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PERC double-sided solar cell and manufacturing method thereof

A technology of solar cells and manufacturing methods, which is applied in the field of solar cells, can solve the problems of increasing the manufacturing cost of silicon wafers, and cannot fundamentally eliminate black spots and black spots, so as to increase the reflectivity, avoid the reduction of parallel resistance, and improve the conversion rate. efficiency effect

Pending Publication Date: 2021-02-19
中建材浚鑫(桐城)科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the deficiencies of the prior art, the present invention discloses a PERC double-sided solar cell and its manufacturing method, so as to solve the problem that the generation of black spots and black spots cannot be fundamentally eliminated in the prior art, which increases the manufacturing cost of silicon wafers. And other issues

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  • PERC double-sided solar cell and manufacturing method thereof

Examples

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no. 1 example

[0080] Step S1: Surface Texturing. Texture cleaning machine for surface texturing of P-type silicon wafers.

[0081] In step S1, the P-type silicon wafer is immersed in a sodium hydroxide solution with a concentration of 1.1 wt % and a temperature of 70° C., and the surface of the P-type silicon wafer is corroded into several cone-shaped surface features. P-type silicon chip response time: 220s, P-type silicon chip reflectivity: 11%.

[0082] Step S2: Diffusion. The diffusion process consists of two diffusions.

[0083] High-temperature phosphorus diffusion: Nitrogen drives phosphorus oxychloride to be charged into the diffusion furnace, and oxygen is charged into the diffusion furnace.

[0084] Laser selective diffusion: Selective diffusion and irradiation of the front electrode area of ​​the silicon wafer by a high-energy laser. Selective diffusion rear resistance: 70Ω.

[0085] In the high-temperature phosphorus diffusion in step S2, in the high-temperature diffusion s...

no. 2 example

[0102] Step S1: Surface Texturing. Texture cleaning machine for surface texturing of P-type silicon wafers.

[0103] In step S1, the P-type silicon wafer is immersed in a sodium hydroxide solution with a concentration of 1.4 wt % and a temperature of 85° C., and the surface of the P-type silicon wafer is corroded into several cone-shaped surface features. P-type silicon chip response time: 380s, P-type silicon chip reflectivity: 12%.

[0104] Step S2: Diffusion. The diffusion process consists of two diffusions.

[0105]High-temperature phosphorus diffusion: Nitrogen drives phosphorus oxychloride to be charged into the diffusion furnace, and oxygen is charged into the diffusion furnace.

[0106] Laser selective diffusion: Selective diffusion and irradiation of the front electrode area of ​​the silicon wafer by a high-energy laser. Selective diffusion rear resistance: 80Ω.

[0107] In the high-temperature phosphorus diffusion in step S2, in the high-temperature diffusion st...

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Abstract

The invention relates to a PERC double-sided solar cell and a manufacturing method thereof. The solar cell is characterized by comprising a front electrode, a back electrode and a P-type silicon wafersubstrate, an N-type doping layer, a front silicon dioxide layer and a front silicon nitride layer are sequentially arranged on one surface of the P-type silicon wafer substrate from inside to outside, and a back aluminum oxide layer, a back silicon nitride layer and a back silicon dioxide layer are sequentially arranged on the other surface of the P-type silicon wafer substrate from inside to outside; the front electrode sequentially penetrates through the front silicon nitride layer and the front silicon dioxide layer; the front electrode is connected with the N-type doped layer; the back electrode sequentially penetrates through the back silicon dioxide layer, the back silicon nitride layer and the back aluminum oxide layer; and the back electrode is connected with the P-type silicon wafer substrate. The problems that black spots and black spots cannot be fundamentally eliminated, and the manufacturing cost of a silicon wafer is increased in the prior art are solved.

Description

technical field [0001] The invention relates to a solar cell, in particular to a PERC double-sided solar cell and a manufacturing method thereof. Background technique [0002] Generally, the current mainstream product in the photovoltaic industry is P-type monocrystalline PERC (Passivated Emmiter and Rear Cell, also known as passivated emitter and rear cell) solar cells. After the rapid development of PERC cells in recent years, the global PERC cell production capacity has reached more than 100 GW, the continuous growth trend of its photoelectric conversion efficiency has encountered a bottleneck. It is necessary to find new technologies to help improve the efficiency of PERC batteries and maintain the advantages of high cost performance of PERC batteries. In addition, current PERC solar cells are manufactured using a variety of complex processes. During the production process, some pollution damage was caused to the PERC cells, which affected the yield of PERC cells, incre...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/0224H01L31/0236H01L31/054H01L31/068H01L31/18H01L21/228H01L21/306H01L21/324
CPCH01L31/0684H01L31/1804H01L31/02363H01L21/228H01L21/30604H01L31/02167H01L31/1868H01L21/324H01L31/02168H01L31/0543H01L31/022441H01L31/022433Y02E10/547Y02E10/52Y02P70/50
Inventor 康海涛胡燕吴中亚赵建飞郭万武张燕飞
Owner 中建材浚鑫(桐城)科技有限公司
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