Silicon oxide passivation PERC double-sided battery and preparation method thereof

A double-sided battery and silicon oxide technology, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of increasing battery manufacturing costs, not conforming to the development trend of cost reduction in the photovoltaic industry, grid parity, and poor anti-PID performance

Pending Publication Date: 2021-05-07
江苏润阳世纪光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This kind of film layer structure with aluminum oxide on the back and silicon nitride has poor anti-PID performance, and requires special POE materials for packaging on the component side.
However, the EVA packaging process on the front is different from the POE packaging process on the back, and the two are not compatible.
At present, in order to solve the PID problem of PERC double-sided cells on both sides, the module side is mostly packaged with POE on both sides, which increases the cost of battery manufacturing and does not conform to the development trend of the photovoltaic industry to reduce costs and achieve grid parity.

Method used

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  • Silicon oxide passivation PERC double-sided battery and preparation method thereof

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Embodiment 1

[0031] A silicon oxide passivated PERC double-sided cell, comprising a silicon substrate 1, a front dielectric layer 2 deposited on the front side of the silicon substrate 1, a first dielectric layer 3 deposited on the back side of the silicon substrate 1 and The second dielectric layer 4 deposited on the first dielectric layer 3; the front dielectric layer 2 includes a silicon dioxide layer and a silicon nitride layer; the first dielectric layer 3 is oxynitride Silicon layer, and the thickness of silicon oxynitride layer is 15nm; Described second dielectric layer 4 comprises two layers of silicon nitride layers, and the comprehensive thickness of two layers of silicon nitride layers is 90nm; The first layer of silicon nitride layer The thickness is 40nm, and the thickness of the second silicon nitride layer is 50nm.

[0032] The preparation method of the silicon oxide passivated PERC double-sided battery of the above-mentioned embodiment 1 includes the following specific step...

Embodiment 2

[0043] A silicon oxide passivated PERC double-sided cell, comprising a silicon substrate 1, a front dielectric layer 2 deposited on the front side of the silicon substrate 1, a first dielectric layer 3 deposited on the back side of the silicon substrate 1 and The second dielectric layer 4 deposited on the first dielectric layer 3; the front dielectric layer 2 includes a silicon dioxide layer and a silicon nitride layer; the first dielectric layer 3 is oxynitride Silicon layer, and the thickness of silicon oxynitride layer is 30nm; Described second dielectric layer 4 comprises two layers of silicon nitride layers, and the comprehensive thickness of two layers of silicon nitride layers is 110nm; The first layer of silicon nitride layer The thickness is 50nm, and the thickness of the second silicon nitride layer is 60nm.

[0044] The preparation method of the silicon oxide passivated PERC double-sided battery of the above-mentioned embodiment 2 includes the following specific ste...

Embodiment 3

[0055] A silicon oxide passivated PERC double-sided cell, comprising a silicon substrate 1, a front dielectric layer 2 deposited on the front side of the silicon substrate 1, a first dielectric layer 3 deposited on the back side of the silicon substrate 1 and The second dielectric layer 4 deposited on the first dielectric layer 3; the front dielectric layer 2 includes a silicon dioxide layer and a silicon nitride layer; the first dielectric layer 3 is silicon oxide layer, and the thickness of the silicon oxide layer is 20nm; the second dielectric layer 4 is two silicon nitride layers, and the combined thickness of the two silicon nitride layers is 80nm, the thickness of the first silicon nitride layer is 40nm; the thickness of the second silicon nitride layer is 40nm.

[0056] The preparation method of the silicon oxide passivated PERC double-sided battery of the above-mentioned embodiment 3 includes the following specific steps:

[0057] S1. Pre-cleaning and texturing of the...

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Abstract

The invention discloses a silicon oxide passivation PERC double-sided battery and a preparation method thereof. The silicon oxide passivation PERC double-sided battery comprises a silicon substrate, a front dielectric layer arranged on the front surface of the silicon substrate, and a first dielectric layer and a second dielectric layer which are sequentially arranged on the back surface, wherein the front dielectric layer comprises a silicon dioxide layer and a silicon nitride layer; the first dielectric layer is a silicon oxide layer or a silicon oxynitride layer; the second dielectric layer comprises at least one silicon nitride layer; the thickness of the first dielectric layer is 10-100 nm; and the thickness of the second dielectric layer is 60-180 nm. The preparation method comprises the steps of S1, pre-cleaning and texturing the surface of the silicon substrate; S2, preparing a P-N junction through phosphorus diffusion; S3, etching the edge of the silicon substrate and polishing the back surface; S4, preparing a silicon dioxide layer in the front dielectric layer; S5, preparing a silicon nitride layer in the front dielectric layer; S6, preparing a first dielectric layer on the back surface; S7, preparing a second dielectric layer on the back surface; S8, performing laser grooving on the back surface; and S9, preparing an electrode. According to the silicon oxide passivation PERC double-sided battery, a conventional aluminum oxide passivation PERC battery is replaced, the manufacturing cost of a product can be effectively reduced while the efficiency is guaranteed, and cost reduction of the battery end is greatly achieved.

Description

technical field [0001] The invention relates to the technical field of solar cell production and manufacturing, in particular to a silicon oxide passivated PERC double-sided cell and a preparation method thereof. Background technique [0002] At present, the main goal of solar cell development is to reduce the cost and improve the photoelectric conversion efficiency. The front and back of the PERC double-sided cell are both light-receiving surfaces, which can achieve double-sided power generation, and ultimately increase the power output per unit area. However, the double-sided battery also has the problem of PID (Potential induce degradation, which is called potential induced degradation). PID usually refers to the phenomenon that the battery module is under long-term high-voltage operation, leakage occurs between the cover glass packaging material and the frame, and the passivation effect of the battery sheet surface becomes poor, which eventually leads to the performance...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/042H01L31/18
CPCH01L31/02168H01L31/042H01L31/1868Y02E10/50Y02P70/50
Inventor 刘银生乐雄英陆祥
Owner 江苏润阳世纪光伏科技有限公司
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