P-type single crystal PERC battery capable of improving LeTID phenomenon and manufacturing method thereof

A production method and single crystal technology, applied in sustainable manufacturing/processing, circuits, photovoltaic power generation, etc., can solve the problems that do not conform to the development trend of cost reduction and efficiency improvement in the photovoltaic industry, the decline in the efficiency of batteries and modules, and excess hydrogen atoms in batteries, etc. Problems, to achieve good field passivation effect, reduce the amount of use, reduce the effect of excess hydrogen atom content

Active Publication Date: 2020-04-17

JETION SOLAR HLDG

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AI-Extracted Technical Summary

Problems solved by technology

The more excess hydrogen, the worse the attenuation, resulting in lower cell and module efficiencies

In order to improve this problem, there are currently two research directions: one is to use low-defect high-quality silicon wafers, but this will lead to a substantial increase in manufacturing costs, which is not in line with the development trend of cost reduction and efficiency improvement...

Abstract

The invention provides a manufacturing method of a P-type single crystal PERC battery capable of improving a LeTID phenomenon. The manufacturing method comprises the following steps of S1, surface texturing, S2, high-temperature phosphorus diffusion, S3, etching the periphery and polishing the back surface, S4, preparing a front silicon dioxide layer and a back silicon dioxide layer, S5, preparinga back aluminum oxide layer, S6, preparing a back silicon carbonitride layer, S7, preparing a back silicon oxynitride laminated layer, S8, preparing a front silicon oxynitride layer, S9, conducting laser grooving on the back face, and S10, preparing a front electrode and a back electrode. The hydrogen source is reduced by changing the structure of the battery film layer, the manufacturing raw materials and the corresponding process optimization method, redundant hydrogen atoms in the solar battery piece are reduced, and the technical effect of improving the LeTID phenomenon of the solar battery is achieved.

Application Domain

Final product manufacturePhotovoltaic energy generation +1

Technology Topic

PhysicsSilicon oxide +11

Image

Examples

Experimental program(2)
Effect test(1)

Example Embodiment

[0032] Example 1

[0033] Step S1, surface texture, also called alkali texturing, that is, the silicon wafer substrate 4 is etched with an alkaline solution, and the surface of the silicon wafer substrate 4 is etched to form a pyramidal surface morphology, wherein the reaction alkali solution: 1.2wt% NaOH, reaction time: 400s, temperature: 80°C, reflectivity after treatment: 11%;

[0034] Step S2, high-temperature phosphorus diffusion, the diffusion source phosphorus oxychloride is brought into the high-temperature diffusion furnace with nitrogen through a constant temperature liquid source bottle, and at the same time sufficient oxygen is introduced, after the reaction, phosphorus atoms diffuse into the P-type silicon wafer , Forming an N-type impurity distribution to obtain a PN junction, where nitrogen flow rate: 700 sccm, oxygen flow rate: 800 sccm, reaction time: 88 min, temperature: 800 ℃, diffusion resistance: 120 ohm; laser doping method is formed in the front electrode area In the heavily doped area, the square resistance is 95 ohms;

[0035] Step S3, peripheral etching and back polishing, using 49% HF acid solution to etch the back and edges of the silicon wafer diffused in step 2, and then using 45% KOH and polishing additives to polish the back of the silicon wafer Treatment, weight loss: 0.25g, back reflectivity: 42%;

[0036] Step S4, preparation of silicon dioxide layer: a layer of silicon dioxide film is deposited on the front and back sides by thermal oxidation method, where oxygen flow rate: 1000-2000sccm, pressure: 100-300pa, thermal oxidation temperature: 600-700℃, time : 10-30min; thickness of the prepared silicon dioxide layer: 2-5nm;

[0037] Step S5, preparation of the aluminum oxide layer on the back surface: prepare an aluminum oxide film using an ALD method, where the temperature: 200°C, trimethyl aluminum (TMA): 3.5 mg/L; pure water (DI Water): 50 mg/L; prepared The thickness of the aluminum oxide film is 4.5nm, and the refractive index: 1.65;

[0038] Step S6, preparation of silicon carbonitride on the back surface: use PECVD method to deposit silicon carbonitride film on the back surface, where SiH 4 : CH 4 : NH 3 =1:1:12, temperature: 450-550°C, power: 9KW; prepared SixCyNz film thickness: 20nm, refractive index: 2.15;

[0039] Step S7, preparation of backside silicon oxynitride stack: using PECVD method to deposit silicon oxynitride film on the backside of silicon wafer, where SiH 4 : N 2 O: NH 3 =1:1:10, temperature 450-550℃, power: 8KW, thickness of silicon oxynitride laminated film: 110nm, refractive index: 2.10;

[0040] Step S8, preparation of front side silicon oxynitride stack: use PECVD method to deposit a layer of SixOyNz film on the front side of silicon wafer, where N 2 O flow rate: 200-800sccm, SiH 4 Flow rate: 1000-2000sccm, NH 3 Flow rate: 3500-5000sccm, deposition temperature: 450-550°C, deposition time: 500-700s; thickness of the prepared SixOyNz film: 80m, refractive index: 2.09;

[0041] Step S9, back laser grooving: using the principle of laser fusion to perform partial grooving of the back laminated passivation film, the back laser pattern parameters are: spot diameter: 20-50μm, laser line spacing: 500-900μm;

[0042] Step 10: Preparation of front and back electrodes: the front and back electrodes are prepared by a screen printing method, and the current is collected, and then sintered to prepare a P-type single crystal PERC battery.

Example Embodiment

[0043] Example 2

[0044] Step S1, surface texture, also called alkali texturing, that is, the silicon wafer substrate is corroded by an alkali solution, and the surface of the silicon wafer substrate is corroded to form a pyramidal surface morphology, wherein the reaction alkali solution: 1.2wt% NaOH, Reaction time: 400s, temperature: 80℃, reflectivity after treatment: 11%;

[0045] Step S2, high-temperature phosphorus diffusion, in which nitrogen flow rate: 700 sccm, oxygen flow rate: 800 sccm, reaction time: 88 min, temperature: 800°C, diffusion resistance: 120 ohms; and the laser doping method forms a heavily doped area in the front electrode area, The square resistance is: 95 ohms;

[0046] Step S3, peripheral etching and back polishing, using 49% HF acid solution to etch the back and edges of the silicon wafer diffused in step 2, and then using 45% KOH and polishing additives to polish the back of the silicon wafer Treatment, weight loss: 0.25g, back reflectivity: 42%;

[0047] Step S4, preparation of silicon dioxide layer: a layer of silicon dioxide film is deposited on the front and back sides by thermal oxidation method, where oxygen flow rate: 1000-2000sccm, pressure: 100-300pa, thermal oxidation temperature: 600-700℃, time :10-30min;

[0048] Step S5, preparation of aluminum oxide layer on the back surface: prepare aluminum oxide film using ALD method, temperature: 200°C, TMA: 3.5 mg/L; pure water: 50 mg/L; thickness of prepared aluminum oxide film: 6 nm, refractive index: 1.65 ;

[0049] Step S6, preparation of silicon carbonitride on the back surface: deposit a silicon carbonitride film on the back surface of the silicon wafer using the PECVD method, where SiH 4 : CH 4 : NH 3 =1:1:14, temperature: 450-550°C, power: 9KW; prepared SixCyNz film thickness: 20nm, refractive index: 2.15;

[0050] Step S7, preparation of backside silicon oxynitride stack: using PECVD method to deposit silicon oxynitride film on the backside of silicon wafer, where SiH 4 : N 2 O: NH 3 =1:1:12, temperature 450-550℃, power: 8KW; prepared silicon oxynitride film thickness: 110nm, refractive index: 2.10;

[0051] Step S8, preparation of the silicon oxynitride layer on the front side: a layer of SixOyNz film is deposited on the front side of the silicon wafer using the PECVD method, where N 2 O flow rate: 200-800sccm, SiH 4 Flow rate: 1000-2000sccm, NH 3 Flow rate: 3500-5000sccm, deposition temperature: 450-550°C, deposition time: 500-700s; thickness of the prepared SixOyNz film: 80m, refractive index: 2.08;

[0052] Step S9, back laser grooving: using the principle of laser fusion to perform partial grooving of the back laminated passivation film, the back laser pattern parameters are: spot diameter: 20-50μm, laser line spacing: 500-900μm;

[0053] Step S10, preparation of the front and back electrodes: the front and back electrodes are prepared by a screen printing method, and the current is collected, and then sintered to prepare a P-type single crystal PERC battery.

[0054] Control group:

[0055] Except for the following steps, the other manufacturing process steps are the same as in the embodiment of the present invention:

[0056] Preparation of aluminum oxide/silicon nitride laminate film on the back side: use PECVD method to deposit aluminum oxide film and silicon nitride film on the back of silicon wafer, wherein the thickness of the prepared aluminum oxide film is 17-25nm; the process conditions for depositing silicon nitride film For: Deposition temperature: 450℃, SiH 4 Flow rate: 800sccm, NH 3 Flow rate: 6700sccm, thickness of deposited back silicon nitride film: 110-120nm, refractive index: 2.05-2.10;

[0057] Preparation of silicon nitride layer on the front side: use PECVD method to deposit silicon nitride film on the front side of the silicon wafer, deposition temperature: 450℃, SiH 4 Flow rate: 1300sccm; NH 3 Flow rate: 6400sccm, deposition time: 600s, thickness of the deposited silicon nitride film on the front surface is 85nm, refractive index: 2.07-2.10.

PUM

Property	Measurement	Unit
Thickness	3.0 ~ 10.0	nm
Thickness	20.0	nm
Thickness	110.0	nm

Description & Claims & Application Information

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Classification and recommendation of technical efficacy words

reduce usage

P-type single crystal PERC battery capable of improving LeTID phenomenon and manufacturing method thereof

AI-Extracted Technical Summary

Problems solved by technology

Abstract

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Examples

Example Embodiment

Example Embodiment

PUM

Description & Claims & Application Information

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