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206results about How to "Translucent" patented technology

Rare earth-mixing high strength lithium bisilicate sitall material and preparation method thereof

The invention relates to a rare earth-mixing high strength lithium bisilicate sitall material and a preparation method thereof. Parent glass of the invention includes the following components according to molar percentage: 61.2 to 66.0 percent of SiO2, 0 to 2.5 percent of B2O3, 0 to 1.6 percent of Al2O3, 1.0 to 3.7 percent of P2O5, 0 to 2.3 percent of ZrO2, 1.0 to 1.8 percent of K2O, 24.2 to 31.8 percent of Li2O, 0 to 2.0 percent of MgO, 0 to 2.0 percent of CaO, and 0.5 to 4.2 percent of La2O3+Y2O3. A corresponding raw material prepared from the oxidates is processed by the steps of ball milling, 80 mesh sieve sieving and uniform mixing to obtain a batch; the batch is led into a copple to be melted after the temperature from 1480 to 1520 DEG C is maintained for 2 to 3 hours, and the melted batch is cast into a stainless steel mould to be molded and then is annealed at 500 DEG C for 0.5 hour; and the step of coring is carried out in a resistance furnace at the temperature from 500 to 550 DEG C for 1 hour, and the step of crystallization is carried out at the temperature from 600 to 850 DEG C for 2 hours. The crystallization degree of the sitall is as high as 60 to 70 percent, the flexural strength is 100 MPa or more higher than the sitall to which the rare earth oxides are not added, the highest flexural strength reaches 334 MPa, the maximum elastic modulus reaches 143 GPa, and the highest fracture toughness reaches 3.34 MPa-m. The sitall of the invention has favorable stability, and the heat treatment temperature is lower and is easy to control.
Owner:CENT SOUTH UNIV

Device and method for synthesizing ammonia through photoelectrocatalysis nitrogen fixation

The invention provides a device and a method for synthesizing ammonia through photoelectrocatalysis nitrogen fixation and relates to the technical field of electro-catalysis electrolysis. The device for synthesizing ammonia through photoelectrocatalysis nitrogen fixation comprises a photoelectric composite membrane, wherein the photoelectric composite membrane consists of a bipolar membrane and anano nitrogen fixation catalysis membrane and is used for dividing an anode chamber and a cathode chamber into a double-chamber electrolytic bath; the bipolar membrane comprises an anion exchange membrane and a cation exchange membrane; the nano nitrogen fixation catalysis membrane is carried on the surface of the cation exchange membrane; an electrolyte solution is put into the anode chamber; thecathode chamber is filled with nitrogen; a BiVO4 or Pt electrode is adopted as an anode; a nitrogen fixation catalyst membrane is used as a cathode; a container filled with dilute sulfuric acid is arranged in the cathode chamber and is used for absorbing generated ammonia gas; a xenon lamp is adopted as a light source; an external direct-current power supply is adopted to provide electric field force; a positive pole and a negative pole of the external direct-current power supply are respectively connected with the anode and the cathode. The device is adopted for photoelectrocatalysis nitrogen fixation in a non-water solution, and has benefits that hydrogen evolution side reactions can be effectively inhibited, and the photoelectrocatalysis nitrogen fixation efficiency can be improved.
Owner:TAIYUAN NORMAL UNIV

Workmanship of indoor microscopic oil displacement model

The invention relates to workmanship of a microscopic oil displacement model used in oilfield chemistry and acid fracturing laboratories to simulate a medium-low permeable oil deposit so as to study the oil displacement process. The invention adopts the technical scheme that the workmanship includes the steps: polishing, washing and blow-drying a glass substrate and then roasting the glass substrate on a glue baking plate; spin coating a layer of tackifier on the glass substrate and then baking on the glue baking plate, so as to form a nano-film; spin coating a layer of photoresist, and baking on the glue baking plate; converting an oil deposit picture into a black and white picture, importing the picture into photoetching software, exposing the glass substrate and then developing in developing liquid, washing, blow-drying, and baking on the glue baking plate; sealing the unexposed part of the glass substrate through paraffin wax, rusting in corrosive liquid, washing, then boiling in sulfuric acid and hydrogen peroxide, washing and blow-drying; tightly pressing the glass substrate to a mica sheet ,and sintering in a muffle furnace; and finally, grinding an access passageway, and putting capillary tubes into the access passageway to make a microscopic oil displacement model for studying the oil displacement process.
Owner:SOUTHWEST PETROLEUM UNIV

Silicone resin composite material containing nano-ZnO quantum dots and preparation method and application thereof

The invention relates to a silicone resin composite material containing nano-ZnO quantum dots, which is a nanometer composite material consisting of colorless and transparent silicone resin in a visible light area and nano-ZnO quantum dot granules dispersed in the silicone resin evenly. The ratio in weight portion of the silicon resin to the nano-ZnO quantum dot granules is 0.1-10:99.9-90. The preparation method comprises the following steps: firstly preparing the nano-ZnO quantum dot granules, and dispersing the nano-ZnO quantum dot granules into acetone so as to prepare acetone solution of the nano-ZnO quantum dot granules; and secondly, adding corresponding acetone solution of the nano-ZnO quantum dot granules according to the ZnO content in the composite material into the silicone resin, after evenly mixing the mixture, extracting solvent, and injecting the solvent into a mould so as to prepare the silicone resin composite material containing the nano-ZnO quantum dots through curing and forming. The composite material has the excellent light transmittance and luminous performance, and is suitable for the surface encapsulation of photoelectric devices, LED solid lighting devicesor outdoor neon lamps.
Owner:TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI

WMT solar cell module and preparation method thereof

The invention discloses a WMT solar cell module. The WMT solar cell module is formed by upper layer glass, a first hot melt adhesive film layer, a MWT solar cell string, a conductive adhesive layer, a second hot melt adhesive film layer, a conductive foil layer and lower layer glass in a sealing mode, wherein the upper layer glass, the first hot melt adhesive film layer, the MWT solar cell string, the conductive adhesive layer, the second hot melt adhesive film layer, the conductive foil layer and the lower layer glass are sequentially stacked. The pattern of the conductive foil layer is matched with the pattern of the electrode at the back side of the MWT solar cell string. A hole is formed in the position, corresponding to the conductive foil layer, of the second hot melt adhesive film layer, and the conductive foil layer is enabled to be capable of being contacted with the electrode at the back side of the MWT solar cell string. The conductive adhesive layer is arranged between the conductive foil layer and the electrode at the back side of the MWT solar cell string. The invention further discloses a preparation method of the MWT solar cell module. A two-layer-glass structure is adopted, and the glass has good functions of being moisture-resisting, ageing-resisting, ultraviolet-resisting, and not prone to be ageing. Compared with a rear panel of conventional molecular materials, the WMT solar cell module is very good in weather resistance, and therefore the service life of the module can be prolonged.
Owner:CECEP SOLAR ENERGY TECH (ZHENJIANG) CO LTD

Touch electrode structure and touch screen

The invention provides a touch screen and a touch electrode structure thereof, and relates to the technical field of touch. In order to solve the problems that the touch screen is poor in static tolerance, and static breakdown easily happens, the touch electrode structure comprises a substrate with the light-permeable performance. A plurality of first electrodes and a plurality of second electrodes are arranged on one face of the substrate. Each first electrode comprises a plurality of first electrode units. Each second electrode comprises a plurality of second electrode units. Every two adjacent first electrode units are connected with each other through a strip-shaped connection portion. Every two adjacent second electrode units are connected with each other through a strip-shaped bridge connection portion. All the connection portions have electrical conductivity, and the connection portions are the same as the first electrodes in material. The connection portions intersect with the bridge connection portions. Insulation layers with the light-permeable performance are arranged at the intersections and located between the connection portions and the bridge connection portions, and the connection portions are covered with the insulation layers. The width of the intersections between the connection portions and the first electrode units is larger than that of the intersections between the second electrode units and the bridge connection portions located on the second electrode units.
Owner:BEIJING BOE OPTOELECTRONCIS TECH CO LTD

Foldable screen and electronic device

The invention relates to a foldable screen and an electronic device. The electronic device has a folding state and an unfolding state, and comprises a rotating shaft assembly, a supporting assembly, aflexible display screen and a cover plate, wherein the supporting assembly comprises a first supporting plate and a second supporting plate which are connected to the rotating shaft assembly, and thefirst supporting plate and the second supporting plate can rotate relative to the rotating shaft assembly to be switched between the folding state and the unfolding state; the flexible display screenis laid on the rotating shaft assembly and the first and second supporting plates, and the two ends of the flexible display screen are connected with the first supporting plate and the second supporting plate respectively; the cover plate has a light transmission property and is attached to one surface, back to the supporting assembly, of the flexible display screen; and the cover plate can be bent or unfolded along with the flexible display screen. The flexible display screen is clamped among the cover plate and the rotating shaft assembly, the first supporting plate and the second supporting plate to prevent the flexible display screen from being wrinkled so as to ensure the flatness of the flexible display screen. The cover plate can absorb external impact energy to prevent the flexible display screen from being damaged.
Owner:GUANGDONG OPPO MOBILE TELECOMM CORP LTD

Semiconductor light emitting element and method for fabricating the same

ActiveCN101369618ATranslucentAdjust the far-field luminescence patternSemiconductor devicesSemiconductorEpiwafer
The invention relates to a semiconductor luminous element and a manufacturing method thereof. The semiconductor luminous element comprises a substrate, a p-type semiconductor layer formed on the substrate, a luminous layer formed on the p-type semiconductor layer, and an n-type semiconductor layer formed on the luminous layer; micron and nanometer columns which are numerously vertical to the substrate direction and have a depth of not less than 0.2 micron are formed on the surface of the n-type semiconductor layer. The nanometer columns are deepened to change the luminous field pattern of the semiconductor luminous element and improve the positive light emitting strength and the light emitting efficiency. The manufacturing method of the semiconductor luminous element comprises: forming the n-type semiconductor layer, the luminous layer and the p-type semiconductor layer on the first substrate through epitaxial wafers; providing a conductive substrate, reversing the epitaxial structure on the first substrate to lie on the conductive substrate, and exposing the surface of the n-type semiconductor layer; scattering numerous spherical particles on the surface of the n-type semiconductor layer, etching and shielding; etching the n-type semiconductor layer in the direction vertical to the conductive substrate, and forming numerous micron and nanometer columns with a depth of not less than 0.2 micron. Through the manufacturing method, relatively deep nanometer columns can be formed, and the positive light emitting strength can be improved.
Owner:LITE ON TECH CORP +1
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