Anti-reflection film, optoelectronic device, and manufacturing method for optoelectronic device

A technology of optoelectronic devices and anti-reflection coatings, applied in photovoltaic power generation, electrical components, semiconductor devices, etc., can solve the problems of narrow anti-reflection band, surface non-radiative recombination, and difficult preparation, so as to avoid reflection, improve efficiency, and manufacture The effect of simple process

Inactive Publication Date: 2016-02-10
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a surface passivation anti-reflection film, an optoelectronic device and its manufacturing method, which can solve the technical problems in the prior art such as high reflectivity, narrow anti-reflection band, difficult preparation, serious surface non-radiative recombination, etc.

Method used

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  • Anti-reflection film, optoelectronic device, and manufacturing method for optoelectronic device
  • Anti-reflection film, optoelectronic device, and manufacturing method for optoelectronic device
  • Anti-reflection film, optoelectronic device, and manufacturing method for optoelectronic device

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Embodiment 1

[0036] ginseng Figure 1a As shown, the optoelectronic device includes a semiconductor base layer 1 and a surface passivation antireflection layer 2 formed on the semiconductor base layer 1 .

[0037]The semiconductor base layer 1 can be a complete solar cell or a photoelectric conversion layer of a detector. For thin-film Si-based solar cells and other thin-film batteries, it includes the entire PN junction, that is, semiconductor materials such as the emitter layer and the base layer; for III-V batteries, this part includes the complete PN junction of each junction cell and the intermediate tunnel. The piercing junction also includes the window layer on the top layer, in short, this part includes all semiconductor layers used to absorb light.

[0038] The preparation method of the semiconductor base layer 1: for Si-based thin-film batteries, PECVD (plasma enhanced chemical vapor deposition method) is generally used; for organic batteries, spin-coating method is used; for CuI...

Embodiment 2

[0047] Figure 4 and Figure 5 The reflectance curves of SiN deposited on the surface of GaAs and the formation of micro-nano structures are given respectively ( Figure 4 ) and comparative analysis results of diffraction angle and critical angle under various periods ( Figure 5 ), the results also prove that adjusting the dielectric film and its micro-nano structure on the surface of III-V semiconductors can effectively reduce the incidence of III-V semiconductors when the high-order diffraction angle of the incident light is satisfied and the high-order diffraction angle is less than the critical angle of total reflection. surface reflection.

Embodiment 3

[0049] ginseng Image 6 As shown, the optoelectronic device includes a semiconductor base layer 10 and an antireflection layer 20 formed on the semiconductor base layer 10 .

[0050] The semiconductor base layer 10 may be a complete solar cell or a photoelectric conversion layer of a detector. For thin-film Si-based solar cells and other thin-film batteries, it includes the entire PN junction, that is, semiconductor materials such as the emitter layer and the base layer; for III-V batteries, this part includes the complete PN junction of each junction cell and the intermediate tunnel. The piercing junction also includes the window layer on the top layer, in short, this part includes all semiconductor layers used to absorb light.

[0051] The preparation method of the semiconductor base layer 10: for Si-based thin-film batteries, it is generally prepared by PECVD (Plasma Enhanced Chemical Vapor Deposition); for organic batteries, the spin coating method is used; for CuInGaSe, ...

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Abstract

The invention discloses an anti-reflection film, an optoelectronic device, and a manufacturing method for the optoelectronic device. According to the invention, the surface of an III-V battery or a film battery is provided with a big-cycle micro-nano structure, thereby achieving a purpose that incident light enter into a medium material in a dielectric micro-nano structure in a higher-order diffraction, further meeting a condition that a higher-order diffraction is greater than a critical angle, enabling higher-order diffraction light to further enter into a semiconductor layer material in a guided mode coupling manner till the light is completely absorbed, reducing the zero level diffraction component of the light, avoiding the reflection caused by multiple scattering, reducing the impact on the surface reflection of the whole structure from the high interface reflection between a dielectric micro-nano structure/semiconductor layer, and laying a surface foundation for the III-V battery and other film battery to absorb wide-spectrum high-efficiency sunlight. Moreover, the structure can achieve the passivation of the surface of a solar cell, and is compatible with the corresponding battery technology. Accordingly, the anti-reflection film is truly used for the III-V battery and the film solar cell, also can be used for a detector, and effectively improves the efficiency.

Description

technical field [0001] This application mainly relates to a surface passivation antireflection film, in particular to an omnidirectional antireflection and surface passivation for optoelectronic devices. Background technique [0002] For Si-based thin-film batteries: the high refractive index makes its surface reflection one of the main sources of light loss; the absorber layer of the battery is too thin, on the one hand, the absorber itself cannot and is not suitable to be prepared into a micro-nano structure. Anti-reaction; on the other hand, there is also a serious problem of insufficient absorption. In addition, in order to reduce the shading ratio, usually Si-based thin-film cells directly deposit transparent conductive oxide (TCO). At present, the TCO process is only a trade-off between the conductivity and transmission properties of TCO, and the surface reflectance is only passively brought by it. Undoubtedly, purely thin-film TCO can only reduce reflection according...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/04H01L31/20H01L31/055H01L31/08
CPCY02E10/52Y02P70/50
Inventor 张瑞英
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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