A gallium nitride-based light-emitting diode epitaxial wafer and its preparation method

Abstract

The invention discloses a gallium nitride-based light emitting diode epitaxial wafer and a preparation method thereof and belongs to the technical field of a semiconductor. The gallium nitride-based light emitting diode epitaxial wafer includes a substrate, and a buffer layer, a quality improvement layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are sequentially stacked on the substrate, wherein the material of the substrate is sapphire, the material of the N-type semiconductor layer, the active layer and the P-type semiconductor layer is a galliumnitride-based material, the quality improvement layer includes a first sub layer and a second sub layer which are sequentially stacked, the material of the first sub layer is non-doped aluminum gallium nitride, the material of the second sub-layer is non-doped aluminum indium nitride, and the aluminum component content of the first sub layer and the second sub layer gradually decreases along the stacking direction of gallium nitride-based light emitting diode epitaxial wafers. The method is advantaged in that crystal quality of the epitaxial wafer can be effectively improved, composite light emitting of carriers in an active layer is facilitated, and light emitting efficiency of LEDs is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Gallium nitride (GaN) has good thermal conductivity, and has excellent characteristics such as high temperature resistance, acid and alkali resistance, and high hardness, so that gallium nitride (GaN)-based LEDs have received more and more attention and research. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing gallium nitride-based LED epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, and the buffer layer, N-type semiconductor layer, active layer, and P-type semiconductor layer are...

AI Technical Summary

Problems solved by technology

[0007] Embodiments of the present invention provide a gallium nitride-based light-emitting diode epitaxial wafer and a preparation method thereof, which can solve the problem in the prior art that the lattice mismatch between the substrate and the N-type semiconductor layer affects the crystal quality of the epitaxial wafer

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