Surface low-temperature passivation method for solar battery
A solar cell and low-temperature technology, applied in circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problems of difficult access to the medium, damage to the original structure of the solar cell, and inability to completely cover the surface of the cell, and achieve the adjustment of the refractive index, The effect of avoiding destruction
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[0030] Example 1:
[0031] Put the prepared prototype sample of the nano-surface silicon solar cell with nano-structure 6 into the autoclave, and pass pure oxygen at 20 atmospheres into the autoclave. 2 ; Then heat the sealed autoclave to 400°C, at this time the pressure of the reactor increases to 4.3×106 Pa, and the sample is heated continuously for 25 minutes under this condition.
[0032] Such as figure 1 The sample after the passivation of this method is shown using the screen printing method to prepare the metal bottom electrode 1 and the metal top electrode 4. The solar cell efficiency test system is used to test the nano-surface silicon solar cells before and after passivation, and the test results It shows that the efficiency of nano-surface silicon solar cells increases from 10.6% without passivation to 12.2% after passivation, and the short-circuit current and fill factor are significantly improved. I-V reference measured by efficiency test system figure 2 , Reference ...
Example Embodiment
[0033] Example 2:
[0034] The prototype sample of the prepared nano-surface silicon solar cell with nano-structure 6 is placed in the high-pressure reactor; 40 atmospheres of pure oxygen O2 at 400℃ is continuously introduced to the air inlet of the sealed reactor to adjust the reaction The gas output from the outlet of the kettle keeps the internal pressure of the reactor at 40 atmospheres; the internal temperature of the reactor is maintained at 400°C; the sample is heated continuously for 25 minutes under this condition. The test results show that the efficiency of nano-surface silicon solar cells increases from 10.6% without passivation to 12.1% after passivation, and the short-circuit current and fill factor are significantly improved. I-V reference measured by efficiency test system figure 2 , Reference for quantum efficiency test before and after passivation image 3 .
[0035]
Example Embodiment
[0036] Example 3:
[0037] Put the prepared prototype sample of the nano-surface silicon solar cell with nano-structure 6 into the autoclave, and add 1 ml of water into the reactor;
[0038] Pour 10 atmospheres of pure oxygen O into the autoclave 2 ; Then heat the sealed autoclave to 300 ℃, at this time the pressure of the reactor increases and is controlled at 4.0×106 Pa, and the sample is heated continuously for 25 minutes under this condition.
[0039] The test results show that the efficiency of nano-surface silicon solar cells increases from 10.6% without passivation to 12.8% after passivation, and the short-circuit current and fill factor are significantly improved. I-V reference measured by efficiency test system figure 2 , Reference for quantum efficiency test before and after passivation image 3 .
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