The invention provides a manufacturing method of a P-type single crystal PERC battery capable of improving a LeTID phenomenon. The manufacturing method comprises the following steps of S1, surface texturing, S2, high-temperature phosphorus diffusion, S3, etching the periphery and polishing the back surface, S4, preparing a front silicon dioxide layer and a back silicon dioxide layer, S5, preparinga back aluminum oxide layer, S6, preparing a back silicon carbonitride layer, S7, preparing a back silicon oxynitride laminated layer, S8, preparing a front silicon oxynitride layer, S9, conducting laser grooving on the back face, and S10, preparing a front electrode and a back electrode. The hydrogen source is reduced by changing the structure of the battery film layer, the manufacturing raw materials and the corresponding process optimization method, redundant hydrogen atoms in the solar battery piece are reduced, and the technical effect of improving the LeTID phenomenon of the solar battery is achieved.