A gallium nitride-based light-emitting diode and its preparation method
A light-emitting diode, gallium nitride-based technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as poor LED crystal quality, improve crystal quality, improve forward and side light output capabilities, and achieve diversification Effect
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Embodiment 1
[0031] An embodiment of the present invention provides a gallium nitride-based light emitting diode, see figure 1 , the gallium nitride-based light-emitting diode includes a sapphire substrate 1, and a buffer layer 2, an undoped GaN layer 3, a stress improvement layer 4, an N-type GaN layer 5, and an active layer 6 stacked sequentially on the sapphire substrate 1 , P-type electron blocking layer 7, and P-type GaN layer 8.
[0032] In this embodiment, the stress improvement layer 4 is composed of Al, Ga, and N in a volume ratio of 2:1 to 1:1. 2 and H 2 Formed under the atmosphere of the stress-improving layer 4, the surface is uneven. The sapphire substrate 1 adopts (0001) crystal orientation sapphire. The buffer layer 2 is a GaN layer or an AlGaN layer, and the active layer 6 includes alternately stacked InGaN layers and GaN layers. The P-type electron blocking layer 7 includes an AlGaN layer and an InGaN layer, or the P-type electron blocking layer 7 includes AlGaN.
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Embodiment 2
[0050]The embodiment of the present invention provides a method for preparing a gallium nitride-based light-emitting diode, which is suitable for preparing the gallium nitride-based light-emitting diode provided in Example 1, see figure 2 , the preparation method comprises:
[0051] Step 200: Control the temperature to 1000-1200° C., anneal the sapphire substrate in a hydrogen atmosphere for 8 minutes, and perform nitriding treatment.
[0052] Understandably, step 200 can clean the surface of the sapphire substrate.
[0053] In this embodiment, the sapphire substrate 1 adopts (0001) crystal orientation sapphire.
[0054] Step 201: Control the temperature to 400-600° C. and the pressure to 400-600 Torr to grow a buffer layer on the sapphire substrate.
[0055] In this embodiment, the buffer layer is a GaN layer.
[0056] Optionally, the thickness of the buffer layer may be 15-35 nm.
[0057] Optionally, after step 201, the preparation method may further include:
[0058] ...
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