W type antimony-based semiconductor laser with gradually varied Ga In proportion

Abstract

The invention relates to a W type antimony-based semiconductor laser with gradually varied Ga In proportion, which belongs to the technical field of semiconductor lasers. The existing InAs/GaInSb W type antimony-based semiconductor laser is difficult to realize luminescence at room temperature, and is less in output power of luminescence at low temperature (73K). The W type antimony-based semiconductor laser with gradually varied Ga In proportion sequentially comprises a GaSb substrate, a GaSb buffer layer, a P type GaSb contact layer, a P type quantum well, an intrinsic quantum well, an N type quantum well and an N type InAs contact layer from bottom to top, wherein the P type quantum well, the intrinsic quantum well and the N type quantum well respectively have a multi-period structure; the structure of each single-period quantum well in each multi-period structure is a sandwich structure that a GaInSb hole quantum well is clamped by double InAs electronic quantum wells; the outer layer is a pair of AlSb alloy limiting layers. The W type antimony-based semiconductor laser with gradually varied Ga In proportion is characterized in that the GaInSb hole quantum well is formed by 3 to 9 layers of Ga1-xInxSb layers, wherein x is equal to 0.05-0.35; the value of x of the Ga1-xInxSb layer in the middle is maximal; the Ga1-xInxSb layers on two sides are distributed in 1 to 4 levels from the middle to two sides; the values of x of two Ga1-xInxSb layers at the same level are the same, and the values of x of the Ga1-xInxSb layers from the middle to two sides are gradually reduced.

Description

technical field [0001] The invention relates to a W-type antimony-based semiconductor laser with a gradually changing GaIn ratio. During the growth process of the GaInSb layer, the GaIn ratio is gradually changed. Compared with the existing technology, the thickness of the GaInSb layer can be increased, thereby increasing the W-type antimony The output power of a base semiconductor laser belongs to the technical field of semiconductor lasers. Background technique [0002] Atmospheric monitoring and infrared imaging use the 2-5 μm band atmospheric window including 2-2.5 μm near-infrared and 3-5 μm mid-infrared. Therefore, this band is directly related to sensing technology, remote sensing, photoelectric countermeasures and other fields. The 2-5 μm band also contains many important molecular characteristic lines, and various molecular characteristic lines have their own characteristic absorption peaks. The above-mentioned molecules and their characteristic absorption peaks are...

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Problems solved by technology

[0004] However, the existing InAs / GaInSb W-type antimony-based semiconductor lasers are difficult to achieve room temperature (300K) light emission, and the output power of low temperature (73K) light emission is also very small, such as 140 mW

The reason is that since the atomic number ratio of Ga and In is fixed, such as Ga:In=0.75:0.25, and the ratio of Ga is too small and the ratio of In is too large, there is a large lattice distortion between the InAs / GaInSb layers. There are two unfavorable consequences. One is to generate a large stress, which leads to a very thin critical fracture thickness of the GaInSb layer, such as less than 2nm. The thickness of the GaInSb layer should be less than 2nm, such as 1.8nm. Such a thin GaInSb hole quantum The well 9 provides a serious shortage of hole carriers for the laser, so that few photons are generated during recombination; second, there are defects at the InAs / GaInSb interface, thereby forming a carrier recombination center, where non-radiative transitions occur , so that the originally limited carriers will be consumed by a large number of inaction

The combination of the two consequences shows that the laser output power is low, and it is almost impossible to form a stable laser output at room temperature

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