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Chip bonding film, chip bonding film with cutting disk, semiconductor device, and manufacturing method for semiconductor device

A technology for chip bonding and dicing, which is used in the manufacture of semiconductor/solid-state devices, semiconductor devices, and thin-film/sheet-like adhesives. The effect of high light transmittance

Active Publication Date: 2015-09-30
NITTO DENKO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method is difficult to achieve the homogenization of the slurry adhesive layer, and the application of the slurry adhesive requires special equipment or a long time.

Method used

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  • Chip bonding film, chip bonding film with cutting disk, semiconductor device, and manufacturing method for semiconductor device
  • Chip bonding film, chip bonding film with cutting disk, semiconductor device, and manufacturing method for semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0184] The following (a) to (c) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.

[0185] (a) Acrylate copolymer (manufactured by Nagase Chemical Industry Co., Ltd., product name: SG-P3) with ethyl acrylate, butyl acrylate and acrylonitrile as main monomers, content of each main monomer: ethyl acrylate 30% by weight, butyl acrylate 39% by weight, acrylonitrile 28% by weight)

[0186] 100 copies

[0187] (b) Epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name: YX-8034 (alicyclic epoxy resin))

[0188] 26 copies

[0189] (c) Acid anhydride (manufactured by Shin Nippon Rika Co., Ltd., product name: MH-700 (alicyclic acid anhydride))

[0190] 24 copies

[0191] This adhesive composition solution was applied to a release-treated film (release liner) formed of a polyethylene terephthalate film having a thickness of 38 μm after silicone release treatment, and dried at 130° C. for 2 day...

Embodiment 2

[0193] The following (a) to (b) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.

[0194] (a) Acrylate copolymer (manufactured by Nagase Chemical Industry Co., Ltd., product name: SG-P3) with ethyl acrylate, butyl acrylate and acrylonitrile as main monomers, content of each main monomer: ethyl acrylate 30% by weight, butyl acrylate 39% by weight, acrylonitrile 28% by weight)

[0195] 100 copies

[0196] (b) Acid anhydride (manufactured by Shin Nippon Rika Co., Ltd., product name: MH-700 (alicyclic acid anhydride))

[0197] 10 copies

[0198] This adhesive composition solution was applied to a release-treated film (release liner) formed of a polyethylene terephthalate film having a thickness of 38 μm after silicone release treatment, and dried at 130° C. for 2 days. minute. Thus, a die-bonding film B having a thickness of 20 μm was produced.

Embodiment 3

[0200] The following (a) to (c) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.

[0201] (a) Acrylate copolymer (manufactured by Nagase Chemical Industry Co., Ltd., trade name: SG-700AS) with butyl acrylate and acrylonitrile as main monomers, content of each main monomer: 38% by weight of ethyl acrylate, Butyl acrylate 40% by weight, acrylonitrile 17% by weight)

[0202] 100 copies

[0203] (b) Epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name: YX-8034 (alicyclic epoxy resin))

[0204] 14 copies

[0205] (c) Silica filler (manufactured by Admatechs, product name: SO-E2)

[0206] 15 copies

[0207] This adhesive composition solution was applied to a release-treated film (release liner) formed of a polyethylene terephthalate film having a thickness of 38 μm after silicone release treatment, and dried at 130° C. for 2 days. minute. Thus, a die-bonding film C having a thickness...

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Abstract

Provided are a chip bonding film, a chip bonding film with a cutting disk, a semiconductor device, and a manufacturing method for the semiconductor device. The invention provides a chip bonding film which can easily determine fragments of a semiconductor chip. The chip bonding film is characterized in that when light transmittance in wavelength of 400 nm before thermofixation is set to be T1(%) and light transmittance in wavelength of 400 nm after the film is heated for one hour in 120 DEG C is set to be T2(%), T1 is more than 80%, and the difference (T1-T2) of T1 and T2 is lower than 20%.

Description

technical field [0001] The present invention relates to a die-bonding film, a die-bonding film with a dicing sheet, a semiconductor device, and a method for manufacturing the semiconductor device. Background technique [0002] Conventionally, in the manufacturing process of a semiconductor device, a silver paste is used when a semiconductor chip is fixed to an adherend such as a lead frame. The fixing process is performed by applying a paste-like adhesive to pads of the lead frame, etc., mounting a semiconductor chip thereon, and curing the paste-like adhesive layer. [0003] However, the paste-like adhesive has large variations in the amount of application or application shape due to its viscosity behavior, deterioration, and the like. As a result, the thickness of the formed paste-like adhesive is not uniform, and thus the reliability of the attachment strength of the semiconductor chip is insufficient. For example, if the application amount of the paste-like adhesive is...

Claims

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Application Information

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IPC IPC(8): C09J7/02C09J133/08C09J163/00H01L21/683
CPCH01L2224/48091H01L2224/73265H01L2924/181H01L2924/00012H01L2924/00014
Inventor 大西谦司三隅贞仁村田修平宍户雄一郎木村雄大
Owner NITTO DENKO CORP
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