P-type single crystal PERC battery capable of improving LeTID phenomenon and manufacturing method thereof

A production method and single crystal technology, applied in sustainable manufacturing/processing, circuits, photovoltaic power generation, etc., can solve the problems that do not conform to the development trend of cost reduction and efficiency improvement in the photovoltaic industry, the decline in the efficiency of batteries and modules, and excess hydrogen atoms in batteries, etc. Problems, to achieve good field passivation effect, reduce the amount of use, reduce the effect of excess hydrogen atom content

Active Publication Date: 2020-04-17
JETION SOLAR HLDG
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  • Application Information

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Problems solved by technology

The more excess hydrogen, the worse the attenuation, resulting in lower cell and module efficiencies
In order to improve this problem, there are currently two research directions: one is to use low-defect high-quality silicon wafers, but this will lead to a substantial increase in manufacturing costs, which is not in line with the development trend of cost reduction and efficiency improvement

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  • P-type single crystal PERC battery capable of improving LeTID phenomenon and manufacturing method thereof
  • P-type single crystal PERC battery capable of improving LeTID phenomenon and manufacturing method thereof

Examples

Experimental program
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[0032] Example 1

[0033] Step S1, surface texture, also called alkali texturing, that is, the silicon wafer substrate 4 is etched with an alkaline solution, and the surface of the silicon wafer substrate 4 is etched to form a pyramidal surface morphology, wherein the reaction alkali solution: 1.2wt% NaOH, reaction time: 400s, temperature: 80°C, reflectivity after treatment: 11%;

[0034] Step S2, high-temperature phosphorus diffusion, the diffusion source phosphorus oxychloride is brought into the high-temperature diffusion furnace with nitrogen through a constant temperature liquid source bottle, and at the same time sufficient oxygen is introduced, after the reaction, phosphorus atoms diffuse into the P-type silicon wafer , Forming an N-type impurity distribution to obtain a PN junction, where nitrogen flow rate: 700 sccm, oxygen flow rate: 800 sccm, reaction time: 88 min, temperature: 800 ℃, diffusion resistance: 120 ohm; laser doping method is formed in the front electrode are...

Example Embodiment

[0043] Example 2

[0044] Step S1, surface texture, also called alkali texturing, that is, the silicon wafer substrate is corroded by an alkali solution, and the surface of the silicon wafer substrate is corroded to form a pyramidal surface morphology, wherein the reaction alkali solution: 1.2wt% NaOH, Reaction time: 400s, temperature: 80℃, reflectivity after treatment: 11%;

[0045] Step S2, high-temperature phosphorus diffusion, in which nitrogen flow rate: 700 sccm, oxygen flow rate: 800 sccm, reaction time: 88 min, temperature: 800°C, diffusion resistance: 120 ohms; and the laser doping method forms a heavily doped area in the front electrode area, The square resistance is: 95 ohms;

[0046] Step S3, peripheral etching and back polishing, using 49% HF acid solution to etch the back and edges of the silicon wafer diffused in step 2, and then using 45% KOH and polishing additives to polish the back of the silicon wafer Treatment, weight loss: 0.25g, back reflectivity: 42%;

[0047...

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Abstract

The invention provides a manufacturing method of a P-type single crystal PERC battery capable of improving a LeTID phenomenon. The manufacturing method comprises the following steps of S1, surface texturing, S2, high-temperature phosphorus diffusion, S3, etching the periphery and polishing the back surface, S4, preparing a front silicon dioxide layer and a back silicon dioxide layer, S5, preparinga back aluminum oxide layer, S6, preparing a back silicon carbonitride layer, S7, preparing a back silicon oxynitride laminated layer, S8, preparing a front silicon oxynitride layer, S9, conducting laser grooving on the back face, and S10, preparing a front electrode and a back electrode. The hydrogen source is reduced by changing the structure of the battery film layer, the manufacturing raw materials and the corresponding process optimization method, redundant hydrogen atoms in the solar battery piece are reduced, and the technical effect of improving the LeTID phenomenon of the solar battery is achieved.

Description

technical field [0001] The invention relates to a P-type single crystal PERC battery and a manufacturing method thereof, in particular to a P-type single crystal PERC battery capable of improving the LeTID phenomenon and a manufacturing method thereof, belonging to the technical field of solar cell production and manufacturing. Background technique [0002] In recent years, the mainstream product in the photovoltaic industry is boron-doped P-type monocrystalline PERC (Passivated Emmiter and Rear Cell, also known as passivated emitter and rear cell) solar cells, but this mainstream product has different degrees of light-induced degradation (LID, Light Induced Degradation) and light and heat decay (LeTID, Light and elevatedTemperature Induced Degradation) phenomenon. Photoinduced attenuation and photothermal attenuation refer to the obvious efficiency attenuation phenomenon of PERC cells under certain high temperature and light conditions, which seriously affects the power gen...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0216H01L31/054
CPCH01L31/02167H01L31/18H01L31/0543Y02E10/52Y02P70/50
Inventor 康海涛郭万武吴中亚
Owner JETION SOLAR HLDG
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