Method for making silica film on surface of quartz substrate

Abstract

The invention discloses a method for making a silica film on the surface of a quartz substrate. The method comprises the following steps: placing the quartz substrate on an objective table, carrying out an oxyhydrogen-flame high-temperature hydrolysis reaction to allow a lower cladding, a core layer and an upper cladding to respectively sequentially grow on the surface of the quartz substrate, selectively introducing SiCl4, H2, O2, GeCl4, BCl3 and POCl3 gases by an oxyhydrogen lance during the growth of each of the above layers, controlling the introduction amount of each of the above gases, the temperature of the objective table and the growth speed of each of the layers to obtain different thicknesses of the lower cladding, the core layer and the upper cladding, and respectively annealing the layers in a vacuum rapid annealing furnace under a controlled heating and cooling speed and controlled heat insulation time to obtain the silica film on the surface of the quartz substrate. The method overcomes the defects of traditional making methods, realizes the adjustability of the refractive index of the silica film, avoids the precipitation of silica crystals in the annealing process, and improves the film making efficiency and the film quality.

Description

technical field [0001] The invention relates to a method for preparing a silicon dioxide film on the surface of a quartz substrate. Background technique [0002] Silicon dioxide film has high hardness, good wear resistance, good heat insulation, high light transmittance, strong corrosion resistance and good dielectric properties, and has been widely used in many fields, such as electronic integrated devices, thin film materials , Optical communication devices, etc. In optical communication devices, it is mainly used as a planar optical waveguide material. [0003] Planar optical waveguide technology is a new type of integrated optical technology that has emerged in the last ten years. It has the characteristics of simple design, compatibility with existing integrated circuit technology, high integration, and large output. It has been widely used in passive optical devices. Such as arrayed waveguide gratings, optical splitters, star couplers, etc. There are also many mater...

AI Technical Summary

Problems solved by technology

At present, the methods used for the preparation of silicon dioxide films mainly include chemical vapor deposition, thermal oxidation, sputtering and sol-gel methods, etc. Among them, the film quality of chemical vapor deposition is relatively dense, the film is thinner, and the stress is larger. , multiple annealing is required; the thermal oxidation method is too slow and cannot be prepared on a quartz substrate; the sputtering method has poor controllability and poor film quality; the sol-gel method is cumbersome to operate, and the adjustable range of the refractive index is small. easy to crack

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