Chip bonding film, chip bonding film with cutting disk, semiconductor device, and manufacturing method for semiconductor device

A technology for chip bonding and dicing, which is used in the manufacture of semiconductor/solid-state devices, semiconductor devices, and thin-film/sheet-like adhesives. The effect of high light transmittance

Active Publication Date: 2015-09-30
NITTO DENKO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method is difficult to achieve the homogenization of the slurry adhesive la

Method used

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  • Chip bonding film, chip bonding film with cutting disk, semiconductor device, and manufacturing method for semiconductor device
  • Chip bonding film, chip bonding film with cutting disk, semiconductor device, and manufacturing method for semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0184] The following (a) to (c) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.

[0185] (a) Acrylate copolymer (manufactured by Nagase Chemical Industry Co., Ltd., product name: SG-P3) with ethyl acrylate, butyl acrylate and acrylonitrile as main monomers, content of each main monomer: ethyl acrylate 30% by weight, butyl acrylate 39% by weight, acrylonitrile 28% by weight)

[0186] 100 copies

[0187] (b) Epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name: YX-8034 (alicyclic epoxy resin))

[0188] 26 copies

[0189] (c) Acid anhydride (manufactured by Shin Nippon Rika Co., Ltd., product name: MH-700 (alicyclic acid anhydride))

[0190] 24 copies

[0191] This adhesive composition solution was applied to a release-treated film (release liner) formed of a polyethylene terephthalate film having a thickness of 38 μm after silicone release treatment, and dried at 130° C. for 2 day...

Embodiment 2

[0193] The following (a) to (b) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.

[0194] (a) Acrylate copolymer (manufactured by Nagase Chemical Industry Co., Ltd., product name: SG-P3) with ethyl acrylate, butyl acrylate and acrylonitrile as main monomers, content of each main monomer: ethyl acrylate 30% by weight, butyl acrylate 39% by weight, acrylonitrile 28% by weight)

[0195] 100 copies

[0196] (b) Acid anhydride (manufactured by Shin Nippon Rika Co., Ltd., product name: MH-700 (alicyclic acid anhydride))

[0197] 10 copies

[0198] This adhesive composition solution was applied to a release-treated film (release liner) formed of a polyethylene terephthalate film having a thickness of 38 μm after silicone release treatment, and dried at 130° C. for 2 days. minute. Thus, a die-bonding film B having a thickness of 20 μm was produced.

Embodiment 3

[0200] The following (a) to (c) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.

[0201] (a) Acrylate copolymer (manufactured by Nagase Chemical Industry Co., Ltd., trade name: SG-700AS) with butyl acrylate and acrylonitrile as main monomers, content of each main monomer: 38% by weight of ethyl acrylate, Butyl acrylate 40% by weight, acrylonitrile 17% by weight)

[0202] 100 copies

[0203] (b) Epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name: YX-8034 (alicyclic epoxy resin))

[0204] 14 copies

[0205] (c) Silica filler (manufactured by Admatechs, product name: SO-E2)

[0206] 15 copies

[0207] This adhesive composition solution was applied to a release-treated film (release liner) formed of a polyethylene terephthalate film having a thickness of 38 μm after silicone release treatment, and dried at 130° C. for 2 days. minute. Thus, a die-bonding film C having a thickness...

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Abstract

Provided are a chip bonding film, a chip bonding film with a cutting disk, a semiconductor device, and a manufacturing method for the semiconductor device. The invention provides a chip bonding film which can easily determine fragments of a semiconductor chip. The chip bonding film is characterized in that when light transmittance in wavelength of 400 nm before thermofixation is set to be T1(%) and light transmittance in wavelength of 400 nm after the film is heated for one hour in 120 DEG C is set to be T2(%), T1 is more than 80%, and the difference (T1-T2) of T1 and T2 is lower than 20%.

Description

technical field [0001] The present invention relates to a die-bonding film, a die-bonding film with a dicing sheet, a semiconductor device, and a method for manufacturing the semiconductor device. Background technique [0002] Conventionally, in the manufacturing process of a semiconductor device, a silver paste is used when a semiconductor chip is fixed to an adherend such as a lead frame. The fixing process is performed by applying a paste-like adhesive to pads of the lead frame, etc., mounting a semiconductor chip thereon, and curing the paste-like adhesive layer. [0003] However, the paste-like adhesive has large variations in the amount of application or application shape due to its viscosity behavior, deterioration, and the like. As a result, the thickness of the formed paste-like adhesive is not uniform, and thus the reliability of the attachment strength of the semiconductor chip is insufficient. For example, if the application amount of the paste-like adhesive is...

Claims

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Application Information

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IPC IPC(8): C09J7/02C09J133/08C09J163/00H01L21/683
CPCH01L2224/48091H01L2224/73265H01L2924/181H01L2924/00012H01L2924/00014
Inventor 大西谦司三隅贞仁村田修平宍户雄一郎木村雄大
Owner NITTO DENKO CORP
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