Semiconductor light emitting element and method for fabricating the same

A technology of light-emitting elements and manufacturing methods, which is applied to semiconductor devices, electrical components, circuits, etc., and can solve problems such as high manufacturing costs, inconvenience, and limited practicability

Active Publication Date: 2009-02-18
LITE ON TECH CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, epitaxial formation of nanopillars still requires high manufacturing costs and its practicality is still limited
[0006] It can be seen that the above-mentioned existing semiconductor light-emitting element and its manufacturing method obviously still have inconvenience and defects in product structure, manufacturing method and use, and need to be further improved urg

Method used

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  • Semiconductor light emitting element and method for fabricating the same
  • Semiconductor light emitting element and method for fabricating the same
  • Semiconductor light emitting element and method for fabricating the same

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0050]

[0051] Formation of semiconductor layered structure

[0052] See figure 1 What is shown is a schematic diagram illustrating the structure and manufacturing process of Embodiment 1 of the semiconductor light-emitting element and manufacturing method of the present invention. Using metal organic vapor phase epitaxy (MOVPE, Metal Organic Vapor Phase Epitaxy), an n-type semiconductor layer 12 of n-type GaN is sequentially formed on an aluminum oxide substrate 11 (sapphire substrate) with a diameter of two inches and a thickness of 500 μm. The light-emitting layer 13 (ten pairs of InGaN / GaN multilayer quantum well structure) and the p-type GaN p-type semiconductor layer 14. Then an electron beam evaporation system is used to deposit an indium tin oxide (ITO) transparent electrode material with a thickness of about 200 nm on the p-type semiconductor layer 14 as the current diffusion layer 15, and then an aluminum metal layer with a thickness of about 500 nm is deposited on...

Example Embodiment

[0060]

[0061]The implementation steps of Example 2 are roughly the same as those of Example 1, but the etching time is extended to five minutes in the etching process of forming the nano-pillars, so that the etching depth is about 1000nm, so that the length in the direction perpendicular to the substrate is about 1000nm. Nano cylinders.

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Abstract

The invention relates to a semiconductor luminous element and a manufacturing method thereof. The semiconductor luminous element comprises a substrate, a p-type semiconductor layer formed on the substrate, a luminous layer formed on the p-type semiconductor layer, and an n-type semiconductor layer formed on the luminous layer; micron and nanometer columns which are numerously vertical to the substrate direction and have a depth of not less than 0.2 micron are formed on the surface of the n-type semiconductor layer. The nanometer columns are deepened to change the luminous field pattern of the semiconductor luminous element and improve the positive light emitting strength and the light emitting efficiency. The manufacturing method of the semiconductor luminous element comprises: forming the n-type semiconductor layer, the luminous layer and the p-type semiconductor layer on the first substrate through epitaxial wafers; providing a conductive substrate, reversing the epitaxial structure on the first substrate to lie on the conductive substrate, and exposing the surface of the n-type semiconductor layer; scattering numerous spherical particles on the surface of the n-type semiconductor layer, etching and shielding; etching the n-type semiconductor layer in the direction vertical to the conductive substrate, and forming numerous micron and nanometer columns with a depth of not less than 0.2 micron. Through the manufacturing method, relatively deep nanometer columns can be formed, and the positive light emitting strength can be improved.

Description

technical field [0001] The invention relates to a semiconductor light-emitting element and a manufacturing method thereof, in particular to a semiconductor light-emitting element that can change the light-emitting field type, thereby improving the forward light intensity and luminous efficiency of the semiconductor light-emitting element, and reducing the increase in the refractive index difference at the light-emitting interface. A semiconductor light-emitting element and a manufacturing method thereof that have light extraction efficiency and can improve element reliability. Background technique [0002] The luminous efficiency of semiconductor light-emitting devices needs to consider both internal quantum efficiency and light extraction efficiency. With the continuous progress of semiconductor epitaxy technology, the internal quantum efficiency of semiconductor light-emitting elements can reach a level close to 80%. However, due to the influence of the material or struct...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/44
Inventor 邱清华黄泓文郭浩中卢廷昌王兴宗赖志铭
Owner LITE ON TECH CORP
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