P-type single crystal PERC battery and manufacturing method thereof

A production method and battery technology, which is applied to circuits, photovoltaic power generation, electrical components, etc., can solve the problems that do not conform to the development trend of cost reduction and efficiency improvement in the photovoltaic industry, the decline in the efficiency of batteries and components, and the excess hydrogen atoms of cells, etc., to achieve reduction The content of excess hydrogen atoms, the reduction of production cost, and the effect of reducing excess hydrogen atoms

Active Publication Date: 2019-10-29
JETION SOLAR HLDG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The more excess hydrogen, the worse the attenuation, resulting in lower cell and module efficiencies
In order to improve this problem, there are currently two research directions: one is to use low-defect high-quality silicon wafers, but this will lead to a substantial increase in manufacturing costs, which is not in line with the development trend of cost reduction and efficiency improvement in the photovoltaic industry; However, the current battery manufacturing process cannot reduce the hydrogen content, because when depositing SiNx films on the front and AlOx / SiNx stacked films on the back by PECVD, a large amount of hydrogen sources will be introduced, which will eventually lead to the battery Excess hydrogen atoms appear in the film, resulting in serious LeTID phenomenon

Method used

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  • P-type single crystal PERC battery and manufacturing method thereof
  • P-type single crystal PERC battery and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0035] Step S1, surface texture, also known as alkali texturing, is to use alkali solution to corrode the silicon wafer substrate 4, and form a pyramid-shaped surface morphology on the surface of the silicon wafer substrate 4, wherein, the reaction alkali solution: 1.2wt% NaOH, reaction time: 400s, temperature: 80°C, reflectance after treatment: 11%;

[0036] Step S2, phosphorus diffusion, wherein, nitrogen flow rate: 700sccm, oxygen flow rate: 800sccm, reaction time: 88min, temperature: 800°C, diffusion resistance: 120 ohms; and laser doping method to form a heavily doped region in the front electrode 1 area, Square resistance: 95 ohms;

[0037] Step S3, peripheral etching and back polishing, using 49% HF acid solution to etch the back and edge of the silicon wafer diffused in step S2, and then using 45% KOH and polishing additives to polish the back of the silicon wafer Processing, weight reduction: 0.25g, back reflectivity: 42%;

[0038] Step S4, preparation of the alumin...

Embodiment 2

[0045] Step S1, surface texture, also known as alkali texturing, is to use alkali solution to corrode the silicon wafer substrate 4, and form a pyramid-shaped surface morphology on the surface of the silicon wafer substrate 4, wherein, the reaction alkali solution: 1.2wt% NaOH, reaction time: 400s, temperature: 80°C, reflectance after treatment: 11%;

[0046] Step S2, phosphorus diffusion, wherein, nitrogen flow rate: 700sccm, oxygen flow rate: 800sccm, reaction time: 88min, temperature: 800°C, diffusion resistance: 120 ohms; and laser doping method to form a heavily doped region in the front electrode 1 area, Square resistance: 95 ohms;

[0047] Step S3, peripheral etching and back polishing, using 49% HF acid solution to etch the back and edge of the silicon wafer diffused in step S2, and then using 45% KOH and polishing additives to polish the back of the silicon wafer Processing, weight reduction: 0.25g, back reflectivity: 42%;

[0048] Step S4, preparation of the alumin...

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Abstract

The invention provides a P-type single crystal PERC battery and a manufacturing method thereof. The method comprises the steps that S1 surface texture, S2 high temperature phosphorus diffusion, S3 peripheral etching and backside polishing, S4 back oxidation aluminum layer preparation, S5 silicon dioxide layer preparation, S6 silicon oxynitride layer preparation, S7 backside laser grooving and S8 preparation of front and back electrodes. According to the invention, under the premise that the passivation effect is ensured, hydrogen sources are reduced through change of the battery film structure, raw material producing and corresponding process optimization methods; excess hydrogen atoms in a solar cell are reduced; and the solar cell LeTID is improved.

Description

technical field [0001] The invention relates to a solar cell and a manufacturing method thereof, in particular to a P-type single crystal PERC cell and a manufacturing method thereof, and belongs to the technical field of solar cell manufacturing. Background technique [0002] In recent years, the mainstream product in the photovoltaic industry is boron-doped P-type monocrystalline PERC (Passivated Emmiter and Rear Cell, also known as passivated emitter and rear cell) solar cells, but this mainstream product has different degrees of light-induced degradation (LID, Light Induced Degradation) and light heat attenuation (LeTID, Light and elevatedTemperature Induced Degradation) phenomenon. Photoinduced attenuation and photothermal attenuation refer to the obvious efficiency attenuation phenomenon of PERC cells under certain high temperature and light conditions, which seriously affects the power generation of solar cells. At present, the industry mainly uses various process op...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216H01L31/068
CPCH01L31/02167H01L31/02168H01L31/0682H01L31/1804Y02E10/547Y02P70/50
Inventor 康海涛郭万武吴中亚
Owner JETION SOLAR HLDG
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