Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of quantum dot patterned film and patterned film

A patterned film and quantum dot technology, which is applied in the field of quantum dot luminescence, can solve the problems of quantum dot destruction, quantum dot destruction, and template method with high template requirements, and achieve the effects of chemical corrosion resistance, easy operation and high stability

Pending Publication Date: 2020-08-04
ZHIJING NANOTECH CO LTD
View PDF11 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The template method has high requirements on the template, and the processing of the template is expensive; the photolithography method has many manufacturing processes, and the quantum dots are often damaged during the process; laser direct writing will destroy the quantum dots on the one hand, and on the other hand, it is difficult to form high-efficiency luminescence and stable quantum dot pattern

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of quantum dot patterned film and patterned film
  • Preparation method of quantum dot patterned film and patterned film
  • Preparation method of quantum dot patterned film and patterned film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0173] a) 1gPAN was dissolved in 10gDMF as solution S1, 1mmolPbBr 2 , 2mmolMABr was dissolved in 10gDMF as solution S2;

[0174] b) Transfer S1 to a glass substrate for spin coating and evaporate to dryness into a film layer with a thickness of 10 μm;

[0175] c) According to the pre-set pixelation pattern, the prepared solution S2 is transferred drop by drop to a specific position of the film layer by inkjet printing. The diameter of the nozzle hole of the printer is 35 μm, and then dried, and the place where the solution S2 drops forms a disk Shaped luminescent dots with a diameter of 150 μm have obvious green fluorescence under ultraviolet light, forming perovskite quantum dots and embedded in polymers. Denoted as sample 1#.

Embodiment 2

[0177] a) 1gPAN was dissolved in 10gDMF as solution S1, 1mmolPbBr 2 , 2mmolMABr, 0.1gPAN were dissolved in 10gDMF as solution S2;

[0178] b) Transfer S1 to a glass substrate for spin coating and evaporate to dryness into a film layer with a thickness of 10 μm;

[0179] c) According to the pre-set pixelation pattern, transfer the prepared solution S2 drop by drop to a specific position of the film layer by inkjet printing. The diameter of the nozzle hole of the printer is 21.5 μm, and then dry it. Disc-shaped light-emitting dots with a diameter of 100 μm have obvious green fluorescence under ultraviolet light, forming perovskite quantum dots and embedding them in polymers. Compared with Example 1, due to the addition of a small amount of PAN in solution S2, the viscosity Adjusted to 5cps, the ink output is more stable during the printing process, which is recorded as sample 2#.

Embodiment 3

[0181] a) 1gPAN was dissolved in 10gDMF as solution S1, 1mmolPbBr 2 , 2mmolMABr, 0.8gPAN were dissolved in 10gDMF as solution S2;

[0182] b) Transfer S1 to a glass substrate for spin coating and evaporate to dryness into a film layer with a thickness of 10 μm;

[0183] c) According to the pre-set pixelation pattern, the prepared solution S2 is transferred drop by drop to a specific position of the film layer by inkjet printing. The diameter of the nozzle hole of the printer is 10 μm, and then dried, and the place where the solution S2 drops forms a disk Shaped luminescent dots with a diameter of 50 μm have obvious green fluorescence under ultraviolet light, forming perovskite quantum dots and embedded in polymers. Denoted as sample 3#.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a quantum dot patterned film. The preparation method at least comprises the following steps: (1) obtaining a film forming solution S1; (2) obtaining a solution S2 for patterning; (3) obtaining a film prepared from the film forming solution S1 on a substrate; (4) transferring the solution S2 to the pixel sites of the film in the step (3) to obtain thequantum dot patterned film, wherein the solution S2 contains a patterned solute, the patterned solute comprising at least one of quantum dots and a perovskite quantum dot precursor. The method is easy and convenient to operate, low in cost and suitable for industrial production, large-area quantum dot patterning can be achieved, and the patterned film prepared through the method can effectively isolate water and oxygen, is resistant to chemical corrosion and has high stability.

Description

technical field [0001] The application relates to a method for preparing a quantum dot patterned thin film and the patterned thin film, which belong to the field of quantum dot luminescence technology. Background technique [0002] Quantum dots are a kind of nanomaterials with good luminous properties: narrow half-peak width, adjustable luminous wavelength, high luminous efficiency, and have unique application value in lighting, display, laser, photodetector, light filtering and other fields. [0003] Applying patterning technology to quantum dots can further optimize the performance of optoelectronic devices based on quantum dots, thereby enhancing their commercial competitiveness. The patterning technology of quantum dots has great potential in future LED displays, flexible devices, detection and device integration. great potential. So far, a series of patterning methods have been reported, common ones are stencil method, photolithography method, laser direct writing and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/50H01L27/15
CPCH01L33/508H01L33/502H01L27/156H01L2933/0041
Inventor 施立甫钟海政刘瑞扩孟令海江峰
Owner ZHIJING NANOTECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com