High-strain semiconductor structure and preparation method thereof

Abstract

The invention provides a high-strain semiconductor structure and a preparation method thereof, and in a composite active layer of the high-strain semiconductor structure, the indium content in a first component gradient layer is smaller than the indium content in a quantum well layer and larger than the indium content in a first barrier layer. The indium content in the second component gradient layer is smaller than the indium content in the quantum well layer and larger than the indium content in the second barrier layer; the indium component content in a plurality of first sub-gradient layers in the first component gradient layer meets a progressive increase area of a Gaussian function along with the increase of the number of the first sub-gradient layers, and the indium component content in a plurality of second sub-gradient layers in the second component gradient layer meets a progressive decrease area of the Gaussian function along with the increase of the number of the second sub-gradient layers; the content of indium in the first stress compensation layer and the second stress compensation layer is zero; and the quantum well layer, the first component gradient layer and the second component gradient layer are used for laser light. The process difficulty and complexity of the high-strain semiconductor structure are reduced, and the growth quality is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a high-strain semiconductor structure and a preparation method thereof. Background technique [0002] A light-emitting semiconductor device is a device that produces stimulated emission with a certain semiconductor material as a working substance. Its working principle is: through a certain excitation method, between the energy band (conduction band and valence band) of the semiconductor material, or Between the energy band of the material and the energy level of the impurity (acceptor or donor), the particle number inversion of the non-equilibrium carrier is realized. When a large number of electrons and holes in the particle number inversion state recombine, stimulated emission occurs Because of its small size and high electro-optical conversion efficiency, light-emitting semiconductor devices are widely used. [0003] In recent years, with the demand for laser radar in...

AI Technical Summary

Problems solved by technology

At present, some special epitaxy methods must be used for this problem, including: 1) Growth of low-dimensional materials, including quantum wires and quantum dots, but the growth process is more complicated, and the uniformity of epitaxy is also difficult to control, making it difficult to achieve commercial growth. 2) Using quaternary compounds, including adding N or Gb or B to InGaAs, quaternary compounds increase the difficulty of material growth, and at the same time, the quality of material growth also drops sharply, affecting device performance

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