PERC double-sided solar cell and manufacturing method thereof
A technology of solar cells and manufacturing methods, which is applied in the field of solar cells, can solve the problems of increasing the manufacturing cost of silicon wafers, and cannot fundamentally eliminate black spots and black spots, so as to increase the reflectivity, avoid the reduction of parallel resistance, and improve the conversion rate. efficiency effect
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[0079]The first embodiment:
[0080]Step S1: Surface texture. The texturing cleaning machine performs surface texture on the P-type silicon wafer.
[0081]In step S1, the P-type silicon wafer is immersed in a sodium hydroxide solution with a concentration of 1.1 wt% and a temperature of 70° C., and the surface of the P-type silicon wafer is corroded into a number of cone-shaped surface morphologies. P-type silicon wafer reaction time: 220s, P-type silicon wafer reflectivity: 11%.
[0082]Step S2: Diffusion. The diffusion process includes two diffusions.
[0083]High-temperature phosphorus diffusion: Nitrogen drives phosphorus oxychloride to fill the diffusion furnace, and oxygen fills the diffusion furnace.
[0084]Laser selective diffusion: A high-energy laser selectively diffuses and irradiates the front electrode area of the silicon wafer. Selective diffusion rear resistance: 70Ω.
[0085]In the high-temperature phosphorus diffusion in step S2, in the high-temperature diffusion step, nitrogen dr...
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[0101]The second embodiment:
[0102]Step S1: Surface texture. The texturing cleaning machine performs surface texture on the P-type silicon wafer.
[0103]In step S1, the P-type silicon wafer is immersed in a sodium hydroxide solution with a concentration of 1.4 wt% and a temperature of 85° C., and the surface of the P-type silicon wafer is corroded into a number of cone-shaped surface morphologies. P-type silicon wafer reaction time: 380s, P-type silicon wafer reflectivity: 12%.
[0104]Step S2: Diffusion. The diffusion process includes two diffusions.
[0105]High-temperature phosphorus diffusion: Nitrogen drives phosphorus oxychloride to fill the diffusion furnace, and oxygen fills the diffusion furnace.
[0106]Laser selective diffusion: A high-energy laser selectively diffuses and irradiates the front electrode area of the silicon wafer. Selective diffusion rear resistance: 80Ω.
[0107]In the high-temperature phosphorus diffusion in step S2, in the high-temperature diffusion step, nitrogen d...
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