Light-emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention discloses a light emitting diode epitaxial wafer and a preparation method thereof, and belongs to the field of light emitting diode manufacturing. A buffer layer comprises a first sub-layer and a second sub-layer, and the first sub-layer plays a role in transition. The second sub-layer stacked on the first sub-layer comprises second GaN layers and BGaN layers which are alternately stacked. On one hand, lattice mismatch is relieved, a good foundation is provided for growth of a subsequent epitaxial structure, and on the other hand, the BGaN layers can be inserted into or fill blank positions caused by dislocation due to the fact that the volume of B atoms is small, and defects existing in the buffer layer are reduced. Moreover, B atoms can play a certain role in positioning, so that dislocation is prevented from continuing moving into an n-type GaN layer and a multi-quantum well layer, and the crystal quality of the finally obtained light-emitting diode epitaxial wafer iseffectively improved.

Description

technical field [0001] The invention relates to the field of light-emitting diode production, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] A light emitting diode is a semiconductor electronic component that emits light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlight, etc. Improving the luminous efficiency of chips is the goal that LEDs are constantly pursuing. [0003] The light-emitting diode epitaxial wafer is the basic structure used to prepare light-emitting diodes. The light-emitting diode epitaxial wafer usually includes a substrate and an AlN layer, a GaN buffer layer, an n-type GaN layer, a multi-quantum well layer and a p-type GaN layer grown sequentially on the substrate. layer. The GaN buffer layer can allevia...

AI Technical Summary

Problems solved by technology

[0004] However, when the GaN buffer layer itself grows on the AlN layer, it will also accumulate some dislocation defects, and these dislocation defects will extend to structures such as the n-type GaN layer, resulting in the final n-type GaN layer, multiple quantum well layer and p The crystal quality of the GaN layer has limited improvement

Images