging. The demultiplexer is connected to the detector array connected through packaging. A WDM optical module is achieved by packaging the wavelength division multiplexer chip and the demultiplexer chip through the silicon photonic chip and the PLC so as to avoid process difficulty of the silicon-based wavelength division multiplexer/demultiplexer. In view of low integration and high power consumption of a traditional WDM optical transceiver module based on discrete devices and PLC, the modulator array and the detector array are integrated by using silicon photon technology so as to greatly improve the integration of optical transceiver module and to reduce power consumption.

The invention discloses silicon carbide ceramic paste for photocuring and a preparation method thereof. The paste is prepared by mixing SiC mixed powder, a dispersing agent, a monomer, a compatilizerand a photoinitiator, wherein the surface of the SiC mixed powder is coated with a SiO2 layer, so that the refractive index difference between the final paste and light-cured resin is reduced, and then printing efficiency is further improved. SiO2 can improve the solid phase content of the whole slurry, so that the sintering density of sintered ceramic and the mechanical property of finally formedceramic can be improved during subsequent ceramic sintering. Through addition of the dispersing agent into the slurry, the agglomeration phenomenon of the slurry can be reduced, the dispersity is improved, and the solid phase content of the whole slurry can be increased. Verification finds that the solid phase content in the paste can finally reach 40%-60%.

Provided are a light controlling apparatus and a method of fabricating the same. The light controlling apparatus comprises: a first electrode unit and a second electrode unit facing each other; a liquid crystal unit between the first electrode unit and the second electrode unit, the liquid crystal unit including: a liquid crystal; a network having a first polymer polymerized from a first monomer having a similar shape as the liquid crystal and a second polymer polymerized from a second monomer having a shape different from the first monomer; and a wall having the first polymer and the second polymer.

The invention discloses a backlight module which at least comprises a light source, a light guide plate and a light conduction structure. The light source consists of a plurality of LEDs (Light-Emitting Diodes); each LED is provided with a light extraction surface; the light guide plate is made of transparent light guide material and comprises a light entrance surface and a light extraction surface perpendicular to the light entrance surface; the light conduction structure is made of transparent light guide material, comprises a light entrance surface and a light extraction surface opposite to the light entrance surface, is arranged between the light extraction surface of the light source and the light entrance surface of the light guide plate and fills a gap between the light extraction surface of the light source and the light entrance surface of the light guide plate; the light extraction surface of the light source is connected with the light entrance surface of the light conduction structure; the light extraction surface of the light conduction structure is connected with the light entrance surface of the light guide plate; and light emitted by the light source is diffused by the light extraction surface of the light guide plate. According to the invention, the design of a narrower border is realized; and meanwhile, a light mixing distance at the light entrance side is not changed, an effect of uniformly mixing light is still achieved under the condition of reducing the number of the LEDs, and light entrance coupling efficiency between the light source and the light guide plate of the backlight module is strengthened.

The invention discloses a photocureable silicon nitride ceramic paste and a preparation method thereof. According to the invention, stearic acid powder and a premixed solution are additionally used asraw materials on the basis of ceramic powder, wherein the premixed solution is composed of a plurality of substances. According to the invention, through addition of the stearic acid powder, the compatibility of the ceramic powder and subsequent resin can be improved, and the solid phase content of silicon nitride ceramic can be easily improved; through optimized selection of all substances in the premixed solution, resin with high refractive index can be introduced into a resin system to reduce the difference of refractive indexes of the ceramic powder and the resin, so the single-layer curing depth of a ceramic paste can be improved; in addition, rigid group containing epoxy resin, isobornyl methacrylate (IBOMA) and the like are added into the resin to reduce shrinkage generated in theprocess of curing; and through optimization of the varieties of all substances, the photocureable ceramic paste provided by the invention has the following advantages: the solid phase content and single-layer curing depth of the isobornyl methacrylate are improved, and the shrinkage amount of the paste photocured into ceramic is reduced.

The invention discloses a glass ceramics whispering gallery mode resonant cavity capable of outputting single mode high-performance laser and a preparation method thereof, and belongs to the field ofoptical devices. The method comprises the following steps: firstly mixing raw materials for preparing the glass resonant cavity with rear earth active ion raw materials sufficiently, then carrying outmelting and rod winding to obtain active fiberglass; drawing the active fiberglass to tapered fiber by melt extraction, and truncating the tapered fiber in the middle to obtain single taper fibers; melting the thin ends of the single taper fibers through a heating source, and forming a microsphere cavity by utilizing the action of surface tension; carrying out heat treatment or laser-induced treatment on the microsphere cavity to obtain a glass ceramics microsphere cavity, and carrying out coupling with the tapered fiber and packaging to obtain the glass ceramics whispering gallery mode resonant cavity. According to the invention, the preparation process is simple, the prepared glass ceramics microsphere cavity has relatively high quality factor, the influence on active ion gain propertyof amorphous state and relatively high phonon energy of glass is improved by the separation of microcrystal, and laser output with lower threshold value and higher slope efficiency can be realized.

The invention discloses a touch panel, comprising two transparent conducting films arranged oppositely and at least one refractivity matching layer arranged between the transparent conducting films.

The invention relates to a large-specification silica loose body production method, which belongs to the technical field of quartz glass production. According to the invention, polyalkysiloxane raw material liquid is gasified and is subjected to a reaction with flame spitted by a combustor to generate the silica particles, through movement of the combustor, decrease and rotation of a deposition base rod, the silica particles are continuously laminated and decomposed on a base target surface; and the large-specification silica loose body is prepared. The method solves the problem that diameter of an ash material produced by a traditional production technology is small, production of large-specification quartz glass column (ingot) cannot be satisfied, deposition efficiency is low, uniformity of the loosening body material is poor, ventilating of the structure is insufficient, and gas phase processing or sintering for severe influence of the uniformity of the quartz glass column (ingot) at anaphase in the traditional production technology can be solved, and the method can provides the guarantee for subsequent production of large-specification quartz glass ingot with high uniformity.

The invention discloses an Al2O3/SiON inactivation layer structure of an LED (light emitting diode) chip. The Al2O3/SiON inactivation layer structure of the LED chip comprises an n type semiconductor layer, a luminous layer, a p type semiconductor layer and an ITO conducting layer, which are sequentially grown on a substrate, wherein an n type electrode is arranged on the n type semiconductor layer, and a p type electrode is arranged on the ITO conducting layer. The Al2O3/SiON inactivation layer structure of the LED chip is characterized in that Al2O3 layers and SiON layers are sequentially deposited on the upper surface of the chip on the outer sides of the n type electrode and the p type electrode. The Al2O3/SiON inactivation layer structure of the LED chip is of a lamination structure. A growth method of the Al2O3/SiON inactivation layer structure of the LED chip is a two step method, and includes: step one, using a self-manufactured LP-MOCVD device special for growth of oxide material to grow an Al2O3 film through a metal organic chemical sedimentation method which obtains good growth compactness for Al2O3 film material, obtains high crystalline quality, and can control growth velocity of the Al2O3 film well; step two, using a PECVD device to grow SiON film material. The Al2O3 film layer and the SiON film layer of the Al2O3/SiON inactivation layer structure of the LED chip respectively develop functions of electrode inactivation and a function of improving luminous efficiency of an antireflection film.

The invention discloses an anti-reflection film, an optoelectronic device, and a manufacturing method for the optoelectronic device. According to the invention, the surface of an III-V battery or a film battery is provided with a big-cycle micro-nano structure, thereby achieving a purpose that incident light enter into a medium material in a dielectric micro-nano structure in a higher-order diffraction, further meeting a condition that a higher-order diffraction is greater than a critical angle, enabling higher-order diffraction light to further enter into a semiconductor layer material in a guided mode coupling manner till the light is completely absorbed, reducing the zero level diffraction component of the light, avoiding the reflection caused by multiple scattering, reducing the impact on the surface reflection of the whole structure from the high interface reflection between a dielectric micro-nano structure/semiconductor layer, and laying a surface foundation for the III-V battery and other film battery to absorb wide-spectrum high-efficiency sunlight. Moreover, the structure can achieve the passivation of the surface of a solar cell, and is compatible with the corresponding battery technology. Accordingly, the anti-reflection film is truly used for the III-V battery and the film solar cell, also can be used for a detector, and effectively improves the efficiency.

The invention provides wear-resistant ultraviolet curing silk printing snowflake printing ink. The wear-resistant ultraviolet curing silk printing snowflake printing ink comprises the following components: 60 to 65 parts of light curable resin, 3 to 6 parts of a photoinitator, 1 to 2 parts of a photosensitive accelerant, 3 to 10 parts of photosensitive nano-silicon dioxide, 0.3 to 0.5 part of a defoaming agent, 2 to 3 parts of a flatting agent, 0.1 to 0.2 part of a polymerization inhibitor and 8 to 25 parts of a viscosity regulating solvent, wherein the light curable resin comprises two or three of melamine acrylic resin, hydroxy acrylic resin, epoxy acrylate, polyketone resin and aldehyde resin; the photosensitive nano-silicon dioxide is silicon dioxide particle, of which the surface is modified by a light curable group, and the particle size of the silicon dioxide is 15 to 35 nm. The wear-resistant ultraviolet curing silk printing snowflake printing ink provided by the invention can effectively improve the wear resistance of the light cured snowflake printing ink and effectively maintain clear and transparent snowflake grains.

Disclosed is an efficient cooling large-mode-area mid-infrared photonic crystal optical fiber laser device. The efficient cooling large-mode-area mid-infrared photonic crystal optical fiber laser device is in a structural design of double-cladding photonic crystal fiber, wherein the internal cladding is fluoride glass; a fiber core is made of high erbium-doped fluoride glass and provided with a plurality of air holes, which are with a diameter of d and spaced at a pitch of lambda. According to the efficient cooling large-mode-area mid-infrared photonic crystal optical fiber laser device, by adjusting the structure of the air holes of the photonic crystal optical fiber, the refractive index difference between the fiber core and the inner cladding can be reduced, the mode field diameter of the optical fiber can be increased. The efficient cooling large-mode-area mid-infrared photonic crystal optical fiber laser device comprises an efficient cooling device, inert gas is fed into the air holes, the air holes can provide cooling channels to increase the specific surface area for cooling, so that heat generated inside the photonic crystal optical fiber, particularly inside the fiber core, can be rapidly guided out of the optical fiber. Therefore, the cooling problem of large-core-diameter fiber can be solved, and possibility for achieving hectowatt-scale 2.7 mm single-mode laser output can be obtained.

The invention relates to a semiconductor luminous element and a manufacturing method thereof. The semiconductor luminous element comprises a substrate, a p-type semiconductor layer formed on the substrate, a luminous layer formed on the p-type semiconductor layer, and an n-type semiconductor layer formed on the luminous layer; micron and nanometer columns which are numerously vertical to the substrate direction and have a depth of not less than 0.2 micron are formed on the surface of the n-type semiconductor layer. The nanometer columns are deepened to change the luminous field pattern of the semiconductor luminous element and improve the positive light emitting strength and the light emitting efficiency. The manufacturing method of the semiconductor luminous element comprises: forming the n-type semiconductor layer, the luminous layer and the p-type semiconductor layer on the first substrate through epitaxial wafers; providing a conductive substrate, reversing the epitaxial structure on the first substrate to lie on the conductive substrate, and exposing the surface of the n-type semiconductor layer; scattering numerous spherical particles on the surface of the n-type semiconductor layer, etching and shielding; etching the n-type semiconductor layer in the direction vertical to the conductive substrate, and forming numerous micron and nanometer columns with a depth of not less than 0.2 micron. Through the manufacturing method, relatively deep nanometer columns can be formed, and the positive light emitting strength can be improved.

The invention discloses a projection device. The projection device (400) comprises a projection screen (100) and a first lens mechanism (200), wherein the first lens mechanism (200) comprises a diffraction structure (210) and a refractive index compensation layer (220), the first lens mechanism (200) and the projection screen (100) are oppositely arranged, and the refractive index compensation layer (220) and the diffraction structure (210) are superposed in the light transmission direction of the first lens mechanism (200). According to the scheme, the problem that the wearing feeling of a user is poor due to the fact that the boundary dimension and the weight of the intelligent glasses are large can be solved. The invention further discloses intelligent glasses. The intelligent glasses comprise a glasses main body (500) and the projection device (400), the glasses main body (500) comprises glasses lenses (530), the glasses lenses (530) are opposite to the projection device (400), andlight projected by the projection screen (100) can be projected to the glasses lenses (530) after passing through the first lens mechanism (200).

The present invention provides a 795nm quantum well laser based on an AlGaAs/GaInP active region. The epitaxial structure comprises a substrate, a buffer layer, an N-type lower limit layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, and P-type upper limit layer and an ohmic contact layer from the bottom to the top. The upper waveguide layer and the lower waveguide layer are made of an aluminum-free material gallium indium phosphate, the quantum well layer is made of an aluminum gallium arsenide material, and a wide waveguide semi-aluminum-free active region is formed by the waveguide layers and the quantum well layer. According to the 795nm quantum well laser, the special requirements of a pump laser with the application of a small and simplified self-doubledlaser crystal can be satisfied, at the same time, the influence of the roughness of a growth interface and an episodic field at a cavity surface on the service and reliability of the laser can be reduced effectively by an optimized laser structure.