GaN-based LED (Light-emitting Diode) epitaxy structure and preparation method thereof

Abstract

The invention discloses a GaN-based LED epitaxy structure and a preparation method thereof. The GaN-based LED epitaxy structure sequentially comprises a substrate, a GaN nucleating layer, a superlattice buffer layer, a non-doped GaN layer, an N type GaN layer, a multi-quantum-well luminescent layer, and a P type GaN layer, wherein the superlattice buffer layer adopts a superlattice structure which is prepared by alternately stacking a plurality of pairs of AlGaN buffer layers, AlN buffer layers and GaN buffer layers. The GaN-based LED epitaxy structure disclosed by the invention can relieve the lattice mismatch problem due to mismatch between the sapphire substrate and the GaN lattice, greatly reduces the warping of the epitaxial wafer during the whole high-temperature growth process, promotes the wavelength centrality and the yield of the epitaxial wafer, meanwhile effectively increases the GaN lattice quality, reduces the lattice dislocation density, and enables the optical-electrical characteristics of the device to be more stable.

Description

technical field [0001] The invention relates to the technical field of semiconductor light emitting devices, in particular to a GaN-based LED epitaxial structure and a preparation method thereof. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic component capable of emitting light. This electronic component appeared as early as 1962. In the early days, it could only emit red light with low luminosity. Later, other monochromatic light versions were developed. Today, the light that can be emitted has covered visible light, infrared rays and ultraviolet rays, and the luminosity has also increased to a considerable extent. of luminosity. And the use is also used as indicator lights, display panels, etc. from the beginning; with the continuous advancement of technology, light-emitting diodes have been widely used in displays, TV lighting decoration and lighting. [0003] At present, commercial large-scale LED epitaxia...

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Problems solved by technology

Larger-sized substrates and epitaxial wafers, due to lattice mismatch and thermal expansion coefficient mismatch, will cause greater warpage and lattice stress, and cannot form better secondary wafers that were realized on the original 2-inch small-sized epitaxial wafers. Dimensional layered growth structure, resulting in low crystallinity of the GaN bottom layer and large surface roughness. After the structure is fully grown, the electrical yield is low, and the wavelength yield is low. Ultimately, it is impossible to realize larger-sized epitaxial wafers (such as 4 inches and Above) large-scale mass production

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