Large-specification silica loose body production method

A technology of silica and production method, which is applied in glass forming, glass manufacturing equipment, manufacturing tools, etc., can solve the problems of insufficient air permeability of the structure, small diameter of the soot body, poor uniformity of the soot body material, etc., to solve the diameter limitation sexual effect

Active Publication Date: 2017-07-04
HUBEI FEILIHUA QUARTZ GLASS
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0003] The purpose of the present invention is to provide a simple and practical procedure to solve the problem that the soot body produced by the traditional production process has a small diameter and cannot meet the production of large-scale quartz glass columns (ingots), and the deposition efficiency is low and the soot body material is uniform. Poor performance and insufficient air permeability of the structure will seriously affect the gas-phase treatment or sintering of the uniformity of the quartz glass ingot in the later stage, so as to prepare for the subsequent production of high-uniform large-scale quartz glass ingots. The production method of large-scale silica loose body

Method used

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Effect test

Embodiment 1

[0029] First, the octamethylcyclotetrasiloxane raw material solution is injected into the raw material tank; and the octamethylcyclotetrasiloxane raw material solution in the raw material tank is passed through N under 0.1MPa pressure condition 2 Transported to the evaporator; at the same time, the temperature of the evaporation tube of the evaporator is stably controlled at 150°C, and the evaporation temperature is controlled at 150°C, so as to vaporize the octamethylcyclotetrasiloxane raw material liquid transported to the evaporator.

[0030] While gasifying the octamethylcyclotetrasiloxane raw material liquid, raise the basic target surface with a diameter greater than 1100 mm, adjust the distance between the burner and the target surface within 250 mm, and control the furnace temperature of the deposition furnace at 200 °C range; when the temperature of the target surface reaches 850 °C, the vaporized octamethylcyclotetrasiloxane raw material liquid is gas-transmitted to t...

Embodiment 2

[0033] First, the dodecamethylcyclohexasiloxane raw material liquid is injected into the raw material tank; and the dodecamethylcyclohexasiloxane raw material liquid in the raw material tank is passed through N under 0.2MPa pressure condition 2 Transported to the evaporator; at the same time, the temperature of the evaporation tube of the evaporator is stably controlled at 180°C, and the evaporation temperature is controlled at 170°C, so that the dodecamethylcyclohexasiloxane raw material liquid transported to the evaporator is vaporized.

[0034] While gasifying the dodecamethylcyclohexasiloxane raw material liquid, raise the basic target surface with a diameter greater than 1100 mm, adjust the distance between the burner and the target surface within 350 mm, and control the furnace temperature of the deposition furnace at the same time 350°C range; when the temperature of the target surface reaches 1000°C, under the condition of 2000g / h, the vaporized dodecamethylcyclohexasil...

Embodiment 3

[0037] First, the hexadecylmethylcyclohexasiloxane raw material solution is injected into the raw material tank; and the hexadecylmethylcyclopentasiloxane raw material solution in the raw material tank is passed through N under the pressure condition of 0.25MPa 2 Transported to the evaporator; at the same time, the temperature of the evaporation tube of the evaporator was stably controlled at 200°C, and the evaporation temperature was controlled at 190°C, so as to vaporize the hexadecylmethylcyclopentasiloxane raw material liquid transported to the evaporator.

[0038] While gasifying the raw material liquid of hexadecylmethylcyclopentasiloxane, raise the basic target surface with a diameter greater than 1100mm, adjust the distance between the burner and the target surface within 400mm, and control the furnace temperature of the deposition furnace at the same time 500°C range; when the temperature of the target surface reaches 1200°C, under the condition of 3000g / h, the vaporiz...

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Abstract

The invention relates to a large-specification silica loose body production method, which belongs to the technical field of quartz glass production. According to the invention, polyalkysiloxane raw material liquid is gasified and is subjected to a reaction with flame spitted by a combustor to generate the silica particles, through movement of the combustor, decrease and rotation of a deposition base rod, the silica particles are continuously laminated and decomposed on a base target surface; and the large-specification silica loose body is prepared. The method solves the problem that diameter of an ash material produced by a traditional production technology is small, production of large-specification quartz glass column (ingot) cannot be satisfied, deposition efficiency is low, uniformity of the loosening body material is poor, ventilating of the structure is insufficient, and gas phase processing or sintering for severe influence of the uniformity of the quartz glass column (ingot) at anaphase in the traditional production technology can be solved, and the method can provides the guarantee for subsequent production of large-specification quartz glass ingot with high uniformity.

Description

technical field [0001] The invention relates to a production method of a large-scale silicon dioxide loose body, belonging to the technical field of quartz glass production. Background technique [0002] As a method for producing synthetic quartz glass, a method of hydrolyzing silicon dioxide obtained by a flame of a silicon halide at a high temperature is mainly known. However, the synthetic quartz glass obtained by this method contains a large amount of OH groups in silicon dioxide due to the flame hydrolysis step. In addition, there are a lot of OH groups in the synthetic quartz glass, which will reduce the viscosity and heat resistance of the synthetic quartz glass. Therefore, the quartz glass jig used in the semiconductor industry above 1000 ° C will be deformed, which cannot meet the production needs. On the other hand, with the traditional production process, the diameter of the soot body produced is small, which cannot meet the production of large-scale quartz glass...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03B20/00C03B8/04
CPCC03B20/00
Inventor 黄若杰张国君刘志龙张寒周轶吴学民商春利
Owner HUBEI FEILIHUA QUARTZ GLASS
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