795nm quantum well laser based on AlGaAs/GaInP active region

Abstract

The present invention provides a 795nm quantum well laser based on an AlGaAs / GaInP active region. The epitaxial structure comprises a substrate, a buffer layer, an N-type lower limit layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, and P-type upper limit layer and an ohmic contact layer from the bottom to the top. The upper waveguide layer and the lower waveguide layer are made of an aluminum-free material gallium indium phosphate, the quantum well layer is made of an aluminum gallium arsenide material, and a wide waveguide semi-aluminum-free active region is formed by the waveguide layers and the quantum well layer. According to the 795nm quantum well laser, the special requirements of a pump laser with the application of a small and simplified self-doubledlaser crystal can be satisfied, at the same time, the influence of the roughness of a growth interface and an episodic field at a cavity surface on the service and reliability of the laser can be reduced effectively by an optimized laser structure.

Description

technical field

[0001] The invention relates to a high-efficiency and high-reliability 795nm strained quantum well laser, which belongs to the technical field of single quantum well semiconductor lasers. Background technique

[0002] In recent years, rainbow holography, fine laser spectroscopy, and laser medicine have shown a strong demand for green lasers and dual-wavelength lasers. All solid-state lasers play an irreplaceable role in fine spectroscopy, detection, and laser medicine due to their advantages such as compact structure, high peak power, and narrow half-width of wavelength. Commonly used solid-state lasers are generally realized by a combination of semiconductor laser pump source, laser crystal, and frequency-doubling crystal. When realizing visible light laser (such as 532nm) output, it is necessary to adjust the laser crystal and frequency-doubling crystal to achieve the closest match. The process is complex and requires high requirements. . At the same time...

Examples

Embodiment 1

[0050] A 795nm quantum well laser based on AlGaAs / GaInP active region, the structure is as follows figure 1 As shown, from bottom to top are substrate 1 , buffer layer 2 , lower confinement layer 3 , lower waveguide layer 4 , quantum well layer 5 , upper waveguide layer 6 , upper confinement layer 7 and ohmic contact layer 8 .

[0051] Substrate 1: used for epitaxial growth of materials of various layers of the laser thereon, the substrate is an N-type highly doped gallium arsenic material with the (100) plane offset to the (110) direction, and the off angle is 15°. The doping concentration of N-type highly doped gallium arsenic is 2E18cm -3 .

[0052] The buffer layer 2 is grown on the substrate 1 with a doping concentration of 2E18cm -3 N-type highly doped gallium arsenic material with a thickness of 300nm.

[0053] The lower confinement layer 3 is made of N-type aluminum gallium indium phosphide material, grown on the buffer layer 2, with a doping concentration of 5E17cm...

Embodiment 2

[0062] Embodiment 2: A kind of AlGaAs / GaInP active region 795nm quantum well laser

[0063] As described in Example 1, the difference is:

[0064] Substrate 1 is an N-type highly doped gallium arsenic material with the (100) plane offset to the (110) direction, the off angle is 12°, and the doping concentration of the N type highly doped gallium arsenic is 3E18cm -3 .

[0065] Buffer layer 2: The doping concentration of N-type highly doped GaAs material is 2E18cm -3 , thickness 350nm.

[0066] Lower confinement layer 3: doping concentration of N-type aluminum gallium indium phosphide material 7E17cm -3 , thickness 1.1 μm. The aluminum content of the lower limiting layer was 15%.

[0067] The thickness of the lower waveguide layer 4 is 500nm, and the gallium indium phosphide layer with a thickness of 250nm near the lower confinement layer 3 is N-type doped with a doping concentration of 2E17cm -3 .

[0068] Quantum well layer 5: the thickness of AlGaAs is 8nm. When work...

technical field

[0001] The invention relates to a high-efficiency and high-reliability 795nm strained quantum well laser, which belongs to the technical field of single quantum well semiconductor lasers. Background technique

[0002] In recent years, rainbow holography, fine laser spectroscopy, and laser medicine have shown a strong demand for green lasers and dual-wavelength lasers. All solid-state lasers play an irreplaceable role in fine spectroscopy, detection, and laser medicine due to their advantages such as compact structure, high peak power, and narrow half-width of wavelength. Commonly used solid-state lasers are generally realized by a combination of semiconductor laser pump source, laser crystal, and frequency-doubling crystal. When realizing visible light laser (such as 532nm) output, it is necessary to adjust the laser crystal and frequency-doubling crystal to achieve the closest match. The process is complex and requires high requirements. . At the same time...

Examples

Embodiment 1

[0050] A 795nm quantum well laser based on AlGaAs / GaInP active region, the structure is as follows figure 1 As shown, from bottom to top are substrate 1 , buffer layer 2 , lower confinement layer 3 , lower waveguide layer 4 , quantum well layer 5 , upper waveguide layer 6 , upper confinement layer 7 and ohmic contact layer 8 .

[0051] Substrate 1: used for epitaxial growth of materials of various layers of the laser thereon, the substrate is an N-type highly doped gallium arsenic material with the (100) plane offset to the (110) direction, and the off angle is 15°. The doping concentration of N-type highly doped gallium arsenic is 2E18cm -3 .

[0052] The buffer layer 2 is grown on the substrate 1 with a doping concentration of 2E18cm -3 N-type highly doped gallium arsenic material with a thickness of 300nm.

[0053] The lower confinement layer 3 is made of N-type aluminum gallium indium phosphide material, grown on the buffer layer 2, with a doping concentration of 5E17cm...

Embodiment 2

[0062] Embodiment 2: A kind of AlGaAs / GaInP active region 795nm quantum well laser

[0063] As described in Example 1, the difference is:

[0064] Substrate 1 is an N-type highly doped gallium arsenic material with the (100) plane offset to the (110) direction, the off angle is 12°, and the doping concentration of the N type highly doped gallium arsenic is 3E18cm -3 .

[0065] Buffer layer 2: The doping concentration of N-type highly doped GaAs material is 2E18cm -3 , thickness 350nm.

[0066] Lower confinement layer 3: doping concentration of N-type aluminum gallium indium phosphide material 7E17cm -3 , thickness 1.1 μm. The aluminum content of the lower limiting layer was 15%.

[0067] The thickness of the lower waveguide layer 4 is 500nm, and the gallium indium phosphide layer with a thickness of 250nm near the lower confinement layer 3 is N-type doped with a doping concentration of 2E17cm -3 .

[0068] Quantum well layer 5: the thickness of AlGaAs is 8nm. When work...

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