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A gallium nitride-based light-emitting diode epitaxial wafer and its preparation method

A light-emitting diode, gallium nitride-based technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems affecting the crystal quality of epitaxial wafers, block dislocations, reduce stress and defects, and alleviate lattice mismatch. Effect

Active Publication Date: 2020-11-27
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology

[0007] Embodiments of the present invention provide a gallium nitride-based light-emitting diode epitaxial wafer and a preparation method thereof, which can solve the problem in the prior art that the lattice mismatch between the substrate and the N-type semiconductor layer affects the crystal quality of the epitaxial wafer

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  • A gallium nitride-based light-emitting diode epitaxial wafer and its preparation method
  • A gallium nitride-based light-emitting diode epitaxial wafer and its preparation method
  • A gallium nitride-based light-emitting diode epitaxial wafer and its preparation method

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Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0028] An embodiment of the present invention provides a GaN-based light-emitting diode epitaxial wafer. figure 1 A schematic structural diagram of a gallium nitride-based light-emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the GaN-based light-emitting diode epitaxial wafer includes a substrate 10, a buffer layer 20, a quality improvement layer 30, an N-type semiconductor layer 40, an active layer 50, and a P-type semiconductor layer 60, the buffer layer 20, the quality improvement layer 30, The N-type semiconductor layer 40 , the active layer 50 and the P-type semiconductor layer 60 are sequentially stacked on the substrate 10 .

[0029] figure 2 Schematic diagram of the structur...

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Abstract

The invention discloses a gallium nitride-based light emitting diode epitaxial wafer and a preparation method thereof and belongs to the technical field of a semiconductor. The gallium nitride-based light emitting diode epitaxial wafer includes a substrate, and a buffer layer, a quality improvement layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are sequentially stacked on the substrate, wherein the material of the substrate is sapphire, the material of the N-type semiconductor layer, the active layer and the P-type semiconductor layer is a galliumnitride-based material, the quality improvement layer includes a first sub layer and a second sub layer which are sequentially stacked, the material of the first sub layer is non-doped aluminum gallium nitride, the material of the second sub-layer is non-doped aluminum indium nitride, and the aluminum component content of the first sub layer and the second sub layer gradually decreases along the stacking direction of gallium nitride-based light emitting diode epitaxial wafers. The method is advantaged in that crystal quality of the epitaxial wafer can be effectively improved, composite light emitting of carriers in an active layer is facilitated, and light emitting efficiency of LEDs is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Gallium nitride (GaN) has good thermal conductivity, and has excellent characteristics such as high temperature resistance, acid and alkali resistance, and high hardness, so that gallium nitride (GaN)-based LEDs have received more and more attention and research. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing gallium nitride-based LED epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, and the buffer layer, N-type semiconductor layer, active layer, and P-type semiconductor layer are...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/12H01L33/00
CPCH01L33/007H01L33/025H01L33/12
Inventor 郭炳磊王群曹阳葛永晖吕蒙普李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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