491 results about "Laser application" patented technology

An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. A first cleaved c-face facet is provided on one end of the laser stripe region, and a second cleaved c-face facet is provided on the other end of the laser stripe region.

An optical device capable of emitting light having a wavelength ranging from about 490 to about 580 nanometers has a gallium nitride substrate with a semipolar crystalline surface region characterized by an orientation of greater than 3 degrees from (11-22) towards (0001) but less than about 50 degrees. A laser stripe formed on the substrate has a cavity orientation substantially parallel to the m-direction.

An optical device having a structured active region configured for one or more selected wavelengths of light emissions of 500 nm and greater, but can be others.

An optical device has a structured active region configured for selected wavelengths of light emissions.

An optical device having a structured active region configured for one or more selected wavelengths of light emissions.

Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.

A double-longitudinal-mode laser heat frequency stabilization method and a device based on the iodine frequency stabilization reference light belong to the application technical field, the invention takes the center frequency of the iodine frequency stabilization laser with a relative frequency accuracy being 10<-11> as a reference frequency, and leads the frequency of laser output by multi-double-longitudinal-mode lasers to keep one fixed difference with the reference frequency through regulating cavity length, so that the relative frequency accuracy of the double-longitudinal-mode laser is improved from 10<-7>-10<-8> to 10<-9>, the frequency consistency of multi-double-longitudinal-mode lasers is improved from 10<-7> to 10<-9>, therefore, the problems that the relative frequency accuracy of the double-longitudinal-mode laser can not exceed 10<-8> and the frequency consistency of multi-double-longitudinal-mode lasers is poor are solved.

A dual-frequency laser ranging method and a device based on polarization state regulation and wavelength synthesis belong to the technical field of laser application. In absolute distance measurement and relative displacement measurement, the method adopts the same frequency stabilized laser as a measuring light source, realizes organic integration of absolute distance measurement and relative displacement dynamic measurement through the control of a polarization rotator and wavelength tuning of acoustooptic frequency shifters and simultaneously meets the requirements on extra long distance precise measurement and fast local displacement ultraprecise monitoring. The device comprises an acoustooptic frequency shifter A and an acoustooptic frequency shifter B, a reflecting mirror A and a reflecting mirror B, a frequency control unit A and a frequency control unit B, a polarization rotator, a polarization splitter B and a laser wavelength split and synthesis unit formed by partial optical splitters. The invention has the advantages of both extra long distance ultraprecise measurement capability and integral formation, etc.

An extreme ultra violet light source apparatus in which both a mechanism of supplying a droplet target to a laser application position at a high speed and a mechanism of trapping charged particles generated from plasma are managed without disturbing a track of the target. The apparatus includes: a target nozzle that injects a target material toward a plasma generation point; an electric charge supply unit that charges the injected target material; an acceleration unit that accelerates the charged target material; a laser oscillator that applies a laser beam to the target material at the plasma generation point to generate plasma; and electromagnets that form a magnetic field at the plasma generation point such that the magnetic field has substantially straight lines of magnetic flux in substantially parallel with a traveling direction of the target material in the track of the target material.

A double-longitudinal-mode laser frequency-offset-lock method and a device based on cavity length thermal regulation belong to the application technical field; the invention takes the frequency of laser output by a power balanced type double-longitudinal-mode frequency stabilization laser A as a reference frequency, and simultaneously leads the frequency of laser output by the double-longitudinal-mode laser A with n being more than or equal to B1, B2,..., Bn to keep one fixed difference with the reference frequency, thus ensuring that the laser output by the double-longitudinal-mode laser B1, B2,..., Bn has uniform frequency value, the frequency stability and frequency consistency of the double-longitudinal-mode laser can reach 10<-8>, thereby overcoming the shortcoming that the frequency consistency between frequency stabilization lasers only reaches 10<-6>-10<-7> in the traditional frequency stabilization lasers.

The invention relates to the field of laser application, and in particular relates to a Gauss laser beam shaping method and a Gauss laser beam shaping device and a precise laser micropore processing device. A beam expanding device, a shaping device, an initial focusing lens, a hole diaphragm, a collimation device, a light beam deflection device and a focusing lens are sequentially arranged along the light path, wherein the Gauss laser beam is shaped as a flat laser beam by the shaping device after being expanded through the beam expanding device, the flat laser beam is collimated by the collimation device after being intercepted by the hole diaphragm and initially focused by the initial focusing lens, a transmission direction of the flat laser beam is changed through the light beam deflection device, and then the flat laser beam is focused through the focusing lens to obtain the laser beam for micropore processing. The Gauss laser beam is output after being shaped as the flat laser beam, the utilization rate and the processing efficiency of the laser are improved, and the energy loss is reduced; meanwhile, when the flat laser beam obtained through the focusing of the focusing lens is used for micropore processing, the hole margin of each of a through hole and a blind hole is smooth, the taper of the hole is reduced, the bottom damage of the blind hole is avoided, and the blind hole with a flat bottom is obtained.

To provide an image processing method including at least one of an image recording step and an image erasing step, wherein (1) laser beams are swept in the same direction and laser scanning involves a period where laser application is discontinued, (2) laser beams are swept in alternating directions and the laser scanning involves a period where laser application is discontinued, (3) laser beams are swept in alternating directions and laser scanning involves a period where laser application is discontinued, wherein the period involves no laser beam application from first laser scanning end point to second laser scanning point, or (4) laser beams are applied in alternating directions while avoiding continuous laser irradiation of nearby portions between adjacent laser beam lines, and laser scanning involves a period where laser application is discontinued.

The invention discloses a device and a method for laser shot blasting reinforcement of a hard and brittle material, and relates to the field of mechanical manufacture of hard and brittle material processing and laser application. The device comprises a laser aid heating system, a laser shot blasting reinforcement system, a workpiece clamp system, a computer numerical control system, a measurement feedback system and a protective gas circulating system. The method comprises a laser aid heating stage and a laser shot blasting reinforcement stage, namely performing aid heating treatment on the area to be reinforced by adopting high-power continuous laser, wherein for most metal materials, the plastic performance is improved along with the rise of temperature; and after the temperature of the heating area reaches a predetermined heating temperature, implementing laser shot blasting reinforcement treatment by adopting high-power pulse laser. The device and the method can implement the laser shot blasting reinforcement on the hard and brittle material so as to broaden the application range of the laser shot blasting reinforcement technology, and meanwhile compound the advantages of continuous laser and pulse laser so as to broaden the application field and the application prospect of laser manufacture.

A method and apparatus for converting a Gaussian laser beam into a propagating far field diffraction pattern using an off-axis diffractive optic. This propagating far field pattern is focused by a lens to obtain a flattop intensity at the focal plane. The technique is based on the idea of Fourier transform pairs and produces a small spot diameter with a useable depth of field. A focused uniform intensity profile can be useful for many laser applications.

The invention relates to a method for processing a micro array on glass surface via femtosecond laser pulse sequence belonging to the technical field of femtosecond laser application. The method comprises the following steps: (1) modulating the conventional femtosecond laser into the femtosecond laser pulse sequence including two sub-pulses on a time domain via a pulse shaping method, wherein the time interval range of two sub-pulses is 50fs-2ps, and the energy ratio range of two sub-pulses is 0.2-5; (2) focusing the femtosecond laser pulse sequence on the surface of glass material, scanning the required micro array configuration pattern on the glass surface according to the relative movement between the glass material and the laser focal point; (3) immersing the glass material with micro array configuration pattern obtained in the step (2) in a hydrofluoric acid solution with the concentration being 1-10%, carrying out reaction on the micro array configuration pattern region and the hydrofluoric acid solution so as to from a concave micro array structure. The modification degree of the femtosecond laser irradiation region is increased and the etching efficiency of the irradiation region is finally improved.

The invention relates to a femtosecond laser-controlled silicon surface nanopillar preparation method based on dual-wavelength electronic dynamic control, and belongs to the technical field of femtosecond laser application. The method comprises the steps that on the basis of local instant electronic exciting dynamic control, the wave length of the fundamental frequency laser is converted into 400 nm from 800 nm through a frequency doubling technology, and the surface micro-nano structural morphology is controlled by adopting a dual-wavelength femtosecond laser, wherein a first beam generates a generic plasma lens structure (PL) on the surface of a material, a second beam generates surface plasma along the edge of the generic PL structure and generates a gradient field distributed along the center of a light spot, and then the material generates the force extruding towards the center under the action of the pulse to form a convex nanopillar structure; preparation of large-area uniform nanopillar arrays is achieved through control over a procedure of a processing platform. Compared with an existing method, the preparation method has the advantages that the nanopillar processing precision and processing efficiency are effectively improved, efficient and precise control over the crystalline silicon surface nano structure is achieved, and the application value on the aspects such as information storage and solar cells is achieved.

The invention relates to the field of laser application, in particular to a method for efficiently processing a high-quality micro hole with a large ratio of pit-depth to pit-diameter through a femtosecond laser. According to the method, the wavelength of a near-infrared femtosecond laser monopulse is regulated by a femtosecond laser optical parameter amplifier, so that the near-infrared femtosecond laser monopulse becomes visible light. Afterwards, an optical path of a Michelson interferometer is used for modulating the visible light to be laser double impulses and the overall energy of the laser double impulses is regulated with a continuous attenuation sheet. The obtained visible light double impulses penetrate through an optical shutter and are perpendicularly focused on the upper surface of a sample to be processed through an objective lens. Finally, the optical shutter is used for controlling the exposure time of the visible light double impulses and therefore the number of laser impulses which irradiates the surface of the sample to be processed is regulated until the depth of the processed hole is saturated. According to the processing method, the ratio of pit-depth to pit-diameter and the quality in processing the micro hole can be effectively improved.

The invention relates to methods of processing biological tissue using an ultrashort pulse (USP) laser. In one embodiment, the invention relates to a method of separating transverse layers or portions of a biological tissue using USP laser. In an alternative embodiment, the invention relates to a method of cutting biological tissue using USP laser. In another embodiment, the invention relates to a method of removing unwanted material from the surface of a biological tissue comprising application of the USP laser to the tissue surface.

A beam mixer for increasing intensity symmetry along a selected axis of a beam (wherein the beam extends from a first edge to a second edge along the axis) is disclosed and may include a plurality of mirrors establishing a spatially inverting path. For the beam mixer, the inverting path may have a beginning and an end and may be characterized in that a part of the beam near the first beam edge at the beginning of the path translates to the second beam edge at the end of the path. For this aspect, the beam mixer may further include an optic dividing the beam into first and second beam portions, the optic placing the first portion onto the inverting path and recombining the first and second portions onto a common path after the first portion has traveled along the inverting path thereby mixing the beam.

The invention relates to a method for improving the machining efficiency of micro-channel preparation through femtosecond laser, which belongs to the technical field of femtosecond laser application. The method includes the steps: firstly, generating the femtosecond pulse laser by the aid of a femtosecond laser system, adjusting energy by means of combination of a half wave plate and a polarizing film and modulating the femtosecond laser into femtosecond interval pulse sequence by the aid of a pulse shaper; secondly, reflecting the pulse sequence laser obtained in the first step to an objective lens for focusing through a reflector, realizing imaging by the aid of a CCD (charge coupled device) and a lighting source, moving a six-dimensional precision electric control platform and positioning a laser focus on the lower surface of a sample horizontally placed on the six-dimensional precision electric control platform; and thirdly, controlling the six-dimensional precision electric control platform to move along a laser propagation direction by the aid of a computer to machine a micro-channel on the sample. As the femtosecond laser is modulated into the femtosecond interval pulse sequence by the aid of the pulse shaper, the micro-channel preparation efficiency is improved. Moreover, introduction of a vibration source is omitted, so that controllability of precision machining cannot be reduced.

The invention relates to a femtosecond laser array micropore machining system based on spatial beam shaping and belongs to the technical field of laser application. According to the machining system provided by the invention, a spatial light modulator (SLM) is utilized, by designing different phase positions, a single femtosecond laser beam is shaped into a plurality of array light fields featuring specific spatial distribution, the laser repeat frequency, the laser beam waist radius and the laser pulse energy are adjusted, finally, a light path is established through optical elements so as to focalize the shaped femtosecond laser to the surface of a sample, high-quality, no-contact, high-efficiency and large-area array micropore machining on multiple types of materials is achieved, and the repeatability and flexibility are high. When the system is applied to array micropore machining, beam splitting nonuniformity caused by Gaussian distribution of the laser is effectively avoided, and the array micropore uniformity and quality are improved. The quantity and distribution of array micropores can be freely adjusted and controlled through SLM load phase position variations, multiple types of elements do not need to be configured, and adjustability is high.

The invention discloses a system and method for preparing a patterned metal thin layer through pulse laser-induced forward transfer, and belongs to the technical field of laser application and printing electronics. The system comprises a laser light source, a light path adjusting system and a two-dimensional precise motion system, wherein the laser light source is connected with the light path adjusting system; the two-dimensional precise motion system is located below the light path adjusting system; the laser light source is a pulse laser device; the light path adjusting system comprises a collimating beam expander lens assembly and a light splitting element connected with the collimating beam expander lens assembly; the light splitting element is connected with two reflectors at 90 degrees separately; the two reflectors are connected with a beam combiner separately; the beam combiner is connected with an objective lens through a focusing lens; the two-dimensional precise motion system comprises an electric platform, a motion controller and a computer; the computer is connected with an electric platform through the motion controller; and the electric platform is used for putting an initial substrate and a receiving substrate. Fast, high-precision and large-format pattern transfer can be achieved, the manufacturing cost is greatly reduced and the manufacturing cycle is greatly shortened.

A disclosed marking control device controls a marking device to mark a target image on a thermoreversible recording medium by applying a laser beam includes a marking position determination unit dividing the image into plural marking lines, and determining their marking positions; a marking order determination unit determining a marking order to mark the marking lines in mutually opposite directions; an adjusting unit adjusting a distance between a first ending point and a second starting point to be longer than a distance between a first starting point and a second ending point, or adjusting laser power applied to a second starting point side of the second marking line to be lower than the laser power applied to a second ending point side of the second marking line; and a marking instruction generator unit generating marking instructions including the marking positions of the marking lines and the marking order thereof.

The invention relates to a method for efficiently and controllably processing a large-area silicon micro-nano structure. The method belongs to the technical field of femtosecond laser application. The method for efficiently and controllably processing the large-area silicon micro-nano structure provided by the invention effectively utilizes the processing characteristics of an ultrafast characteristic, an ultrastrong characteristic and an ultraprecise characteristic of femtosecond laser for efficiently and controllably processing the large-area silicon micro-nano structure within a shorter time on the basis of a chemical etching-assisted femtosecond laser processing and flight time punching method; and is concretely characterized in that a local modification area is formed on a silicon surface under the action of a single laser pulse, and the chemical activity of a laser irradiation area is declined sharply, so that a mask effect can be achieved during a follow-up chemical etching process, and the processing of the maskless high-efficient and high-quality silicon micro-nano structure is further realized. Compared with the prior art, according to the method provided by the invention, a step of plating a mask layer on the surface of a processing material is omitted, so that the cost is reduced, meanwhile, the processing efficiency is improved, the method is further convenient to operate and control, and precise and controllable processing of the large-area silicon micro-nano structures under different morphologies and sizes is realized; and the processing speed is only limited by laser pulse repetition frequency.